Dr. Arame Thiam Profile

Dr. Arame Thiam

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Publications (11)

Proceedings Article | 10 April 2024 Presentation + Paper

Pushing the boundaries of random logic metal patterning with low-n EUV single exposure

Syamashree Roy, Arame Thiam, Kaushik Sah, Yannick Feurprier, Nobuyuki Fukui, Kathleen Nafus, Kenichi Miyaguchi, Dieter Van den Heuvel, Balakumar Baskaran, Joost Bekaert, Andrew Cross, Mircea Dusa, Victor Blanco Carballo

Proceedings Volume 12953, 129530X (2024) https://doi.org/10.1117/12.3010868

KEYWORDS: Optical lithography, Semiconducting wafers, Logic, Scanning electron microscopy, Lithography, Design, Extreme ultraviolet

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Proceedings Article | 9 April 2024 Presentation + Paper

Advanced processes in metal-oxide resists for high-NA EUV lithography

Cong Que Dinh, Seiji Nagahara, Kayoko Cho, Hikari Tomori, Yuhei Kuwahara, Tomoya Onitsuka, Soichiro Okada, Shinichiro Kawakami, Arisa Hara, Seiji Fujimoto, Makoto Muramatsu, Reiko Tsuzuki, Xiang Liu, Arame Thiam, Yannick Feurprier, Kathleen Nafus, Michael Carcasi, Lior Huli, Kanzo Kato, Alexandra Krawicz, Michael Kocsis, Peter De Schepper, Lauren McQuade, Kazuki Kasahara, Jara Garcia Santaclara, Rik Hoefnagels, Bruno La Fontaine, Ryan Miyakawa, Chris Anderson, Patrick Naulleau

Proceedings Volume 12957, 1295705 (2024) https://doi.org/10.1117/12.3010207

KEYWORDS: Extreme ultraviolet lithography, Extreme ultraviolet, Inspection, Tin, Lithography, Etching

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One of the key steps in the pattern formation chain of extreme ultraviolet (EUV) lithography is the development process to resolve the resist pattern after EUV exposure. The traditional development process might be insufficient to achieve the requirements of ultra-high-resolution features with low defect levels. The aim of this paper is to establish a process to achieve a good roughness, a low defectivity at a low EUV dose, and capability for extremely-high-resolution for high numerical aperture (NA) and hyper-NA EUV lithography. A new development method named ESPERT™ (Enhanced Sensitivity develoPER Technology™) has been introduced to improve the performance of metal oxide-resists (MOR). ESPERT™ as a chemical super resolution technique effectively apodized the MOR chemical image, improving chemical gradient (higher exposure latitude (EL)) and reducing scums (fewer bridge defects). This new development method can also keep the resist profile vertical to mitigate the break defects. The performances of the conventional development and ESPERT™ were evaluated and compared using 0.33 NA EUV, 0.5 NA EUV, and electron beam (EB) exposures, for all line-space (LS), contact hole (CH), and pillar (PL) patterns. Using 0.33 NA EUV scanners on LS patterns, both bridge and break defects were confirmed to be reduced for all 32-nm-pitch, 28-nm-pitch, 26-nm-pitch LS patterns while reducing the EUV dose to size (DtS). In the electrical yield (1 meter length) test of breaks/bridges of 26-nm pitch structures, ESPERT™ reduced EUV dose while its combo yield was almost 100% over a wide dose range of 20mJ/cm². For CH patterns, in the case of 32-nm-pitch AEI (after etch inspection), EL was increased 7.5% up to 22.5%, while failure free latitude (FFL) was widened from 1-nm to 4-nm. A 16-nm-pitch LS pattern was successfully printed with 0.5 NA tool, while a 16-nm-pitch PL and an 18-nm-pitch CH patterns were also achieved with an EB lithography by ESPERT™. With ESPERT™, there was no pillar collapse observed for 12-nm half-pitch PL by 0.5 NA and 8-nm half-pitch PL by EB. With all the advantages of having a high exposure sensitivity, a low defectivity, and an extremely-high-resolution capability, this advanced development method is expected be a solution for high-NA EUV towards hyper-NA EUV lithography.

Proceedings Article | 22 November 2023 Poster

Holistic litho-etch approach towards high NA EUV challenges

Soichiro Okada, Arnaud Dauendorffer, Yuhei Kuwahara, Satoru Shimura, Philippe Foubert, Danilo De Simone, Cong Que Dinh, Ken Ando, Atsushi Tsuboi, Nobuyuki Fukui, Arame Thiam, Yannick Feurprier, Kathleen Nafus

Proceedings Volume PC12750, PC1275011 (2023) https://doi.org/10.1117/12.2687568

KEYWORDS: Extreme ultraviolet, Etching, Plasma etching, Photoresist materials, Optical lithography, Critical dimension metrology, Plasma, Metal oxides, Lithography, High volume manufacturing

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Proceedings Article | 1 May 2023 Poster + Paper

Recent advances in EUV patterning in preparation towards high-NA EUV

Seiji Nagahara, Arnaud Dauendorffer, Arame Thiam, Xiang Liu, Yuhei Kuwahara, Cong Que Dinh, Soichiro Okada, Shinichiro Kawakami, Hisashi Genjima, Noriaki Nagamine, Makoto Muramatsu, Satoru Shimura, Atsushi Tsuboi, Kathleen Nafus, Yannick Feurprier, Marc Demand, Rajesh Ramaneti, Philippe Foubert, Danilo De Simone, Geert Vendenberghe

Proceedings Volume 12498, 124981G (2023) https://doi.org/10.1117/12.2657432

KEYWORDS: Optical lithography, Extreme ultraviolet, Extreme ultraviolet lithography, Interfaces, Etching, Coating thickness, Lithography, Stochastic processes, Critical dimension metrology

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Proceedings Article | 26 May 2022 Paper

Logic via printability enhancement using restricted via placement and exhaustive SRAF placement on a staggered grid

Pieter Wöltgens, Alberto Colina, David Rio, Maxence Delorme, Tatiana Kovalevich, Arame Thiam, Frieda van Roey, Odysseas Zografos

Proceedings Volume 12051, 120510I (2022) https://doi.org/10.1117/12.2614260

KEYWORDS: SRAF, Logic, Semiconducting wafers, Lithography, Photomasks, Optical proximity correction, Critical dimension metrology, Printing, Extreme ultraviolet lithography, Statistical analysis

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Proceedings Article | 25 May 2022 Presentation + Paper

Tone reversal patterning for advanced technology nodes

F. Schleicher, J. Bekaert, A. Thiam, S. Decoster, R. Blanc, F. Lazzarino, J. Garcia Santaclara, G. Rispens, M. Maslow

Proceedings Volume 12056, 1205605 (2022) https://doi.org/10.1117/12.2610941

KEYWORDS: Etching, Optical lithography, Critical dimension metrology, Inspection, Photomasks, Line edge roughness, Atomic layer deposition, Line width roughness, Extreme ultraviolet

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Proceedings Article | 19 October 2021 Presentation + Paper

Towards high NA patterning readiness: materials, processes and etch transfer for P24 Line Space

A. Thiam, J. G. Santaclara, J-H. Franke, F. Schleicher, R. Blanc, P. Bezard, A. Moussa, P. Wong, E. Hendrickx, M. Maslow

Proceedings Volume 11854, 118540A (2021) https://doi.org/10.1117/12.2601839

KEYWORDS: Etching, Photoresist materials, Semiconducting wafers, Optical lithography, Scanning electron microscopy, Photoresist processing, Lithography, Atomic force microscopy, Photoresist developing, Oxides

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Proceedings Article | 26 February 2021 Presentation

Today’s scorecard for tomorrow’s photoresist: progress and outlook towards High-NA EUV lithography

Jara Santaclara, Gijsbert Rispens, Joost Bekaert, Arame Thiam, Mark Maslow, Rik Hoefnagels, Nadia Zuurbier, Lidia van Lent-Protasova, Fong Choi Yin

Proceedings Volume 11612, 1161204 (2021) https://doi.org/10.1117/12.2586645

KEYWORDS: Photoresist materials, Extreme ultraviolet lithography, Optical lithography, Photoresist developing, Optical imaging, Lithography, Imaging systems, Image resolution

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Proceedings Article | 26 March 2019 Presentation + Paper

Patterning challenges for beyond 3nm logic devices: example of an interconnected magnetic tunnel junction

N. A. Thiam, D. Wan, L. Souriau, K. Babaei Gavan, N. Rassoul, J. Swerts, S. Couet, E. Raymenants, J. Jussot, D. Trivkovic, M. Ercken, C. Wilson, I. Radu

Proceedings Volume 10958, 109580Y (2019) https://doi.org/10.1117/12.2515086

KEYWORDS: Magnetism, Etching, Electron beam lithography, Lithography, Electrodes, Optical lithography, Semiconducting wafers, Overlay metrology, Optical alignment, Double patterning technology

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Proceedings Article | 19 March 2015 Paper

Ready for multi-beam exposure at 5kV on MAPPER tool: lithographic and process integration performances of advanced resists/stack

Isabelle Servin, Ndeye Arame Thiam, Patricia Pimenta-Barros, Marie-Line Pourteau, Armel-Petit Mebiene, Julien Jussot, Jonathan Pradelles, Philippe Essomba, Ludovic Lattard, Pieter Brandt, Marco Wieland

Proceedings Volume 9423, 94231C (2015) https://doi.org/10.1117/12.2085915

KEYWORDS: Line width roughness, Lithography, Etching, Electron beam lithography, System on a chip, Metals, Scanning electron microscopy, Silicon, Resistance, Extreme ultraviolet

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Proceedings Article | 19 March 2015 Paper

"Fast" and "thick" e-beam resists exposed with multi-beam tool at 5 keV for implants and mature nodes: experimental and simulated model study

Aurélien Fay, Ndeye Thiam, Marie-Laure Cordini, Isabelle Servin, Christophe Constancias, Ludovic Lattard, Laurent Pain

Proceedings Volume 9423, 94231Q (2015) https://doi.org/10.1117/12.2085832

KEYWORDS: Lithography, Electron beam lithography, Silicon, Point spread functions, Scanning electron microscopy, Critical dimension metrology, 3D modeling, Information technology, Etching, Monte Carlo methods

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Showing 5 of 11 publications

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