We report on the results of an experiment to determine the effects of radiation damage caused by high-energy protons on an x-ray hybrid CMOS detector. This detector was utilized in a previous proton radiation experiment, which delivered a total dose to a selected region of ∼3 krad (Si). With updated hardware and experimental procedures, we further irradiated the detector with 7-MeV protons, delivering an additional 1.5 krad (Si) (2.78 × 109 protons / cm2 10 MeV equivalent) with increased uniformity to an overlapping region. The effects of this radiation on several important detector characteristics were analyzed after delivering doses of 0.5 and 1.0 krad. After 16 h of annealing at room temperature, detector performance was found to be unchanged in both cases.
Understanding the effects of high energy proton radiation is essential in planning for the next generation of X-ray space telescopes. We report on the results of an experiment in which an X-ray hybrid CMOS detector was incrementally irradiated with 8 MeV protons up to a total absorbed dose of approximately 3 krad(Si) (4.5 x 109 protons/cm2). The effect of the damage caused by the high energy protons is then analyzed in the context of several detector characteristics, including read noise, dark current, and energy resolution.
We report on the initial results of an experiment to determine the effects of proton radiation damage on an X-ray hybrid CMOS detector (HCD). The device was irradiated at the Edwards Accelerator Lab at Ohio University with 8 MeV protons, up to a total absorbed dose of 3 krad(Si) (4.5 x 109 protons/cm2). The effects of this radiation on read noise, dark current, gain, and energy resolution are then analyzed. This exposure is the first of several which will be used for characterizing detector performance at absorbed dose levels that are relevant for imaging devices operating in a deep-space environment.
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