Dr. Carles Cané Profile

Dr. Carles Cané

Research Professor at Ctr Nacional de Microelectrónica

SPIE Involvement:

Author

Proceedings Article | 5 May 2011 Paper

A MEMS-based thermal infrared emitter for an integrated NDIR spectrometer

C. Calaza, M. Salleras, N. Sabaté, J. Santander, C. Cané, L. Fonseca

Proceedings Volume 8066, 806627 (2011) https://doi.org/10.1117/12.887099

KEYWORDS: Silicon, Infrared radiation, Thermography, Temperature metrology, Aluminum, Resistance, Modulation, Infrared detectors, Spectroscopy, Infrared spectroscopy

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Proceedings Article | 19 May 2009 Paper

Fabrication and characterization of yttria-stabilized zirconia membranes for micro solid oxide fuel cells

Íñigo Garbayo, A. Tarancón, J. Santiso, A. Cavallaro, J. Roqueta, G. Garcia, I. Gràcia, C. Cané, N. Sabaté

Proceedings Volume 7362, 73621B (2009) https://doi.org/10.1117/12.821613

KEYWORDS: Silicon, Zirconium dioxide, Solids, Oxides, Annealing, Electrodes, Semiconducting wafers, X-ray diffraction, Pulsed laser deposition, Microelectromechanical systems

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Proceedings Article | 30 December 2008 Paper

Preconcentrator-based sensor µ-system for low-level benzene detection

P. Ivanov, I. Gràcia, F. Blanco, J.-P. Raskin, R. Cumeras, N. Sabaté, X. Vilanova, X. Correig, L. Fonseca, E. Figueras, J. Santander, C. Cané

Proceedings Volume 7268, 72680S (2008) https://doi.org/10.1117/12.807433

KEYWORDS: Sensors, Gas sensors, Silicon, Fabrication, Deep reactive ion etching, Palladium, Semiconducting wafers, Wafer bonding, Optical lithography, Aluminum

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Proceedings Article | 17 May 2007 Paper

Micro and nanotechnologies for the development of an integrated chromatographic system

O. Casals, A. Romano-Rodríguez, X. Illa, C. Zamani, A. Vilà, J. R. Morante, I. Gràcia, P. Ivanov, N. Sabaté, L. Fonseca, J. Santander, E. Figueras, C. Cané

Proceedings Volume 6589, 65891A (2007) https://doi.org/10.1117/12.721924

KEYWORDS: Gas sensors, Sensors, Silicon, Glasses, Deep reactive ion etching, Gases, Semiconducting wafers, System integration, Chromium, Palladium

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Proceedings Article | 15 May 2007 Paper

Fabrication and characterization of a passive silicon-based direct methanol fuel cell

J. Esquivel, N. Sabaté, J. Santander, N. Torres, C. Cané

Proceedings Volume 6589, 658903 (2007) https://doi.org/10.1117/12.721907

KEYWORDS: Silicon, Microfabrication, Deep reactive ion etching, Electrodes, Semiconducting wafers, Capillaries, Hydrogen, Electrons, Optical lithography, Liquids

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Proceedings Article | 1 July 2005 Paper

3D deformation analysis of flow and gas sensors membranes for reliability assessment

Neus Sabate, Juergen Keller, Astrid Gollhardt, Dietmar Vogel, Isabel Gracia, Carles Cane, Joan Ramon Morante, Bernd Michel

Proceedings Volume 5836, (2005) https://doi.org/10.1117/12.608660

KEYWORDS: Sensors, Gas sensors, Reliability, Silicon, Platinum, 3D metrology, Temperature metrology, Digital image correlation, Atomic force microscopy, Scanning probe microscopy

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Proceedings Article | 1 July 2005 Paper

A highly sensitive IR-optical sensor for ethylene-monitoring

S. Hartwig, J. Hildenbrand, M. Moreno, J. Fonollosa, L. Fonseca, J. Santander, R. Rubio, C. Cane, A. Lambrecht, J. Wollenstein

Proceedings Volume 5836, (2005) https://doi.org/10.1117/12.608615

KEYWORDS: Fresnel lenses, Sensors, Optical filters, Absorption, Signal processing, Modulation, Electronics, Filtering (signal processing), Signal detection, Mirrors

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Proceedings Article | 24 April 2003 Paper

Semiconductor gas sensor compatibility with CMOS technologies

Maria Jesus Lopez-Bosque, Jose Antonio Plaza, Joaquin Santander, Isabel Gracia, Carles Cane, Juergen Wollenstein, Emmanuel Moretton, Armin Lambrecht, Kari Schjolberg-Henriksen

Proceedings Volume 5116, (2003) https://doi.org/10.1117/12.499016

KEYWORDS: Semiconducting wafers, Silicon, Gas sensors, Glasses, Etching, Sensors, Platinum, CMOS technology, Electronics, Annealing

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Proceedings Article | 24 April 2003 Paper

Compatibility of gas and flow sensor technology fabrication

Neus Sabate, Isabel Gracia, Carles Cane, Jordi Puigcorbe, Judith Cerda, Joan Ramon Morante, Javier Berganzo

Proceedings Volume 5116, (2003) https://doi.org/10.1117/12.498995

KEYWORDS: Sensors, Gas sensors, Silicon, Platinum, Resistors, Electrodes, Temperature sensors, Sensor technology, Dielectrics, Semiconductors

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Proceedings Article | 19 April 2002 Paper

Low-cost thermal flow sensor for home-appliances applications

N. Sabate, Isabel Gracia, Carles Cane, J. Berganzo, J. Puicorbe, Juan Morante

Proceedings Volume 4755, (2002) https://doi.org/10.1117/12.462855

KEYWORDS: Sensors, Resistors, Spatial light modulators, Packaging, Silicon, Electronics, Calibration, Finite element methods, Wheatstone bridges, Gas sensors

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Proceedings Article | 5 April 2001 Paper

Thermal-induced stress in dielectric membranes suitable for micromechanized gas sensors

J. Puigcorbe, A. Vila, Isabel Gracia, Carles Cane, Juan Morante

Proceedings Volume 4408, (2001) https://doi.org/10.1117/12.425339

KEYWORDS: Gas sensors, Temperature metrology, Dielectrics, Finite element methods, 3D modeling, Sensors, Convection, Electronics engineering, Electrodes, Silicon

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Proceedings Article | 15 August 2000 Paper

Low-power micromachined structures for gas sensors with improved robustness

Isabel Gracia, Andreas Goetz, Jose Plaza, Carles Cane, Patrice Roetsch, Harald Boettner, Klaus Seibert

Proceedings Volume 4176, (2000) https://doi.org/10.1117/12.395637

KEYWORDS: Silicon, Glasses, Etching, Gas sensors, Semiconducting wafers, Resistors, Dielectrics, Platinum, Resistance, Oxides

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Proceedings Article | 30 August 1999 Paper

Doping and structural properties for the phosphorous-doped polysilicon layers used for micromechanical applications

Florin Gaiseanu, Jaume Esteve, Carles Cane, Alejandro Perez-Rodriguez, Juan Morante, Christoph Serre

Proceedings Volume 3874, (1999) https://doi.org/10.1117/12.361246

KEYWORDS: Phosphorus, Diffusion, Doping, Chemical species, Interfaces, Annealing, Silicon, Heat treatments, Oxygen, Oxidation

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Our researches were devoted to the micromechanical elements fabricated by the surface micromachining technology, in order to reduce or to eliminate the internal stress or the stress gradients. We used an analysis based on secondary ion mass spectroscopy and the spreading resistance profiling determinations, correlated with cross-section electron transmission spectroscopy. The stress induced in the polysilicon layers by the technological processes depends on: (i) the conditions of the low pressure chemical vapor deposition process; (ii) the phosphorus doping technique; (iii) the subsequent multi-step annealing processes. In our experiments the LP-CVD conditions were maintained the same, but the condition specified previously as items (ii) was varied by using two different doping techniques: thermal- chemical doping consisting in prediffusion from a POCl₃ source in an open furnace tube; ionic implantation with an energy E equals 65KeV and a dose N equals 4.5 X 10¹⁵ cm^-2. The implantation process was followed by an annealing at 900 degrees C in an oxygen ambient for 30 minutes. The thermal budget was varied after the doping in order to reduce the stress gradient in the polysilicon layers. The results of our analysis allow us to show that: (1) the doping gradients are correlated with the slower phosphorus grains forme by an excess of the oxygen atoms; a concurrent process induced by the silicon self-interstitial injection during the diffusion and oxidation, determines the enhancement of the grain growth and therefore the enhancement of the electrical activation especially near the internal polysilicon interface; (2) the post-doping annealing conditions could be varied in a convenient manner, so that the doping induced stress gradients into the polysilicon layers to be reduced or completely eliminated for suitable micromechanical induced stress gradients into the polysilicon layers to be reduced or completely eliminated for suitable micromechanical applications. The results were used for the process optimization of micromechanical elements. The internal stress was determined by using anew, pull-in voltage method, allowing the comparison of the theory with the experimental data. It was deduced a new form of the equations set useful to extract the mechanical parameters like the internal stress and the Young's module. It was also deduced a simplified approximate formula useful to apply the least square fitting method for the extraction of the mechanical parameters. The results confirms the conclusions of the doping and the structural analysis.