Lead selenide telluride (PbSeTe) polycrystalline films were prepared by magnetron sputtering technique using ternary target material. The lead selenide telluride films were oxidized and iodized. The film samples were tested by the Rigaku Smartlab (grazing X-ray diffractometer) in Japan. The morphology of PbSeTe films after evaporation was observed by SEM (Geminisem 300). The Raman spectra of Pb Se telluride thin films were measured by a confocal microprobe Raman spectrometer (RENISHAW in Via Raman Microscope) and a He-Ne laser with wavelength of 514.5 nm. The infrared photoelectric characteristics of the detector made of PbSeTe thin film before and after sensitization were tested and analyzed. XRD and EDS results show that the prepared PTE films are homogeneous and compact with small grains, and no particles with clear edge profiles can be observed under scanning electron microscopy. The atomic ratio of Te, Pb and Se tends to be 5:7:7. The photoelectric performance detection results show that the sensitized device has excellent photoelectric performance, the photocurrent and response speed are improved significantly, and the fastest rise time and fall time of 980 nm can reach 38.95 microseconds and 620 microseconds, respectively, and the maximum signal-to-noise ratio is nearly 100 times. Therefore, by adjusting sputtering parameters and post-processing, PbSeTe thin film detectors with good photoelectric properties can be obtained.
In this work, a modeling for reactive sputtering has been presented where the non-uniform current density is taken into account. The model in this paper can be used to understand the process of reactive magnetron sputtering. The results are compared with those that assume uniform discharge current density distributed on the target. It can be concluded that the process with the non-uniform discharge density shows a higher flow of gas reactive when occurring the hysteresis behavior. In addition, a study of the radial variation of the target composition in metallic and compound mode is also performed.
A tunable reflecting micro-optoelectromechanical systems (MOEMS) micromirror is designed for measuring the actual temperature and color of an object based on comparison of two wavelength response windows, 3-5 and 8-12 µm. The MOEMS micromirror with switching between two positions by an applied electrostatic voltage provides a response to two wavelength windows by tuning the optical resonant cavity. Three different structural models of the tunable micromirror, which are made up of single Al layer with type I legs, single Al layer with type L legs, and double Al/Si3N4 layers with type I legs, are designed and simulated accurately using ANSYS tools on a 35-µm pixel-pitch array. On the basis of the comparsion, the third model, made up of double Al/Si3N4 layers with type I legs, is chosen. With different distances between the MOEMS micromirror and the bottom electrode, the total capacitance of the tunable micromirror is gained based on electromagnetic analysis and theoretical equation. The pull-in voltage is calculated as 8.21 V by electrostatic-mechanical coupling analysis, and the maximum stress is 368.744 MPa, which is less than the yield strength of Si3N4 thin film. But if the voltage is increased to ~9.73 V, the micromirror will touch the bottom electrode by pull-in behavior.
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