Prof. Chee Hing Tan Profile

Prof. Chee Hing Tan

Professor at Univ of Sheffield

SPIE Involvement:

Author | Editor

Publications (27)

Proceedings Article | 14 March 2023 Presentation + Paper

Low-noise AlGaAsSb avalanche photodiodes for 1550 nm light detection

Xiao Collins, Benjamin Sheridan, David Price, Ye Cao, Tarick Blain, Jo Shien Ng, Chee Hing Tan, Benjamin White

Proceedings Volume 12417, 124170K (2023) https://doi.org/10.1117/12.2651669

KEYWORDS: Avalanche photodetectors, Dark current, Avalanche photodiodes, Signal to noise ratio, Ionization, Indium gallium arsenide, Amplifiers

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Proceedings Article | 4 March 2022 Presentation + Paper

Low-noise AlGaAsSb avalanche photodiodes for 1550nm light detection

Xiao Collins, Benjamin White, Ye Cao, Tarick Osman, Jonathan Taylor-Mew, Jo Shien Ng, Chee Hing Tan

Proceedings Volume 11997, 1199709 (2022) https://doi.org/10.1117/12.2608842

KEYWORDS: Avalanche photodetectors, Amplifiers, Signal to noise ratio, Ionization, Indium gallium arsenide, Avalanche photodiodes, Absorption, Sensors, LIDAR, Interference (communication)

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Proceedings Article | 4 March 2022 Presentation + Paper

Comparison of the temperature dependence of impact ionization coefficients in AlAsSb, InAlAs, and InP

Xiao Jin, Shiyu Xie, Baolai Liang, Xin Yi, Harry Lewis, Leh Lim, Yifan Liu, Beng Koon Ng, Diana Huffaker, Chee Hing Tan, Duu Sheng Ong, John P. David

Proceedings Volume 11997, 119970B (2022) https://doi.org/10.1117/12.2609929

KEYWORDS: Ionization, Temperature metrology, Avalanche photodetectors, Diodes, Silicon, Scattering, Indium gallium arsenide, Phonons, Telecommunications, Semiconductor materials

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Proceedings Article | 13 October 2020 Presentation + Paper

Extremely low-noise avalanche photodiodes based on AlAs0.56Sb0.44

Xin Yi, Shiyu Xie, Baolai Liang, Leh W. Lim, Diana Huffaker, Chee H. Tan, John P. David

Proceedings Volume 11540, 115400M (2020) https://doi.org/10.1117/12.2573766

KEYWORDS: Avalanche photodiodes, Avalanche photodetectors, Ionization, Electrons, Indium gallium arsenide, Diodes, Photodetectors, Defense technologies, Telecommunications, Semiconductor materials

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Proceedings Article | 10 March 2020 Presentation

High-performance AlAs0.56Sb0.44 avalanche photodiodes (Conference Presentation)

Xin Yi, Shiyu Xie, Baolai Liang, Leh Lim, Mukul Debnath, Diana Huffaker, Chee Hing Tan, John P. David

Proceedings Volume 11276, 112760E (2020) https://doi.org/10.1117/12.2544956

KEYWORDS: Avalanche photodiodes, Ionization, Signal processing, Silicon, Indium gallium arsenide, Absorption, Telecommunications, Optical signal processing, Interference (communication), Avalanche photodetectors

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Proceedings Article | 18 September 2018 Presentation + Paper

Al0.85Ga0.15As0.56Sb0.44 avalanche photodiodes with high immunity to temperature fluctuation

S. Abdullah, S. Zhang, J. S. Ng, C. H. Tan

Proceedings Volume 10729, 107290F (2018) https://doi.org/10.1117/12.2326847

KEYWORDS: Avalanche photodetectors, Temperature metrology, Avalanche photodiodes, Diodes, Scattering, Ionization, Phonons, Wide bandgap semiconductors, Photodiodes, Signal processing

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Proceedings Article | 18 September 2018 Paper

Study of avalanche statistics in very low noise AlGaAsSb APDs using a multi-channel analyzer

Lucas L. Pinel, Chee Hing Tan, Jo Shien Ng

Proceedings Volume 10729, 107290O (2018) https://doi.org/10.1117/12.2326846

KEYWORDS: Avalanche photodetectors, Diodes, Ionization, Signal to noise ratio, Statistical analysis, Avalanche photodiodes, Analytical research, Stochastic processes

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Proceedings Article | 1 May 2017 Presentation + Paper

Progress in low light-level InAs detectors- towards Geiger-mode detection

Chee Hing Tan, Jo Shien Ng, Xinxin Zhou, John David, Shiyong Zhang, Andrey Krysa

Proceedings Volume 10212, 102120G (2017) https://doi.org/10.1117/12.2262469

KEYWORDS: Ionization, Photons, Annealing, Temperature metrology, Wet etching, Avalanche photodetectors, Indium arsenide, Sensors, Avalanche photodiodes, Photon counting, Signal detection, Single photon, Photodiodes, Short wave infrared radiation

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Proceedings Article | 21 October 2016 Paper

High sensitivity InAs photodiodes for mid-infrared detection

Jo Shien Ng, Xinxin Zhou, Akeel Auckloo, Benjamin White, Shiyong Zhang, Andrey Krysa, John P. David, Chee Hing Tan

Proceedings Volume 9988, 99880K (2016) https://doi.org/10.1117/12.2243146

KEYWORDS: Indium arsenide, Avalanche photodetectors, Photodiodes, Mid-IR, Avalanche photodiodes, Satellites, Gases, Ionization, Electrons, Quantum efficiency

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Proceedings Article | 12 October 2015 Paper

InAs photodiode for low temperature sensing

X. Zhou, J. S. Ng, C. H. Tan

Proceedings Volume 9639, 96390V (2015) https://doi.org/10.1117/12.2197343

KEYWORDS: Indium arsenide, Photodiodes, Sensors, Black bodies, Temperature metrology, Radiation thermometry, Signal to noise ratio, Diodes, Photodetectors, Optical amplifiers

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Proceedings Article | 31 October 2014 Paper

Demonstration of an InAsBi photodiode operating in the MWIR

Ian Sandall, Faebian Bastiman, Ben White, Robert Richards, John David, Chee Hing Tan

Proceedings Volume 9254, 92540Q (2014) https://doi.org/10.1117/12.2069697

KEYWORDS: Indium arsenide, Bismuth, Photodiodes, Mid-IR, Diodes, Gallium arsenide, Temperature metrology, Indium, Antimony, Surface finishing

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Proceedings Article | 16 October 2013 Paper

Uncooled MWIR InAs/GaSb type-II superlattice grown on a GaAs substrate

M. Hobbs, F. Bastiman, C. Tan, J. P. David, S. Krishna, E. Plis

Proceedings Volume 8899, 889906 (2013) https://doi.org/10.1117/12.2031949

KEYWORDS: Gallium antimonide, Gallium arsenide, Mid-IR, Superlattices, Temperature metrology, Long wavelength infrared, Diffusion, Electrons, Infrared radiation, Absorption

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Proceedings Article | 13 October 2010 Paper

Dry etching and surface passivation techniques for type-II InAs/GaSb superlattice infrared detectors

Siew Li Tan, Yu Ling Goh, Sankha dip Das, Shiyong Zhang, Chee Hing Tan, John P. David, Nutan Gautam, Hasul Kim, Elena Plis, Sanjay Krishna

Proceedings Volume 7838, 783814 (2010) https://doi.org/10.1117/12.864787

KEYWORDS: Etching, Dry etching, Gallium antimonide, Plasma, Indium arsenide, Superlattices, Reactive ion etching, Photoresist materials, Silica, Infrared detectors

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Proceedings Article | 4 May 2010 Paper

Quantum dot infrared photodetectors with highly tunable spectral response for an algorithm-based spectrometer

P. Vines, C. Tan, J. P. David, R. Attaluri, T. Vandervelde, S. Krishna, W.-Y. Jang, M. Hayat

Proceedings Volume 7660, 76602D (2010) https://doi.org/10.1117/12.852650

KEYWORDS: Spectroscopy, Reconstruction algorithms, Optical filters, Long wavelength infrared, Gallium arsenide, Sensors, Bandpass filters, Infrared radiation, Quantum dots, Quantum well infrared photodetectors

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Proceedings Article | 28 April 2010 Paper

Simulations of avalanche breakdown statistics: probability and timing

Jo Shien Ng, Chee Hing Tan, John David

Proceedings Volume 7681, 76810K (2010) https://doi.org/10.1117/12.850145

KEYWORDS: Ionization, Lead, Photon counting, Electrons, Avalanche photodiodes, Picosecond phenomena, Single photon, Quantum efficiency, Silicon, Performance modeling

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Proceedings Article | 18 May 2009 Paper

The development of extremely low noise InAs electron APDs for photon counting applications in SWIR/MWIR wavelengths

Chee Hing Tan, Andrew Marshall, Matthew Steer, John P. David

Proceedings Volume 7355, 73550Z (2009) https://doi.org/10.1117/12.821102

KEYWORDS: Indium arsenide, Avalanche photodetectors, Ionization, Diodes, Photon counting, Temperature metrology, Quantum efficiency, Amplifiers, Avalanche photodiodes, Short wave infrared radiation

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Proceedings Article | 7 May 2009 Paper

The development of extremely low-noise InAs electron APDs for SWIR active or passive imaging

Andrew R. Marshall, Chee Hing Tan, John P. David

Proceedings Volume 7298, 72983A (2009) https://doi.org/10.1117/12.818636

KEYWORDS: Avalanche photodetectors, Indium arsenide, Diodes, Ionization, Mercury cadmium telluride, Short wave infrared radiation, Staring arrays, Temperature metrology, Diffusion, Defense and security

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Proceedings Article | 7 May 2009 Paper

InAlAs avalanche photodiode with type-II absorber for detection beyond 2 μm

Y. Goh, D. S. Ong, S. Zhang, J. S. Ng, C. H. Tan, J. P. David

Proceedings Volume 7298, 729837 (2009) https://doi.org/10.1117/12.819818

KEYWORDS: Avalanche photodetectors, Heterojunctions, Temperature metrology, Absorption, Electrons, Interfaces, Superlattices, Luminescence, PIN photodiodes, Avalanche photodiodes

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Proceedings Article | 30 April 2009 Paper

Avalanche photodiodes beyond 1.65 um

J. S. Ng, C. H. Tan, J. P. David

Proceedings Volume 7320, 73200V (2009) https://doi.org/10.1117/12.821060

KEYWORDS: Indium arsenide, Diodes, Avalanche photodetectors, Indium gallium arsenide, Superlattices, Ionization, Electrons, Absorption, Avalanche photodiodes, Signal detection

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Proceedings Article | 2 October 2008 Paper

Infrared photodiodes based on Type-II strained layer superlattices

Sankha Das, Yu Ling Goh, Chee Hing Tan, John Paul David, Jean-Baptiste Rodriguez, Elena Plis, Yagya Sharma, Ha Sul Kim, Sanjay Krishna

Proceedings Volume 7113, 71130I (2008) https://doi.org/10.1117/12.802203

KEYWORDS: Gallium antimonide, Gallium arsenide, Superlattices, Laser sintering, Photodiodes, Mercury cadmium telluride, Mid-IR, Infrared radiation, Sensors, Quantum efficiency

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Proceedings Article | 2 October 2008 Paper

Low noise InAs avalanche photodiodes for high sensitivity FPAs

Andrew Marshall, Chee Hing Tan, Matthew Steer, John David

Proceedings Volume 7113, 71130H (2008) https://doi.org/10.1117/12.799846

KEYWORDS: Indium arsenide, Ionization, Diodes, Avalanche photodetectors, Staring arrays, Mercury cadmium telluride, Avalanche photodiodes, Defense and security, Doping, Iron

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Proceedings Article | 2 October 2008 Paper

Multiple stack quantum dot infrared photodetectors

P. Vines, C. H. Tan, J. David, R. Attaluri, T. Vandervelde, S. Krishna

Proceedings Volume 7113, 71130J (2008) https://doi.org/10.1117/12.802247

KEYWORDS: Infrared radiation, Infrared detectors, Quantum well infrared photodetectors, Photodetectors, Sensors, Gallium arsenide, Quantum dots, Infrared photography, Mercury cadmium telluride, FT-IR spectroscopy

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Proceedings Article | 16 October 2007 Paper

The effects of monolayer thickness and sheet doping density on dark current and noise current in quantum dot infrared photodetectors

Chee Hing Tan, Souye C. Liew Tat Mun, Peter Vines, John David, Mark Hopkinson, Luke Wilson, Pantelis Aivaliotis

Proceedings Volume 6740, 67400J (2007) https://doi.org/10.1117/12.740701

KEYWORDS: Doping, Quantum dots, Quantum well infrared photodetectors, Infrared photography, Infrared radiation, Photodetectors, Gallium arsenide, Measurement devices, Spectrum analysis, Defense and security

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Proceedings Article | 16 October 2007 Paper

Fabrication of InAs photodiodes with reduced surface leakage current

Andrew Marshall, Chee Hing Tan, John David, Jo Shien Ng, Mark Hopkinson

Proceedings Volume 6740, 67400H (2007) https://doi.org/10.1117/12.740700

KEYWORDS: Indium arsenide, Etching, Photodiodes, Electrons, Staring arrays, Avalanche photodetectors, Surface finishing, Wet etching, Anisotropic etching, Mid-IR

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Proceedings Article | 12 June 2001 Paper

Avalanche multiplication noise in bulk and thin AI(x)Ga(1-x)As (x=0-0.8) PIN and NIP diodes

Beng Ng, John David, Chee Tan, S. Plimmer, Graham Rees, Richard Tozer, Mark Hopkinson

Proceedings Volume 4288, (2001) https://doi.org/10.1117/12.429437

KEYWORDS: Aluminum, Gallium, Diodes, PIN photodiodes, Ionization, Gallium arsenide, Solids, Reverse modeling, Silicon, Avalanche photodetectors

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Proceedings Article | 19 April 2000 Paper

Design of low-noise avalanche photodiodes

John David, Chee Tan, S. Plimmer, Graham Rees, Richard Tozer, Peter Robson

Proceedings Volume 3950, (2000) https://doi.org/10.1117/12.382172

KEYWORDS: Ionization, Gallium arsenide, Silicon, Avalanche photodetectors, Doping, Avalanche photodiodes, Diodes, Monte Carlo methods, Phonons, Modeling

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Proceedings Article | 15 March 2000 Paper

Avalanche multiplication and noise in submicron Si p-i-n diodes

Chee Tan, John David, J. Clark, Graham Rees, S. Plimmer, David Robbins, David Herbert, Roger Carline, Weng Leong

Proceedings Volume 3953, (2000) https://doi.org/10.1117/12.379602

KEYWORDS: Silicon, Diodes, Ionization, Avalanche photodetectors, Gallium arsenide, Data modeling, Reverse modeling, Doping, Helium neon lasers, Absorption

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