In this study, we review our progress in micro/mini LED arrays and their numerical simulation in optical fields. The variation in substrate thickness will be included in the calculation and the results can provide detailed insight for the optimization of the micro/mini LED structures.
Van der Waals epitaxy (vdWE) is an approach to grow crystal materials of high quality on the substrates even under a poor lattice matching condition. Graphene has been investigated to be a desirable buffer layer between substrates and layered materials to achieve vdWE. In this work, BiI3, a layered semiconducting material with high light-harvesting capability in the visible range, is successfully grown on graphene substrates via vdWE and presents highly orientated and ordered film. This is attributed to weak van der Waals interactions at the graphene/BiI3 heterojunction, which is verified by photoemission spectroscopy. In addition, the highly sensitive photodetectors with graphene/BiI3 hybrid channels perform a negative photocurrent response and an ultrahigh photoresponsivity of ~106 A W−1 under dim light, which is comparable to most previously reported photodetectors with graphene/semiconductor vertical heterostructures. Furthermore, due to nearly free interfacial traps and dangling bonds at graphene/BiI3 van der Waals heterojunctions, the graphene−BiI3 hybrid photodetectors exhibit significantly faster photocurrent rise time (<10 ms) and fall time (~500 ms) as compared with graphene-based hybrid photodetectors with CH3NH3PbI3 perovskite absorber layer (rise (fall) time of ~2 s (~1s)).
We reported a couple of methods to improve electron injection from the ITO electrode, thereby to fabricate efficient
inverted bottom emission organic light emitting diodes (IBOLEDs). The first method is to use an n-doped electron
transporting layer (ETL) as the electron injection layer. Electron only device characteristics and UPS measurements
confirmed that B3PYMPM homo-junction has the lowest injection barrier at the interface among three different ETLs,
resulting in the highest maximum EQE of 19.8% at low voltage in IBOLEDs. The energy barrier between n-ETL and
ETL is one of the most important factors for high performance inverted OLEDs. The second method is to use an organic
p-n junction as an electron injection layer, where the p-n junction generated electrons and holes under reverse bias,
which corresponds to the forward bias in the OLEDs. The organic p-n junction composed of a p-CuPc/n-Bphen layer
shows almost the same electron injection characteristics for the cathodes with different work functions whereas the
injection characteristics of the n-Bphen EIL significantly depend on the work function of the cathode. These facts
indicate that the organic p-n junction can be efficiently applied as an electron injection layer for high performance
flexible organic electronics, regardless of the electrodes.
We provide a more compact fabrication process than the prior work using [6,6]-phenyl C61-butyric acid methyl ester (PCBM) buffer layer to enhance the performance of organic solar cells. The device with an extra PCBM layer exhibits an improved power conversion efficiency (PCE) of 20% as compared with the devices with conventional structures. Ultraviolet and x-ray photoemission spectroscopy indicate that thermal annealing treatments result in better mixture structures of PCBM layers with poly(3-hexylthiophene) at the blended surfaces. Therefore, the device with inserted PCBM provides more ideal hetero-structures and vertically graded PCBM distribution to optimize the charge extraction efficiency.
Turn on voltage in the current density-voltage characteristics is one of the important factors to evaluate the performance
of organic light emitting diodes (OLEDs). In this paper, we report investigation of the origins of turn-on voltage, defined
at where log J (current density) has a sharp rise and starts to increase dramatically. In OLEDs with NPB as the hole
transport layer (HTL) and Alq3 as the electron transport layer (ETL), we find that the turn on voltage is always at 2V,
regardless the cathode structures, such as Ca, Al, LiF/Al, and Cs2CO3/Al, being used. The turn on voltage is also
independent on the thickness of organic layers. Beside NPB and Alq3, we also study the J-V characteristics on OLEDs
with various combinations of HTLs and ETLs. In all the devices investigated, the turn on voltage just equals to the
difference between the LUMO of ETL and the HOMO of HTL, taking into consideration of vacuum level shift at organic
interfaces measured from the ultraviolet photoemission spectroscopy (UPS). Combined with J-V characteristics of
OLEDs and UPS measurement, we propose that the turn on voltage of organic light emitting devices is determined by
the difference between LUMO of ETL and HOMO of HTL and is independent of the cathode and thickness of organic
layers. We also found that the charge transfers at the interface of ETL/HTL play an important role to the turn on voltage
of OLEDs.
The effectiveness of carrier injection in electron transport layers has been investigated for high efficiency organic light
emitting devices. Via ultraviolet and x-ray photoemission spectroscopy (UPS and XPS), the carrier band structures,
interfacial interactions and electron-injection mechanisms are discussed. Acting as a good hole blocking layer with
higher mobility for electrons, 4,7-diphenyl-1, 10-phenanthroline (Bphen) was chosen to be the electron transport layer.
The performance of device used Rb2CO3 doped into Bphen is obviously better than the device even used LiF with
aluminum as cathode. According to the UPS spectra, the Fermi level of Bphen after doped with the ratio of 2% and 8%
rubidium carbonate (Rb2CO3) shifts toward the lowest unoccupied molecular orbital as a result of charge transfer from rubidium atom to Bphen, showing that electron-injection ability would be improved based on strong n-type doping
effect. Moreover, when aluminum is deposited as a thin layer on the surface of Bphen doped with Rb2CO3, the peak
around 5 eV, which is attributed to the delocalized Pi-electrons decreases as gap states appear around 2.8 eV at the top of
the highest occupied molecular orbital. There are changes in the binding energy of core levels of rubidium, nitrogen and
aluminum, which indicates a negative charge transfer to Bphen at the interface that could have the reduction of electroninjection
barrier height. Thus, the interfacial chemical reaction leads to the excellent electron injection ability could be demonstrated.
In this paper, we will present some studies of physics at the interfaces in the organic light emitting
devices. The paper can be separated into two parts. First part is the manipulation of interfacial energy
structures and electron transport properties of organic semiconductors. The second part is substitution
and dopant dependence of electronic structures in organic thin films
I will present an investigation of the energy structures and electrical doping mechanisms of the
organic semiconductor surface through current-voltage (I-V) characteristics and photoemission
spectroscopies. We found that both surface energy structures and transport properties can be
manipulated with mix of LiF or Cs2CO3. The I-V characteristics show that the current efficiency is
significantly improved with Cs2CO3 doped either at the surface or in the bulk Alq3. As Cs2CO3 doping
works efficiently with Al as well as other cathode metals, the interfacial chemistry and carrier injection
mechanisms of such cathode structures are compared to that of the conventional LiF thin layers.
To understand the mechanisms of the improvement on electron injection, the surface energy
levels of metal and organic materials were measured with ultraviolet photoemission spectroscopy
(UPS) and the interfacial chemistry was studied with X-ray photoemission spectroscopy (XPS). From
UPS spectra, we found that a thin layer of Cs2CO3, as thin as 0.5 A, at the metal and organic ETL
interface can bring the Fermi level of Alq3 from mid-gap to less than 0.2 eV below the lowest
unoccupied molecular orbital (LUMO), indicating that the Alq3 film at the interface is heavily n-type
doped with Cs2CO3 . The smaller gap between the Fermi level and LUMO with Cs2CO3 reduces the
electron injection barrier. Strong dipole fields are also found at the surface, which also affects the
electron injection considerably. The XPS data further show that Cs ions are dissociated at the interface
as soon as Cs2CO3 is deposited on Alq3. The result is different from the case of LiF, in which Al metal
is needed for releasing Li ions. With co-evaporation of Cs2CO3 with Alq3 in the bulk as n-doping ETL,
the current efficiency can be further improved, which is presumably attributed to the enhancement of
the electron transport in the Alq3 films.
The synthesis and properties of 3,6-bis(triphenylsilyl)carbazole as an effective host material for blue electrophosphorescence are reported. The electrochemically active C3 and C6 sites of carbazole are non-conjugated blocked with the steric, bulky and large-gap triphenylsilyls, the resulting new compound retains the large triplet energy of carbazole yet exhibits much enhanced morphological stability and electrochemical stability in comparison with previous carbazole-based host materials. Using this new host material, blue phosphorescent OLEDs having high efficiencies up to 16%, 30.6 cd/A and 26.7 lm/W are demonstrated.
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