Dr. Christoph Eichler Profile

Dr. Christoph Eichler

at ams-OSRAM International GmbH

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Author

Publications (13)

Proceedings Article | 15 March 2023 Presentation + Paper

InGaN semiconductor laser diodes for the visible spectral range: design and process optimization of single emitters and bars for applications from mW to kW output power

S. Gerhard, L. Nähle, B. Jentzsch, H. König, E. Reiger, U. Heine, S. Tautz, C. Eichler, G. Brüderl, T. Wurm, D. Borovac, M. Behringer, L. Kreiner, M. Jama, N. von Malm, A. Balck, M. Baumann, V. Krause

Proceedings Volume 12421, 124210G (2023) https://doi.org/10.1117/12.2648293

KEYWORDS: Laser resonators, Emission wavelengths, Photonic integrated circuits, Mirrors, Laser applications, Indium gallium nitride, Semiconductor lasers, Design and modelling, Laser development, Waveguides

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Proceedings Article | 2 March 2020 Paper

Blue high power InGaN semiconductor laser diodes: design optimization of laser bars and single emitters for best performance and reliability

Harald König, Sven Gerhard, Muhammad Ali, Urs Heine, Sönke Tautz, Christoph Eichler, Georg Brüderl, Matthias Peter, Alfred Lell, Martin Behringer, Markus Keidler, Tobias Haupeltshofer, Christoph Walter, Markus Baumann, Anne Balck, Volker Krause

Proceedings Volume 11262, 112620Q (2020) https://doi.org/10.1117/12.2543306

KEYWORDS: Semiconductor lasers, High power lasers, Fiber coupled lasers, Diodes, Reliability, Copper, Materials processing, Fiber couplers, Laser development, Laser processing

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Proceedings Article | 14 March 2019 Paper

Visible GaN laser diodes: from lowest thresholds to highest power levels

Harald König, Muhammad Ali, Werner Bergbauer, John Brückner, Georg Brüderl, Christoph Eichler, Sven Gerhard, Urs Heine, Alfred Lell, Lars Naehle, Matthias Peter, Jelena Ristic, Georg Rossbach, André Somers, Bernhard Stojetz, Soenke Tautz, Jan Wagner, Teresa Wurm, Uwe Strauss, Markus Baumann, Anne Balck, Volker Krause

Proceedings Volume 10939, 109390C (2019) https://doi.org/10.1117/12.2511976

KEYWORDS: Semiconductor lasers, Laser damage threshold, Laser applications, High power lasers, Materials processing, Gallium nitride, Projection systems, Laser processing, Fiber coupled lasers

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Proceedings Article | 19 February 2018 Paper

Blue 450nm high power semiconductor continuous wave laser bars exceeding rollover output power of 80W

H. König, A. Lell, B. Stojetz, M. Ali, C. Eichler, M. Peter, A. Löffler, U. Strauss, M. Baumann, A. Balck, J. Malchus, V. Krause

Proceedings Volume 10514, 1051402 (2018) https://doi.org/10.1117/12.2286875

KEYWORDS: Semiconductor lasers, High power lasers, Absorption, Materials processing, Semiconductors, Copper, Gold, Continuous wave operation, Gallium nitride

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Proceedings Article | 20 February 2017 Paper

GaInN laser diodes from 440 to 530nm: a performance study on single-mode and multi-mode R&D designs

Uwe Strauss, Andre Somers, Urs Heine, Teresa Wurm, Matthias Peter, Christoph Eichler, Sven Gerhard, Georg Bruederl, Soenke Tautz, Bernhard Stojetz, Andreas Loeffler, Harald Koenig

Proceedings Volume 10123, 101230A (2017) https://doi.org/10.1117/12.2254504

KEYWORDS: Semiconductor lasers, Gallium nitride, Laser applications, Gaussian beams, Reliability, Laser damage threshold, Waveguides, Laser video displays, Indium gallium nitride, Indium, Refractive index, Electro optics

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Proceedings Article | 13 March 2015 Paper

InGaN power laser chips in a novel 50W multi-die package

Andreas Loeffler, Christoph Eichler, Jens Mueller, Sven Gerhard, Bernhard Stojetz, Soenke Tautz, Clemens Vierheilig, Jelena Ristic, Adrian Avramescu, Markus Horn, Thomas Hager, Christoph Walter, Thomas Dobbertin, Harald Koenig, Uwe Strauss

Proceedings Volume 9363, 936318 (2015) https://doi.org/10.1117/12.2081065

KEYWORDS: Indium gallium nitride, Laser damage threshold, High power lasers, Pulsed laser operation, Continuous wave operation, Laser optics, Projection systems, Light, Thermography, Laser applications

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Proceedings Article | 8 March 2014 Paper

Recent advances in c-plane GaN visible lasers

Uwe Strauβ, Thomas Hager, Georg Brüderl, Teresa Wurm, André Somers, Christoph Eichler, Clemens Vierheilig, Andreas Löffler, Jelena Ristic, Adrian Avramescu

Proceedings Volume 8986, 89861L (2014) https://doi.org/10.1117/12.2041298

KEYWORDS: Laser damage threshold, Semiconductor lasers, Internal quantum efficiency, Quantum wells, Indium gallium nitride, Indium, Metals, External quantum efficiency, Gallium nitride, Quantum efficiency

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Proceedings Article | 4 March 2013 Paper

Power blue and green laser diodes and their applications

Thomas Hager, Uwe Strauß, Christoph Eichler, Clemens Vierheilig, Sönke Tautz, Georg Brüderl, Bernhard Stojetz, Teresa Wurm, Adrian Avramescu, André Somers, Jelena Ristic, Sven Gerhard, Alfred Lell, Stefan Morgott, Oliver Mehl

Proceedings Volume 8640, 86400G (2013) https://doi.org/10.1117/12.2006220

KEYWORDS: Semiconductor lasers, Light emitting diodes, Imaging systems, Indium gallium nitride, Light sources, Digital Light Processing, Projection systems, Thermal effects, Resistance, Laser marking

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Proceedings Article | 9 February 2012 Paper

Beyond blue pico laser: development of high power blue and low power direct green

Clemens Vierheilig, Christoph Eichler, Sönke Tautz, Alfred Lell, Jens Müller, Fabian Kopp, Bernhard Stojetz, Thomas Hager, Georg Brüderl, Adrian Avramescu, Teresa Lermer, Jelena Ristic, Uwe Strauss

Proceedings Volume 8277, 82770K (2012) https://doi.org/10.1117/12.917469

KEYWORDS: Semiconductor lasers, Pulsed laser operation, Continuous wave operation, High power lasers, Laser development, Laser applications, Diodes, Laser damage threshold, Laser optics, Gallium nitride

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Proceedings Article | 17 February 2011 Paper

Recent results of blue and green InGaN laser diodes for laser projection

Stephan Lutgen, Dimitri Dini, Ines Pietzonka, Soenke Tautz, Andreas Breidenassel, Alfred Lell, Adrian Avramescu, Christoph Eichler, Teresa Lermer, Jens Müller, Georg Bruederl, Alvaro Gomez-Iglesias, Uwe Strauss, Wolfgang Scheibenzuber, Ulrich Schwarz, Bernhard Pasenow, Stephan Koch

Proceedings Volume 7953, 79530G (2011) https://doi.org/10.1117/12.874757

KEYWORDS: Semiconductor lasers, Laser damage threshold, Diodes, Indium gallium nitride, Gallium nitride, Laser applications, Pulsed laser operation, Waveguides, Temperature metrology, Continuous wave operation

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Mobile laser projection is of great commercial interest. Today, a key parameter in embedded mobile applications is the optical output power and the wall plug efficiency of blue and green lasers. We report on improvements of the performance of true blue riedge waveguide InGaN lasers at 452nm with cw-output power up to 800mW in overstress and mono mode operation up to 500mW in a temperatures range of 20°C to 80°C. We succeeded in high and almost temperature independent wall plug efficiencies >20% at stable output power levels from 200 to 500mW in cw-operation. Due to several improvements of our blue laser diodes we now estimate life times is in the order of 40khrs for 80mW output power in cw-operation at 40°C. Additional overstress degradation tests at power levels up to 200mW show a strong dependency of lifetime with output power. Furthermore, we present pioneering results on true green InGaN laser diodes on c-plane GaN-substrates. The technological challenge is to achieve In-rich InGaN-quantum wells with sufficiently high material quality for lasing. We investigated the competing recombination processes below laser threshold like nonradiative defect recombination by electro-optical measurements, such confirming that low defect densities are essential for stimulated emission. A model for alloy fluctuations in In-rich InGaN-MQWs based on spectral and time resolved photoluminescence measurements yields potential fluctuations in the order of E₀=57meV for our blue laser diodes. To get a closer insight into the physics of direct green InGaN-Laser we investigated the inhomogeneous broadening of experimentally measured gain curves via Hakki-Paoli-measurements in comparison to calculated gain spectra based on microscopic theory showing the importance of strong LO-phonon coupling in this material system. Investigations of current dependent gain measurements and calculations yield a factor of 2 higher inhomogeneous broadening for our green lasers than for our blue laser diodes on c-plane GaN. Based on the improvements of the material quality and design we demonstrate true green InGaN-Laser in cw-operation at 522nm with more than 80mW output power on c-plane GaN. The combination of low laser threshold ~60-80mA, high slope efficiency ~0.65W/A and low operating voltage 6.9-6.4V of our green monomode RWG-Laser results in a high wall plug efficiency of 5-6% in a temperature range of 20-60°C.

Proceedings Article | 15 February 2008 Paper

True-blue InGaN laser for pico size projectors

U. Strauβ, S. Brüninghoff, M. Schillgalies, C. Vierheilig, N. Gmeinwieser, V. Kümmler, G. Brüderl, S. Lutgen, A. Avramescu, D. Queren, D. Dini, C. Eichler, A. Lell, U. Schwarz

Proceedings Volume 6894, 689417 (2008) https://doi.org/10.1117/12.761720

KEYWORDS: Indium gallium nitride, Magnesium, Laser damage threshold, Quantum wells, Semiconductor lasers, Luminescence, Reflectivity, Projection systems, Doping, Laser applications

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Proceedings Article | 21 June 2004 Paper

Absorption in InGaN-on-sapphire LED structures: comparison between photocurrent measurement method (PMM) and photothermal deflection spectroscopy (PDS)

Sven Schad, Barbara Neubert, Jens Bruening, Christoph Eichler, Frank Habel, Ferdinand Scholz, Peter Unger, Daniel Hofstetter

Proceedings Volume 5366, (2004) https://doi.org/10.1117/12.528783

KEYWORDS: Absorption, Light emitting diodes, Sapphire, Gallium nitride, Scattering, Waveguides, Spectroscopy, Absorbance, Sensors, Data modeling

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Proceedings Article | 3 July 2003 Paper

Absorption of guided modes in light-emitting diodes

Sven-Silvius Schad, Barbara Neubert, Matthias Seyboth, Frank Habel, Christoph Eichler, Marcus Scherer, Peter Unger, Wolfgang Schmid, Christian Karnutsch, Klaus Streubel

Proceedings Volume 4996, (2003) https://doi.org/10.1117/12.476552

KEYWORDS: Absorption, Light emitting diodes, Waveguides, Interfaces, Scattering, Sensors, Dispersion, Light scattering, Wave propagation, Reflection

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Showing 5 of 13 publications

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