Vertical organic field effect transistors (VOFET) and vertical static induction transistor (VSIT) have shown the advances of large on-current, high compatibility with sensors, ease of solution-processing and good mechanical flexibility. However, there has been no concise and explicit theories for these transistors. Here, we draw the physical images of the mechanisms, derive the electrostatic potentials, and propose the simple current-voltage relations for these vertical organic transistors. The theory has been verified by numerical simulation and are consistent with experimental results. The theories also provide guidances for device designing toward sharp turn-on properties, a large on-off ratio and good saturation degree.
For non-ideal field-effect transistors (FETs) or thin-film transistors (TFTs), conventional current-voltage characterizations do not accurately probe charge transport, particularly for newly developed semiconductors. Here, we explore the device physics of non-uniformly accumulated FETs and develop the generalized gated four-probe (G-GFP) technique, which detects dynamic change in carrier accumulation and transport.
In experiments, FETs with controllable injection are fabricated and the G-GFP technique proves to avoid the errors brought about by conventional characterizations, to exclude the temperature-dependent injection, to detect in-situ the channel potential, and to clarify the gate-dependent mobility and origin of non-ideal characteristics.
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