Due to the thermal deposition, the switching ratio of the amplitude OASLM will be reduced, so it is difficult to play a better effect in the high average power laser system. In this paper, through the analysis of laser-induced temperature rise model and liquid crystal layer voltage model and experiments, we show that with the same aperture and same switching ratio, the tolerable optical power density will decrease with the larger irradiation spot area. When the spot diameter decreases from 8 mm to 3 mm without heat dissipation treatment, the temperature of the OASLM emitting surface decreases from 39.6 °C to 33 °C, and the laser tolerated power density improves from 32.8 W/ cm2 to 120 W/ cm2, but the total tolerated power decreases from 16.5 W to 8.5 W. Therefore, in order to improve the total power tolerance of the optical addressable spatial light modulator, it is still an important technical way to improve the clear aperture of the optical addressable spatial light modulator.
In this paper, in order to provide theoretical support for the higher laser damage resistant Optically-Addressable liquid crystal Light Valve (OALV) technology research, the laser damage model of liquid crystal optical devices under high power laser is established, and the damage characteristics of optically addressed spatial light modulators based on Si-doped gallium nitride (GaN) electrode and based on indium tin oxide (ITO) electrode are researched. Their thermal distribution and thermal stress under high power laser are analyzed respectively. The results show that the laser damage threshold of liquid crystal device with ITO electrode is only 500 mJ/cm2, and the GaN electrode is several times larger than the former under pulse laser irradiation, the electrode of both liquid crystal devices are damaged first. Under the irradiation of high average power laser, the liquid crystal device of ITO electrode will reach the clear point first because of the thermal deposition. However, in liquid crystal devices with GaN electrode, the temperature rise of liquid crystal is small and the temperature distribution is uniform. GaN electrode has better thermal stability than ITO electrode under cooling measures. This undoubtedly shows that liquid crystal optical devices with GaN electrode have a good development potential in high power laser systems.
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