Mr. David Rapp Profile

David Rapp

at Coherent Mainz

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Proceedings Article | 4 March 2022 Presentation + Paper

Multi-watt (AlGaIn)(AsSb) diode lasers between 1.9µm and 2.3µm

J. Neukum, P. Friedmann, S. Hilzensauer, D. Rapp, H. Kissel, J. Gilly, M. Kelemen

Proceedings Volume 11983, 119830H (2022) https://doi.org/10.1117/12.2607747

KEYWORDS: Semiconductor lasers, Resonators, Continuous wave operation, Waveguides, Laser resonators, Pulsed laser operation, Gallium antimonide, Cladding, Temperature metrology, Quantum wells

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High power diode lasers emitting at wavelengths between 1900 nm and 2300 nm open a wide range of defence applications as compact and efficient light sources in the fields of infrared countermeasures (IRCM) or pumping of solidstate lasers emitting in the 2-4μm regime as well as civilian applications in the fields of laser surgery and medical diagnostics. For all these applications multi-watt output power, long lifetimes, a low-cost packaging technology and fiber coupling are requested. Diode lasers fabricated using the (AlGaIn)(AsSb) materials system are naturally predestined for this wavelength range and offer clear advantages in comparison to InP based diode lasers in terms of output power and wall-plug efficiency. Laser structures for different wavelengths between 1900nm and 2300nm designed for <40° fast axis far field (FWHM) were grown on (100)-oriented 3-inch n-type GaSb:Te substrates by solid-source molecular beam epitaxy. Gain-guided broad-area lasers with stripe widths of 100μm, 150μm and 200μm and different resonator lengths have been fabricated using standard optical lithography combined with ICP etching techniques for lateral patterning. The wafers were cleaved either into single emitters with different resonator lengths or as laser arrays. The lasers can be soldered by soft solder as well as hard solder. Depending on the resonator design and the wavelength, these single emitters offer up to 1.7W in cw operation and more than 5.8W in µs-pulsed operation with efficiencies well beyond 25% and with demonstrated long lifetime. For even higher power levels linear arrays of 20 broad area emitters offer up to 20W cw output power or 30W in pulsed mode.

Proceedings Article | 5 March 2021 Presentation + Paper

High-power high-brightness lasers and amplifiers at 15xx nm

P. Friedmann, S. Hilzensauer, D. Rapp, T. Tanbun-Ek, J. Gilly, M. Kelemen

Proceedings Volume 11668, 116680O (2021) https://doi.org/10.1117/12.2578108

KEYWORDS: Amplifiers, High power lasers, Semiconductor lasers, Resonators, Laser resonators, Laser processing, LIDAR, Solids, Raman spectroscopy, Near field

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High-power spatially single-mode diode lasers at 15xx nm wavelengths are of interest for Light Detection and Ranging (LIDAR) at eye-safe wavelengths, as pump lasers for Raman and rare-earth doped fiber amplifiers as well as for material processing. A cost-efficient way to realize high-power in combination with high-brightness is the tapered resonator concept. We demonstrate InGaAsP/InP based diode lasers and tapered amplifiers with fast axis far fields of 36° FWHM and wavelengths around 1550 nm which were grown by MOCVD. From processed broad area lasers with 2mm resonator length and 100µm stripe width and 1mm long ridge-waveguide lasers, parameters for the logarithmic gain model are evaluated. With their implementation in 2-dimensional BPM simulations, an optimized resonator geometry has been derived for aiming 1W in cw operation and 2W in pulsed mode. The optimised design consists of a ridge section length of 310µm and a taper section length of 2190μm. Different taper designs have been processed and investigated in detail. In dependence on the taper angle ridge widths are between 4 and 5μm. For narrow-linewidth operation, the tapered devices are provided with anti-reflection coatings of less than 0.01% on the rear facets and spectrally stabilized with an external grating. Beside the electro-optical characterisation, beam quality has been characterized in terms of beam waist analysis and M2.

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