In 2005, Freescale Semiconductor's newly centralized mask data prep organization (MSO) initiated a project
to develop an automated global quality validation system for photomasks delivered to Freescale
Semiconductor fabs. The system handles Certificate of Conformance (CofC) quality metric collection,
validation, reporting and an alert system for all photomasks shipped to Freescale fabs from all qualified
global suppliers. The completed system automatically collects 30+ quality metrics for each photomask
shipped. Other quality metrics are generated from the collected data and quality metric conformance is
automatically validated to specifications or control limits with failure alerts emailed to fab photomask and
mask data prep engineering. A quality data warehouse stores the data for future analysis, which is performed
quarterly. The improved access to data provided by the system has improved Freescale engineers' ability to
spot trends and opportunities for improvement with our suppliers' processes. This paper will review each
phase of the project, current system capabilities and quality system benefits for both our photomask suppliers
and Freescale.
With design rules continuing to shrink down to 0.18 micrometer and beyond, various small OPC features have been used more and more by the semiconductor industry to increase the process latitude depth of focus), preserve the printing pattern fidelity on the wafer and extend the lifetime of photolithography technology. These various sub resolution OPC features directly challenge the inspection capability of the most advanced inspection systems. Die to die and die to database inspection capabilities must be characterized. A comprehensive 'HellOPC' test mask has been designed and developed for the OPC inspection evaluation. We have evaluated the OPC inspection capability of various OPC features for four technology levels that are 0.25 micrometer, 0.225 micrometer, 0.18 micrometer and 0.15 micrometer with Die to Die and Die to Database modes with this 'HellOPC' test mask. Runability (runability equals inspectability) maps for various technology levels and various OPC sizes have been presented. The results showed die to die inspection capability is much better than die to database for the advanced OPC inspection. The APA on KLA351 and the AOP215 on KLA353 have been evaluated in this work.
It is becoming increasingly clear that semiconductor manufacturers must rise to the challenge of extending optical microlithography beyond what is forecast by the current SIA roadmap. Capabilities must be developed that allow the use of conventional exposure methods beyond their designed capabilities. This is driven in part by the desire to keep up with the predictions of Moore's law. Additional motivation for implementing optical extension methods is provided by the need for workable alternatives in the event that manufacturing capable post-optical lithography is delayed beyond 2003. Major programs are in place at semiconductor manufacturers, development organization, and EDA software providers to continue optical microlithography far past what were once thought to be recognized limits. This paper details efforts undertaken by Motorola to produce functional high density silicon devices with sub-eighth micron transistor gates using DUV microlithography. The preferred enhancement technique discussed here utilizes complementary or dual-exposure trim-mask PSM which incorporates a combined exposure of both Levenson hard shifter and binary trim masks.
2D optical proximity correction (OPC) will be a requirement for patterning the 0.18 micrometers lithographic generation with current 0.6NA 248nm wavelength toolsets. This paper analyzes the process transformation of 2D OPC shapes between the design, reticle and wafer stages of patterning 0.18 micrometers random logic circuits. High resolution reticle SEM photos showcase reticle patterning non-linearities which must be understood to fully optimize OPC designs. Experiment and tuned lithography simulation are used to highlight the errors which can occur if these non-linearities are ignored. Significant differences are observed between OPC shapes for brightfield and darkfield features. Comparisons between OPC shapes patterned on electron-beam and optical-laser reticle writing tools are also provided as is a look ahead to the OPC requirements of the 0.15 micrometers generation.
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