Prof. Emilie Pougeoise Profile

Prof. Emilie Pougeoise

at CEA-LETI

SPIE Involvement:

Author

Publications (4)

Proceedings Article | 23 February 2007 Paper

1.3 µm VCSELs: InGaAs/GaAs, GaInNAs/GaAs multiple quantum wells, and InAs/GaAs quantum dots — three candidates as active material

Ph. Gilet, E. Pougeoise, L. Grenouillet, Ph. Grosse, N. Olivier, S. Poncet, A. Chelnokov, J. M. Gérard, R. Stevens, R. Hamelin, M. Hammar, J. Berggren, P. Sundgren

Proceedings Volume 6484, 64840F (2007) https://doi.org/10.1117/12.700403

KEYWORDS: Vertical cavity surface emitting lasers, Oxides, Indium gallium arsenide, Quantum wells, Gallium arsenide, Aluminum, Quantum dots, Gallium, Continuous wave operation, Oxidation

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Proceedings Article | 7 July 2006 Paper

GaIn(N)As/GaAs VCSELs emitting in the 1.1-1.3 μm range

L. Grenouillet, P. Duvaut, N. Olivier, P. Gilet, P. Grosse, S. Poncet, P. Philippe, E. Pougeoise, L. Fulbert, A. Chelnokov

Proceedings Volume 6350, 63500G (2006) https://doi.org/10.1117/12.692829

KEYWORDS: Vertical cavity surface emitting lasers, Quantum wells, Doping, Oxides, Nitrogen, Continuous wave operation, Mirrors, Gallium arsenide, Molecular beam epitaxy, Photonics

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Proceedings Article | 21 April 2006 Paper

Experimental characteristics and analysis of transverse modes in 1.3-µm strained InGaAs quantum well VCSELs

E. Pougeoise, Ph. Gilet, Ph. Grosse, S. Poncet, A. Chelnokov, J.-M. Gérard, G. Bourgeois, R. Stevens, R. Hamelin, M. Hammar, J. Berggren, P. Sundgren, Sébastien Vilain, J.-S. Bouillard, G. Lerondel, R. Bachelot, P. Royer

Proceedings Volume 6185, 61850U (2006) https://doi.org/10.1117/12.662118

KEYWORDS: Vertical cavity surface emitting lasers, Oxides, Quantum wells, Indium gallium arsenide, Near field scanning optical microscopy, Near field optics, Continuous wave operation, Gallium arsenide, Optical fibers, Semiconducting wafers

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Proceedings Article | 10 February 2006 Paper

1.3 μm strained InGaAs quantum well VCSELs: operation characteristics and transverse modes analysis

E. Pougeoise, Ph. Gilet, Ph. Grosse, S. Poncet, A. Chelnokov, J.-M. Gérard, G. Bourgeois, R. Stevens, R. Hamelin, M. Hammar, J. Berggren, P. Sundgren

Proceedings Volume 6132, 613207 (2006) https://doi.org/10.1117/12.646140

KEYWORDS: Vertical cavity surface emitting lasers, Oxides, Indium gallium arsenide, Quantum wells, Continuous wave operation, Semiconducting wafers, Waveguides, Gallium arsenide, Pulsed laser operation, Temperature metrology

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