Prof. Euijoon Yoon Profile

Prof. Euijoon Yoon

Professor at Seoul National Univ

SPIE Involvement:

Conference Program Committee | Author | Editor

Proceedings Article | 13 March 2019 Presentation

Sapphire nanomembrane technology for high-efficiency micro-LED displays (Conference Presentation)

Euijoon Yoon

Proceedings Volume 10918, 1091803 (2019) https://doi.org/10.1117/12.2511100

KEYWORDS: Sapphire, Nanotechnology, Epitaxy, Crystals, Atomic layer deposition, Gallium nitride

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Proceedings Article | 4 March 2019 Presentation

Alumina nanomembrane structures for highly-efficient GaN-based LEDs (Conference Presentation)

Euijoon Yoon, Sun-Kyung Kim

Proceedings Volume 10940, 109400L (2019) https://doi.org/10.1117/12.2511333

KEYWORDS: Light emitting diodes, Sodium, Diffraction, Sapphire, Gallium nitride, Optical properties, Crystals

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Proceedings Article | 24 June 2014 Paper

Multi-step plasma etching process for development of highly photosensitive InSb mid-IR FPAs

Chulkyun Seok, Minkyung Choi, In-Sang Yang, Sehun Park, Yongjo Park, Euijoon Yoon

Proceedings Volume 9070, 907018 (2014) https://doi.org/10.1117/12.2053215

KEYWORDS: Etching, Argon, Reactive ion etching, Plasma etching, Mid-IR, Ion beams, Raman spectroscopy, Ions, Sensors, Plasma

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Proceedings Article | 27 March 2013 Paper

Application of DERI method to InN/InGaN MQW, thick InGaN and InGaN/InGaN MQW structure growth

T. Yamaguchi, K. Wang, T. Araki, T. Honda, E. Yoon, Y. Nanishi

Proceedings Volume 8625, 862502 (2013) https://doi.org/10.1117/12.2007258

KEYWORDS: Indium gallium nitride, Indium nitride, Gallium, Dielectrophoresis, Gallium nitride, Nitrogen, Light emitting diodes, Scanning transmission electron microscopy, Infrared radiation, Semiconductors

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Proceedings Article | 2 September 2005 Paper

Recent development of patterned structure light-emitting diodes

Jaehee Cho, Jeong Wook Lee, Jin Seo Im, Cheolsoo Sone, Yongjo Park, Dongho Kim, Heonsu Jeon, Euijoon Yoon, Dong-Seok Leem, Tae-Yeon Seong

Proceedings Volume 5941, 594102 (2005) https://doi.org/10.1117/12.625922

KEYWORDS: Light emitting diodes, Sapphire, Electrodes, Gallium nitride, Copper indium disulfide, Semiconductors, Interfaces, Optical lithography, Holography, Light scattering

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Proceedings Article | 1 July 2003 Paper

Growth and in situ analysis of InAs/InP quantum dot stack and its far infrared absorption properties

Heedon Hwang, Kwangmin Park, Sukho Yoon, Euijoon Yoon, Hyeonsik Cheong, Young Kim

Proceedings Volume 4999, (2003) https://doi.org/10.1117/12.482480

KEYWORDS: Indium arsenide, Absorption, Reflectivity, Quantum dots, Infrared radiation, Raman spectroscopy, FT-IR spectroscopy, Spectroscopy, Far infrared, Plasmons

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Showing 5 of 6 publications

SPIE Conference Volume | 4 April 2014

Gallium Nitride Materials and Devices IX

SPIE Conference Volume | 11 April 2013

Gallium Nitride Materials and Devices VIII

SPIE Conference Volume | 15 March 2012

Gallium Nitride Materials and Devices VII

SPIE Conference Volume | 18 February 2011

Gallium Nitride Materials and Devices VI

SPIE Conference Volume | 10 March 2010

Gallium Nitride Materials and Devices V

Showing 5 of 7 publications

Conference Committee Involvement (18)

Gallium Nitride Materials and Devices XIX

29 January 2024 | San Francisco, California, United States

Gallium Nitride Materials and Devices XVIII

30 January 2023 | San Francisco, California, United States

Gallium Nitride Materials and Devices XVII

24 January 2022 | San Francisco, California, United States

Gallium Nitride Materials and Devices XVI

6 March 2021 | Online Only, California, United States

Gallium Nitride Materials and Devices XV

4 February 2020 | San Francisco, California, United States

Gallium Nitride Materials and Devices XIV

4 February 2019 | San Francisco, California, United States

Gallium Nitride Materials and Devices XIII

29 January 2018 | San Francisco, California, United States

Gallium Nitride Materials and Devices XII

30 January 2017 | San Francisco, California, United States

Gallium Nitride Materials and Devices XI

15 February 2016 | San Francisco, California, United States

Gallium Nitride Materials and Devices X

9 February 2015 | San Francisco, California, United States

Gallium Nitride Materials and Devices IX

3 February 2014 | San Francisco, California, United States

Gallium Nitride Materials and Devices VIII

4 February 2013 | San Francisco, California, United States

Gallium Nitride Materials and Devices VII

23 January 2012 | San Francisco, California, United States

Gallium Nitride Materials and Devices VI

24 January 2011 | San Francisco, California, United States

Gallium Nitride Materials and Devices V

25 January 2010 | San Francisco, California, United States

Gallium Nitride Materials and Devices IV

26 January 2009 | San Jose, California, United States

Gallium Nitride Materials and Devices III

21 January 2008 | San Jose, California, United States

Advanced LED for Solid-State Lighting (Special Symposium)

5 September 2006 | Gwangju, South Korea

Showing 5 of 18 Conference Committees

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