Mr. Frank Goodwin Profile

Frank Goodwin

EUV Mask Defect Reduction Manager at SUNY Poly SEMATECH

SPIE Involvement:

Author

Publications (47)

Proceedings Article | 6 April 2015 Paper

Application of differential phase contrast imaging to EUV mask inspection: a numerical study

Xibin Zhou, Dominic Ashworth, Frank Goodwin, Kevin Cummings

Proceedings Volume 9422, 94221E (2015) https://doi.org/10.1117/12.2085945

KEYWORDS: Extreme ultraviolet, Inspection, Phase contrast, Photomasks, Extreme ultraviolet lithography, Defect inspection, Computer simulations, Infrared imaging, Phase shift keying, Defect detection

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Proceedings Article | 6 April 2015 Paper

SEMATECH produces defect-free EUV mask blanks: defect yield and immediate challenges

Alin Antohe, Dave Balachandran, Long He, Patrick Kearney, Anil Karumuri, Frank Goodwin, Kevin Cummings

Proceedings Volume 9422, 94221B (2015) https://doi.org/10.1117/12.2176126

KEYWORDS: Photomasks, Extreme ultraviolet, Inspection, Extreme ultraviolet lithography, Silica, Deposition processes, Standards development, Manufacturing, Ruthenium, Reflectivity

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Proceedings Article | 6 April 2015 Paper

Magnetron sputtering for the production of EUV mask blanks

Patrick Kearney, Tat Ngai, Anil Karumuri, Jung Yum, Hojune Lee, David Gilmer, Tuan Vo, Frank Goodwin

Proceedings Volume 9422, 94220H (2015) https://doi.org/10.1117/12.2087773

KEYWORDS: Photomasks, Extreme ultraviolet, Reflectivity, Sputter deposition, Multilayers, Semiconducting wafers, Ion beams, Manufacturing, Silicon, EUV optics

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Proceedings Article | 28 July 2014 Paper

Ruthenium (Ru) peeling and predicting robustness of the capping layer using finite element method (FEM) modeling

Il-Yong Jang, Arun John, Frank Goodwin, Su-Young Lee, Byung-Gook Kim, Seong-Sue Kim, Chan-Uk Jeon, Jae Hyung Kim, Yong Hoon Jang

Proceedings Volume 9256, 92560I (2014) https://doi.org/10.1117/12.2069991

KEYWORDS: Ruthenium, Silicon, Extreme ultraviolet, Finite element methods, Interfaces, Oxides, Oxygen, Neodymium, Photomasks, Oxidation

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Proceedings Article | 28 July 2014 Paper

Extreme ultraviolet mask roughness: requirements, characterization, and modeling

Patrick Naulleau, Suchit Bhattaria, Rick Chao, Rene Claus, Kenneth Goldberg, Frank Goodwin, Eric Gullikson, Donggun Lee, Andy Neureuther, Jong-Ju Park

Proceedings Volume 9256, 92560J (2014) https://doi.org/10.1117/12.2070303

KEYWORDS: Photomasks, Extreme ultraviolet, Speckle, Line width roughness, Inspection, Atomic force microscopy, Lithography, Scattering, Scatter measurement, Line edge roughness

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Proceedings Article | 17 April 2014 Paper

Production of EUV mask blanks with low killer defects

Alin Antohe, Patrick Kearney, Milton Godwin, Long He, Arun John Kadaksham, Frank Goodwin, Al Weaver, Alan Hayes, Steve Trigg

Proceedings Volume 9048, 90480H (2014) https://doi.org/10.1117/12.2048541

KEYWORDS: Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Inspection, Ruthenium, Failure analysis, Transmission electron microscopy, Ions, Silica, Multilayers

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Proceedings Article | 17 April 2014 Paper

Direct measurement of carbon contamination topography on patterned EUV masks

Yu-Jen Fan, Thomas Murray, Frank Goodwin, Dominic Ashworth, Gregory Denbeaux

Proceedings Volume 9048, 90480O (2014) https://doi.org/10.1117/12.2048092

KEYWORDS: Contamination, Extreme ultraviolet, Photomasks, Carbon, Transmission electron microscopy, Extreme ultraviolet lithography, Photons, Silicon, Semiconducting wafers, Ruthenium

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Proceedings Article | 17 April 2014 Paper

Driving the industry towards a consensus on high numerical aperture (high-NA) extreme ultraviolet (EUV)

Patrick Kearney, Obert Wood, Eric Hendrickx, Greg McIntyre, Soichi Inoue, Frank Goodwin, Stefan Wurm, Jan van Schoot, Winfried Kaiser

Proceedings Volume 9048, 90481O (2014) https://doi.org/10.1117/12.2048397

KEYWORDS: Photomasks, Extreme ultraviolet, Mirrors, Semiconducting wafers, Extreme ultraviolet lithography, Scanners, Imaging systems, 3D image processing, Reflectivity, Optical lithography

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Proceedings Article | 18 March 2014 Paper

Mitigation of EUV mask blank substrate pit and scratch defects by Accelerated Neutral Atom Beam (ANAB) processing

M. Walsh, K. Chau, S. Kirkpatrick, R. Svrluga, B. Piwczyk, F. Goodwin, D. Balachandran

Proceedings Volume 9048, 90480I (2014) https://doi.org/10.1117/12.2046686

KEYWORDS: Chemical species, Extreme ultraviolet, Photomasks, Sputter deposition, Surface roughness, Argon, Surface finishing, Ions, Polishing, Chemical mechanical planarization

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Proceedings Article | 3 October 2013 Paper

Investigation of EUVL reticle capping layer peeling under wet cleaning

Sherjang Singh, Davide Dattilo, Uwe Dietze, Arun Kadaksham, Il-Yong Jang, Frank Goodwin

Proceedings Volume 8880, 888010 (2013) https://doi.org/10.1117/12.2031430

KEYWORDS: Lamps, Photomasks, Extreme ultraviolet lithography, Ruthenium, Oxygen, Mercury, Reticles, Semiconducting wafers, Reflectivity, Ultraviolet radiation

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Proceedings Article | 1 October 2013 Paper

Recent advances in SEMATECH's mask blank development program, the remaining technical challenges, and future outlook

Frank Goodwin, Patrick Kearney, Arun Kadaksham, Stefan Wurm

Proceedings Volume 8886, 88860C (2013) https://doi.org/10.1117/12.2039943

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Extreme ultraviolet, Reflectivity, Multilayers, Ions, Optical lithography, Ion beams, Deposition processes, Coating

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The ability of optical lithography to steadily produce images at increasingly smaller dimension while maintaining pattern fidelity of devices with greater complexity has enabled the success of Moore’s Law. Although 193 nm immersion and double patterning techniques have proven successful in extending optical lithography, the strategies proposed for further extension are too costly to support device manufacturing. As a result, greater focus has been shifted to resolving the challenges hindering extreme ultraviolet lithography (EUVL) adoption as the mainstream lithography solution. While similar to conventional optical lithography, there are unique challenges to EUVL, one of which is the change from transmission masks to the reflective masks required for EUVL. The use of reflective reticles greatly increases complexity of EUV reticle structure when compared to the binary masks used with optical lithography. Maximizing the reflectance an EUV mask requires the use of a multilayer Bragg reflector deposited on a finely polished substrate with a thin absorber film on top used to define the device pattern. Although similar in form to the substrates used in optical lithography, the tolerances on figure, surface finish, and defects are significantly more stringent for EUV substrates. Control of aberrations and maintaining pattern fidelity places tight constraints on the flatness and roughness of the EUV substrate; imperfections and particles can result in printable defects. The Bragg reflector of the EUV mask consists of 40 to 50 Si/Mo bi-layers deposited using an ion beam deposition tool. This film stack must be deposited to meet the reflectivity and uniformity requirements of the exposure tool and must be completely free of defects. The absorber film is typically a tantalum-based nitride layer selected for its ability to absorb EUV radiation and maintain thermal stability. The thickness and morphology of this film must be tightly controlled to enable use as the patterning film for the device. In addition to the increase in complexity of the mask, introduction of EUVL requires infrastructure development of new substrate, mask blank, and finished reticle inspection tools and techniques for handling and storage of a mask without a pellicle. This paper will highlight recent advances in the ability to produce pilot line quality EUV mask blanks to meet the near-term requirements and review the existing technology gaps which must be closed to extend the current capability to meet HVM needs. A special focus will be put on substrate and mask blank defect densities; other process and infrastructure challenges will also be discussed.

Proceedings Article | 23 September 2013 Paper

EUV scatterometry-based measurement method for the determination of phase roughness

Rikon Chao, Eric Gullikson, Michael Goldstein, Frank Goodwin, Ranganath Teki, Andy Neureuther, Patrick Naulleau

Proceedings Volume 8880, 88801B (2013) https://doi.org/10.1117/12.2027695

KEYWORDS: Scatterometry, Photomasks, Extreme ultraviolet, Atomic force microscopy, Multilayers, Scatter measurement, Reflectivity, Coating, Surface roughness, Scattering

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Proceedings Article | 28 June 2013 Paper

Defect printability studies at SEMATECH

Il-Yong Jang, Ranganath Teki, Vibhu Jindal, Frank Goodwin, Masaki Satake, Ying Li, Danping Peng, Sungmin Huh, Seong-Sue Kim

Proceedings Volume 8701, 870111 (2013) https://doi.org/10.1117/12.2028069

KEYWORDS: Semiconducting wafers, Double positive medium, Photomasks, Critical dimension metrology, Data modeling, Calibration, Extreme ultraviolet, Extreme ultraviolet lithography, Printing, Inspection

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