Mask set price is soaring along with technology node advancement. One reason is that the number
of masks per set is increasing with the geometry scaling. Another reason is that low k1 lithography with
highly complex OPCs tightens dimensional mask specifications as to result in higher mask-making tool costs
and lower production yield.
Under these circumstances, tool cost reduction and production yield improvement are immensely
required to reduce mask cost. Expensive quality-assured tools are indispensable to achieve the desired
accuracy. Then, higher throughput and technical applicability of the same tool over multiple generations are
definitely needed to improve total tool CoO. Meanwhile, not only such conventional basic approaches as
improving field level and process performance but optimizing mask specifications efficiently is emerging as a
key factor for keeping mask production yield high. Usually mask specifications are determined by the error
budget allocated from the total lithography budget. In order to cope with the tighter specifications some
sensible approaches have recently been proposed. Mask DFM is receiving particular attention as a new
method being strongly linked to lithography and wafer fabrication technologies (1)(2)(3)(4).
In this presentation, logical way to define the main mask specifications such as CD, defect and
image placement accuracy is shown and sensible ways to sustain them are referred.
The severe mask specification makes mask cost increase drastically. Especially, the increase in the mask cost deals ASIC businesses a fatal blow due to its small chip volume per product. Pattern writing cost has always occupied the main part of the prime mask cost and the emphasis of this is still increasing. This paper reports on a Photomask Repeater strategy to be a solution for reducing mask cost in pattern writing, comparing with conventional EB system.
Lately laser writing tools have been dominated for producing leading-edge reticles. In addition, high resolution resist adjusted to the writing tool is strongly required to enhance the mask-making process capability. Here we have developed an i-line positive photoresist named 'THMR M100'. The most significant feature of the resists is higher contrast that can bring us high-resolution patterns as well as better CD accuracy. We realized 0.4 micron or less patterns were able to be formed with its high-contrast process in combination with ALTA tool. In fact the separate resolution was 0.3 micron. Furthermore, almost vertical side-wall angle of the developed resist was also achieved. We will deliver the excellent performance for fabricating the high-end reticles that this newly developed resist indicated.
A new clustered configurational photomask cleaning system has been developed. Accepting the clustered configuration, we can be free from the heavy tank photomask cleaner which has a large footprint and has no flexibility for designing a cleaning recipe. Provided we need to introduce a new cleaning process unit, we can substitute the unit by disassembling an old one in the system. We can always keep our photomask cleaner up-to date with the system, and, we can obtain most effective cleaning result by the least efforts and the smallest expense. Using this cleaning system with an optimized cleaning recipe, we have achieved the cleaning result of less than one particle, greater than 0.2 micrometers , detected by KLA Starlight.
An algorithm necessary to decide the optimum optical properties of a single-layer halftone (HT) mask has been established. This paper reveals the relations between the refractive index n and the extinction coefficient k, and thickness d, and describes how to select optimum films among various materials. It has been found that SiNx is a good material for a single-layer HT mask for I-line (365 nm) and KrF (248 nm). The lithographic performance of an I-line SiNx HT mask for grouped line and space (L&S) patterns under annular illumination has also been demonstrated.
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