Dr. Ganesh Sundaram Profile

Dr. Ganesh Sundaram

Product Manager at Nanometrics Inc

SPIE Involvement:

Author

Publications (11)

Proceedings Article | 24 March 2006 Paper

Minimizing CD measurement bias through real-time acquisition of 3D feature shapes

Johann Foucher, Dmitry Gorelikov, Marc Poulingue, Pascal Fabre, Ganesh Sundaram

Proceedings Volume 6152, 61521A (2006) https://doi.org/10.1117/12.660233

KEYWORDS: Atomic force microscopy, Semiconducting wafers, Critical dimension metrology, Scanning electron microscopy, 3D metrology, 3D acquisition, Metrology, Silicon, Lithography, Electron beam lithography

Read Abstract +

Proceedings Article | 24 March 2006 Paper

Landing energy influence on CD-SEM measurement precision and accuracy

Anne-Lise Fabre, Johann Foucher, M. Poulingue, P. Fabre, Ganesh Sundaram

Proceedings Volume 6152, 61524J (2006) https://doi.org/10.1117/12.660267

KEYWORDS: Atomic force microscopy, Precision measurement, Critical dimension metrology, Semiconducting wafers, Lithography, Metrology, Scanning electron microscopy, Resolution enhancement technologies, Electron beams, Cadmium

Read Abstract +

Proceedings Article | 10 May 2005 Paper

Minimizing the impact of image icquisition on CD-SEM LER/LWR measurements

G. Sundaram, B.-H. Lee, T. Mai, N. Sullivan

Proceedings Volume 5752, (2005) https://doi.org/10.1117/12.601090

KEYWORDS: Line width roughness, Line edge roughness, Image acquisition, Monte Carlo methods, Image processing, Electronics, Photoresist processing, Optical simulations, Control systems, Polymers

Read Abstract +

Proceedings Article | 10 May 2005 Paper

The application of critical shape metrology toward CD-SEM measurement accuracy on sub-60nm features

J. Foucher, G. Sundaram, D. Gorelikov

Proceedings Volume 5752, (2005) https://doi.org/10.1117/12.601068

KEYWORDS: Scatterometry, Semiconducting wafers, Monte Carlo methods, Metrology, 3D metrology, Silicon, Critical dimension metrology, Optical simulations, Databases, Scanning electron microscopy

Read Abstract +

Proceedings Article | 24 May 2004 Paper

Low-impact resist metrology: the use of ultralow voltage for high-accuracy performance

Ganesh Sundaram, Neal Sullivan, Tung Mai, Chih-Ming Ke

Proceedings Volume 5375, (2004) https://doi.org/10.1117/12.539221

KEYWORDS: Semiconducting wafers, Metrology, Electrons, Line edge roughness, Critical dimension metrology, Monte Carlo methods, Optical proximity correction, Silicon, Scanning electron microscopy, Photoresist materials

Read Abstract +

Previous results have demonstrated that the most significant line slimming occurs during the initial measurement and is a strong function of landing energy. Since it is difficult to accurately estimate the initial CD value (M0), many test protocols rely on the measurement change between the first and second measurement pass (M1-M2), to evaluate line slimming. However, since the slimming behavior of ArF resist systems has been shown to be exponential and dependant upon the resist formulation, using M1-M2 as the metric for comparing between CD SEM suppliers can severely underestimate the impact of a particular system setup on line slimming. The experiments reported here represent an attempt to assess the impact of the initial measurement (M0-M1) on line slimming. A series of experiments were designed to assess the impact of landing energy on line slimming for ArF photoresist. To validate the results of the experiments, an etched poly wafer was used as a control sample to ensure that metrology differences noted on the ArF resist between a high voltage 800 eV and an Ultra-Low Voltage (ULV) 100 eV condition arose purely from the interaction of the E-beam with the resist. The most significant line slimming was observed to occur during the first measurement at 800 eV, with greater than 10 nm of slimming observed on a nominal 120nm lines), followed by relatively stable slimming performance thereafter. The 100 eV condition demonstrated a significantly reduced level of slimming as a result of the first measurement; if there was any slimming, it could not be distinguished from the uncertainty in the estimate of the initial CD (M0). Measurements were also performed dynamically and at the ULV 100 eV condition slimming was indistinguishable from contamination induced linewidth growth, leading to an initial value closely matching the unperturbed linewidth (M0). The superior ArF line slimming performance at ULV is consistent with numerous published results, and demonstrates the need to assess slimming by a meaningful metric through a comparison of the initial measurement (M1) at high and low voltages, or by a comparison of the initial measurement M1 with the unperturbed linewidth (M0). The results of the experiments conducted point to a need for Low Impact Resist Measurement performance, which is fulfilled by Ultra-Low Voltage Metrology.

Proceedings Article | 2 June 2003 Paper

Web-based metrology performance diagnostics

Ganesh Sundaram, Martin Mastovich, Roye Avidor, Jason Remillard, Robert Brandom

Proceedings Volume 5038, (2003) https://doi.org/10.1117/12.487603

KEYWORDS: Metrology, Databases, Data communications, Diagnostics, Process control, Computer security, Image quality, Scanning electron microscopy, Pattern recognition, Internet

Read Abstract +

Proceedings Article | 2 June 2003 Paper

Metrology of inkjet MEMS devices

Roger McKay, Susan Redmond, Ron Weller, Kuni Yamamoto, Ganesh Sundaram

Proceedings Volume 5038, (2003) https://doi.org/10.1117/12.487601

KEYWORDS: Semiconducting wafers, Metrology, Calibration, Microelectromechanical systems, Standards development, Manufacturing, Silicon, Process control, Optical alignment, Optical lithography

Read Abstract +

Proceedings Article | 16 July 2002 Paper

Productivity enhancements in recipe creation for overlay metrology measurements

Vincent Vachellerie, Delia Ristoiu, Alain Deleporte, Marc Poulingue, Yannick Bedin, Rolf Arendt, Ganesh Sundaram, Paul Knutrud

Proceedings Volume 4689, (2002) https://doi.org/10.1117/12.473492

KEYWORDS: Semiconducting wafers, Overlay metrology, Metrology, Time metrology, Optical alignment, Process control, Prototyping, Metals, Niobium, Semiconductors

Read Abstract +

Proceedings Article | 16 July 2002 Paper

Overlay metrology results on leading-edge Cu processes

Vincent Vachellerie, Delia Ristoiu, Alain Deleporte, Pierre-Olivier Sassoulas, Philippe Spinelli, Marc Poulingue, Pascal Fabre, Rolf Arendt, Ganesh Sundaram, Paul Knutrud

Proceedings Volume 4689, (2002) https://doi.org/10.1117/12.473461

KEYWORDS: Overlay metrology, Semiconducting wafers, Copper, Image processing, Metals, Precision measurement, Pattern recognition, Detection and tracking algorithms, Metrology, Optical alignment

Read Abstract +

Proceedings Article | 25 August 1999 Paper

Advancements in focused ion beam repair of MoSiON phase-shifting masks

Joshua Lessing, David Ferranti, Ganesh Sundaram, Ludwig Nagal, Martin Verbeek

Proceedings Volume 3748, (1999) https://doi.org/10.1117/12.360232

KEYWORDS: Photomasks, Opacity, Etching, Ion beams, Phase shifts, Quartz, Critical dimension metrology, Deep ultraviolet, Sputter deposition, Atomic force microscopy

Read Abstract +

Proceedings Article | 29 June 1998 Paper

Subresolution assist feature and off-axis illumination optimization for 200- and 240-nm contact windows using 248-nm lithography

Pat Watson, Raymond Cirelli, Allen Timko, Omkaram Nalamasu, Carl Lockstamphor, Steven Berger, Neil Bassom, Ganesh Sundaram

Proceedings Volume 3334, (1998) https://doi.org/10.1117/12.310743

KEYWORDS: Lithographic illumination, Photomasks, Optical proximity correction, Scanning electron microscopy, SRAF, Lithography, Mask making, Manufacturing, Photoresist processing, Optical calibration

Read Abstract +

Showing 5 of 11 publications

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Keywords/Phrases

Search In:

Publication Years