Mr. Garand T. Tyson Profile

Garand T. Tyson

SPIE Involvement:

Author

Publications (1)

This will count as one of your downloads.

You will have access to both the presentation and article (if available).

DOWNLOAD NOW

This content is available for download via your institution's subscription. To access this item, please sign in to your personal account.

Email or Username Forgot your username?

Password Forgot your password?

Show

Keep me signed in

No SPIE account? Create an account

Proceedings Article | 8 March 2019 Presentation

Tuning the epsilon-near-zero region of ultra-thin Al-doped ZnO through atomic layer deposition (Conference Presentation)

Garand Tyson, Sudip Gurung, Subhajit Bej, Aleksei Anopchenko, Howard Lee

Proceedings Volume 10919, 1091929 (2019) https://doi.org/10.1117/12.2508887

KEYWORDS: Atomic layer deposition, Zinc oxide, Dielectrics, Nanolithography, Fabrication, Chemical vapor deposition, Silica, Water, Spectroscopic ellipsometry, Refractive index

Read Abstract +

In this work, we report on the tunability of carrier concentration and epsilon-near-zero (ENZ) wavelength (i.e. the region where the real dielectric permittivity of a material approaches zero) in ultrathin (<100 nm) Al-doped ZnO (AZO) nano-layers fabricated through the atomic layer deposition (ALD) technique. ALD is a variation of chemical vapor deposition in which a substrate is exposed to only one self-limiting reactant at a time, allowing for ultra-smooth, conformal deposition and precise control over film-thickness at the nanometer scale. To create the AZO meta-films, fused silica substrates are exposed to alternating cycles of Diethylzinc (DEZ) and water vapor, with periodic dopant cycles of Trimethylaluminium (TMA). Optical and material properties of the meta-films are determined using spectroscopic ellipsometry. Using the Drude model and regression analysis with measured values, properties such as film thickness, ENZ wavelength, and complex refractive index are then determined. Furthermore, excitation of ENZ modes in the fabricated films has been demonstrated experimentally using the Kretschmann-Raether configuration. It was found that by varying the deposition temperature, Al:ZnO doping ratio, and film thickness, the ENZ wavelength of AZO thin films could be precisely tuned in the near infrared region from 1520 to 1700 nm. The results of this work allow for the precise engineering of optical properties of AZO films for zero-index photonic applications.

My Library

You currently do not have any folders to save your paper to! Create a new folder below.

Folder Name

Folder Description

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks. You are receiving this notice because your organization may not have SPIE eBooks access.*

*Shibboleth/Open Athens users─please sign in to access your institution's subscriptions.

To obtain this item, you may purchase the complete book in print or electronic format on SPIE.org.

ORGANIZATIONAL
Sign in with credentials provided by your organization.

Organizational Username

Organizational Password

Show/Hide Password

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members:

Non-members: ADD TO CART

Keywords/Phrases

Search In:

Publication Years