Dr. George Patrick Watson Profile

Dr. George Patrick Watson

at Nokia Bell Labs

SPIE Involvement:

Author

Publications (15)

Proceedings Article | 15 May 2007 Paper

Paper

Two-dimensional MEMS array for maskless lithography and wavefront modulation

D. López, V. Aksyuk, G. Watson, W. Mansfield, R. Cirelli, F. Klemens, F. Pardo, E. Ferry, J. Miner, T. Sorsch, M. Peabody, J. Bower, C. Pai, J. Gates

Proceedings Volume 6589, 65890S (2007) https://doi.org/10.1117/12.724467

KEYWORDS: Microelectromechanical systems, Mirrors, Spatial light modulators, Maskless lithography, Electrodes, Wavefronts, Modulation, Semiconducting wafers, Etching, Resistance

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Proceedings Article | 5 July 2000 Paper

Paper

High-density lithography using attenuated phase-shift mask and negative resist

Stanley Pau, Raymond Cirelli, Kevin Bolan, Allen Timko, John Frackoviak, Pat Watson, Lee Trimble, James Blatchford, Omkaram Nalamasu

Proceedings Volume 4000, (2000) https://doi.org/10.1117/12.389015

KEYWORDS: Photomasks, Photoresist materials, Phase shifts, Lithography, Binary data, Manufacturing, Critical dimension metrology, Printing, Microelectronics, Integrated circuits

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Proceedings Article | 23 June 2000 Paper

Paper

Modeling chemically amplified resists for 193-nm lithography

Ebo Croffie, Mosong Cheng, Andrew Neureuther, Francis Houlihan, Raymond Cirelli, James Sweeney, Gary Dabbagh, Pat Watson, Omkaram Nalamasu, Ilya Rushkin, Ognian Dimov, Allen Gabor

Proceedings Volume 3999, (2000) https://doi.org/10.1117/12.388300

KEYWORDS: Diffusion, Data modeling, FT-IR spectroscopy, Chemically amplified resists, Semiconducting wafers, Absorbance, Photolysis, Polymers, Lithography, Interfaces

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Proceedings Article | 26 July 1999 Paper

Paper

Effects of subresolution assist features on depth of focus and uniformity of contact windows for 193-nm lithography

Armen Kroyan, Pat Watson, Raymond Cirelli, Omkaram Nalamasu, Frank Tittel

Proceedings Volume 3679, (1999) https://doi.org/10.1117/12.354377

KEYWORDS: SRAF, Lithography, Lithographic illumination, Computer simulations, Optical proximity correction, Tolerancing, Scanning electron microscopy, Critical dimension metrology, Environmental sensing, Photomasks

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Proceedings Article | 26 July 1999 Paper

Paper

Depth of focus enhancement for 193-nm window lithography with subresolution assist features

Pat Watson, Armen Kroyan, Raymond Cirelli, H. Maynard, James Sweeney, Fred Klemens, G. Timp, Omkaram Nalamasu

Proceedings Volume 3679, (1999) https://doi.org/10.1117/12.354345

KEYWORDS: Etching, Lithography, Scanning electron microscopy, Oxides, Lithographic illumination, Critical dimension metrology, SRAF, Photoresist processing, Printing, Semiconducting wafers

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Proceedings Article | 11 June 1999 Paper

Paper

Toward the ultimate storage device: the fabrication of an ultrahigh-density memory device with 193-nm lithography

Raymond Cirelli, J. Bude, William Mansfield, G. Timp, Fred Klemens, Pat Watson, Gary Weber, James Sweeney, Francis Houlihan, Allen Gabor, Fred Baumann, M. Buonanno, G. Forsyth, D. Barr, T. Lee, C. Rafferty, Richard Hutton, Allen Timko, J. Hergenrother, Elsa Reichmanis, Lloyd Harriott, S. Hillenius, Omkaram Nalamasu

Proceedings Volume 3678, (1999) https://doi.org/10.1117/12.350213

KEYWORDS: Etching, Photomasks, Lithography, Diffusion, Semiconducting wafers, Phase shifts, 193nm lithography, Photoresist materials, Silicon, Chemically amplified resists

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Proceedings Article | 18 December 1998 Paper

Paper

Subresolution assist feature tolerences for contact windows using 193-nm lithography

Armen Kroyan, Pat Watson, Raymond Cirelli, Omkaram Nalamasu, Anthony Novembre, Frank Tittel

Proceedings Volume 3546, (1998) https://doi.org/10.1117/12.332873

KEYWORDS: SRAF, Lithography, Photoresist processing, Optical proximity correction, Critical dimension metrology, Scanning electron microscopy, Image processing, Lithographic illumination, Tolerancing, Reticles

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Combining assist features with appropriate off-axis illumination conditions can significantly improve depth of focus and uniformity of critical dimensions of contact windows. It is known that sub-resolution assist features modify the environment of isolated features in a fashion that they appear dense. In recent years the impact of assist features was mostly studied for gate-level lithography. In this paper the placement and dimension control of assist features for contact windows are examined and analyzed using 193 nm lithography in conjunction with a state-of-the-art single layer resist. Our study is primarily done for 160 nm contact windows, and it is based on experimental data obtained from critical dimension measurements with varying focus, exposure dose, and in different environments. Along with optical proximity corrections we use off-axis illumination technique which increases depth of focus of contact windows and improves the overall process latitude. Specifically for this study we have designed a test photomask with different geometries and pattern densities of contact windows with and without assist features to be used at 193 nm wavelength. To study the proximity effects, different sizes of assist features were used as well as the distances of assists from the main feature were varied. The results have shown that while increasing the process latitude for the primary feature using assist slots in combination with off-axis illumination, the resist thickness and contrast are limiting the assist feature dimensions that can be used. Assist features appear to significantly increase critical dimension uniformity of the contact windows when using both conventional and off-axis illumination techniques, and they dramatically increase the common exposure dose latitude for contact windows with densities from near-isolated to dense, decreasing the proximity effects. Assist feature technique combined with quadrupole illumination demonstrates about 0.3 micron improvement in depth of focus for every type contact window pattern used.

Proceedings Article | 29 June 1998 Paper

Paper

Subresolution assist feature and off-axis illumination optimization for 200- and 240-nm contact windows using 248-nm lithography

Pat Watson, Raymond Cirelli, Allen Timko, Omkaram Nalamasu, Carl Lockstamphor, Steven Berger, Neil Bassom, Ganesh Sundaram

Proceedings Volume 3334, (1998) https://doi.org/10.1117/12.310743

KEYWORDS: Lithographic illumination, Photomasks, Optical proximity correction, Scanning electron microscopy, SRAF, Lithography, Mask making, Manufacturing, Photoresist processing, Optical calibration

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Proceedings Article | 29 June 1998 Paper

Paper

New variable-transmission illumination technique optimized with design rule criteria

Raymond Cirelli, Masis Mkrtchyan, Pat Watson, Lee Trimble, Gary Weber, David Windt, Omkaram Nalamasu

Proceedings Volume 3334, (1998) https://doi.org/10.1117/12.310739

KEYWORDS: Lithographic illumination, Carbon, Photomasks, Fiber optic illuminators, Lithography, Quartz, Diffraction, Transmittance, Tolerancing, Software development

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Proceedings Article | 7 July 1997 Paper

Paper

Control and uniformity of 280-nm features in i-line lithography using optical proximity corrections and off-axis illumination

Pat Watson, Joseph Garofalo, M. Hansen, Ilya Grodnensky, Ludwik Zych, R. Takahashi, Willie Yarbrough, Edward Ehrlacher, A. Reim, R. Vella, A. Dunbar, Albert Colina, B. Herrero, D. Castro

Proceedings Volume 3051, (1997) https://doi.org/10.1117/12.275997

KEYWORDS: Lithographic illumination, Lithography, Optical proximity correction, Critical dimension metrology, Manufacturing, SRAF, Reticles, Photomasks, Matrices

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Proceedings Article | 7 July 1997 Paper

Paper

SCALPEL proof-of-concept system: preliminary lithography results

Warren Waskiewicz, Christopher Biddick, Myrtle Blakey, Kevin Brady, Ron Camarda, Wayne Connelly, A. Crorken, J. Custy, R. DeMarco, Reginald Farrow, Joseph Felker, Linus Fetter, Richard Freeman, Lloyd Harriott, Leslie Hopkins, Harold Huggins, Richard Kasica, Chester Knurek, Joseph Kraus, James Liddle, Masis Mkrtchyan, Anthony Novembre, Milton Peabody, Len Rutberg, Harry Wade, Pat Watson, Kurt Werder, David Windt, Regine Tarascon-Auriol, Steven Berger, Stephen Bowler

Proceedings Volume 3048, (1997) https://doi.org/10.1117/12.275786

KEYWORDS: Photomasks, Charged-particle lithography, Lithography, Printing, Semiconducting wafers, Etching, Silicon, Scanning electron microscopy, Photomicroscopy, Backscatter

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Proceedings Article | 27 December 1996 Paper

Paper

Lithography tricks and tribulations

Joseph Garofalo, Pat Watson, Lee Trimble, Raymond Cirelli, Albert Colina, Ilya Grodnensky, B. Herrero, A. Dunbar, Frederick Peiffer, R. Takahashi, Regine Tarascon-Auriol, Willie Yarbrough, Ludwik Zych

Proceedings Volume 2884, (1996) https://doi.org/10.1117/12.262814

KEYWORDS: Photomasks, Optical proximity correction, Deep ultraviolet, Lithography, Resolution enhancement technologies, Semiconducting wafers, Binary data, Mask making, Process modeling, Optical lithography

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Proceedings Article | 7 December 1994 Paper

Paper

SCALPEL system

Steven Berger, Christopher Biddick, Myrtle Blakey, Kevin Bolan, Stephen Bowler, Kevin Brady, Ron Camarda, Wayne Connelly, Reginald Farrow, Joseph Felker, Linus Fetter, Lloyd Harriott, Harold Huggins, Joseph Kraus, James Liddle, Masis Mkrtchyan, Anthony Novembre, Milton Peabody, Thomas Russell, Wayne Simpson, Regine Tarascon-Auriol, Harry Wade, Warren Waskiewicz, Pat Watson

Proceedings Volume 2322, (1994) https://doi.org/10.1117/12.195843

KEYWORDS: Charged-particle lithography, Photomasks, Semiconducting wafers, Electron beam lithography, Photomask technology, Charged particle optics, Wafer-level optics, Electron beams, Scattering, Lithography

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Proceedings Article | 7 December 1994 Paper

Paper

SCALPEL masks

James Liddle, Myrtle Blakey, Kevin Bolan, Reginald Farrow, Linus Fetter, Leslie Hopkins, Harold Huggins, Herschel Marchman, Milton Peabody, Wayne Simpson, Regine Tarascon-Auriol, Pat Watson

Proceedings Volume 2322, (1994) https://doi.org/10.1117/12.195844

KEYWORDS: Photomasks, Charged-particle lithography, Lithography, Failure analysis, Photomask technology, Metrology, Silicon, Inspection, X-rays, Scattering

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Proceedings Article | 16 March 1993 Paper

Paper

GeSi infrared photodetectors grown by rapid thermal CVD

Bahram Jalali, Luis Naval, Anthony Levi, Pat Watson

Proceedings Volume 1804, (1993) https://doi.org/10.1117/12.142080

KEYWORDS: Silicon, Waveguides, Sensors, External quantum efficiency, Germanium, Superlattices, Receivers, Absorption, Chemical vapor deposition, Thermography

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Showing 5 of 15 publications

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