Nickel oxide (NiO) film was formed on the SiO2/Si substrate at the room temperature with water cooling system by
reactive RF sputter. The feasibility of bolometric material was investigated, and a microbolometer using the NiO film
was fabricated and evaluated. The NiO films were analyzed by using grazing-incidence X-ray diffraction (GIXRD). The
NiO(111), NiO (200), and NiO (220) peaks expected as the main spectrum were dominantly appeared on the
polycrystalline NiO films. The representative resistivity acquired at the O2/(Ar+O2) ratio of 10% sample was about
40.6 Ωcm. The resistivity of 40.6 Ωcm obtained in low oxygen partial pressure was inclined to reduce to 18.65 Ωcm
according to the increase of the O2/(Ar+O2) ratio. The TCR value of fabricated microbolometer was −1.67%/℃ at the
NiO film resistivity of 40.6 Ωcm. The characteristics of fabricated NiO film and microbolometer were demonstrated by
XRD patterns, TCR value, and SEM image.
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