Mr. Hansuek Lee Profile

Hansuek Lee

at Seoul National Univ

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Proceedings Article | 6 October 2006 Paper

Amplification characteristics of nanocluster-Si sensitized Er-doped waveguide amplifier using top-pumped blue-green LED

Hansuek Lee, Jung Shin, Namkyoo Park

Proceedings Volume 6352, 63522R (2006) https://doi.org/10.1117/12.691623

KEYWORDS: Waveguides, Erbium, Light emitting diodes, Mirrors, Optical amplifiers, Absorption, Ions, Interference (communication), Wave propagation, Doping

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In this paper, we provide a detailed performance analysis of an nc-Si EDWA for the real application. Optical gain (small signal / saturation regime), noise figure and required pump density has been assessed in terms of the device structure. Results show a high feasibility of achieving 10dBm output power with 0dBm of input signal, using an array of commercially available high-power blue-green LEDs as the top pump. In numerical model section, we suggest simplified coupled rate equation and 2-D propagation equation constructed to investigate amplifier performance. In performance analysis section, firstly, we compared population inversion characteristics for Er with/without nc-Si condition to confirm the widening of high inversion region by introducing nc-Si sensitizer, which means less pump intensity requirement for same input signal power. In addition, to test the feasibility of the NC-EDWA for the metro-network applications, we simulated the amplifier performance for varying the width of amplifier region. With 50x7μm² active core and bottom mirror, only 15.8 W/cm² (8.8 W/cm² for 100μm width) of pump intensity was sufficient to meet the target operating condition. We also compare the inversion distributions of NC-Si EDWA, for the 4 types of EDWA structures under investigation (straight without/with mirror, adiabatic without/with mirror). As another key performance factor, we also calculated noise figures for different NC-Si EDWA structures.

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