Mr. Heeyoung Go Profile

Heeyoung Go

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Proceedings Article | 12 February 2008 Paper

ErxY2-xSiO5 nanocrystal and thin film for high gain per length material

Kiseok Suh, Heeyoung Go, Shin-Young Lee, Jee Soo Chang, Moon-Seung Yang, Jung Shin

Proceedings Volume 6897, 68970G (2008) https://doi.org/10.1117/12.764400

KEYWORDS: Erbium, Nanocrystals, Thin films, Silicon, Crystals, Upconversion, Luminescence, Annealing, Ions, Nanolithography

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We report on fabricating Er_xY_2-xSiO₅ nanocrystals using ErCl₃•6H₂O and YCl₃•6H₂O solutions and Si nanowires grown by VSL method. Use of crystalline host allows incorporation of up to 25 at % Er without clustering and loss of optical activity, and use of Y enables continuous mixing of Er and Y for controlling cooperative upconversion. We obtain a cooperative upconversion coefficients of (2.2±1.1)×10^-18 cm³/s and (5.4±2.7)×10^-18 cm³/s at an Er concentration of 1.2×10²¹ cm^-3 and 2.0×10²¹ cm^-3, respectively. These values are up to 10 times lower at 10 times higher Er concentration than those reported for Er-doped silica, and shows that up to 69 dB/cm gain could be achieved for ultra-compact optical amplification. Also, we report on the deposition of Er_xY_2-xSiO₅ thin film on Si substrate using ion beam sputter deposition. Rapid thermal annealing at 1100°C is enough to form crystal phase the film and activate most of Er³⁺ ions.

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