Prof. Hiroshi Amano Profile

Prof. Hiroshi Amano

at Nagoya Univ

SPIE Involvement:

Conference Program Committee | Author

Publications (43)

Proceedings Article | 10 April 2024 Poster + Paper

SEM imaging of high aspect ratio trench by selectively controlling the electron beam irradiation using photocathode

Yuta Arakawa, Kotaro Niimi, Yohei Otsuka, Daiki Sato, Atsushi Koizumi, Haruka Shikano, Hokuto Iijima, Tomohiro Nishitani, Yoshio Honda, Hiroshi Amano

Proceedings Volume 12955, 1295534 (2024) https://doi.org/10.1117/12.3010733

KEYWORDS: Scanning electron microscopy, Electron beams, Feedback control, Signal detection, Semiconductors, Metrology, Scanning

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Proceedings Article | 10 April 2024 Poster + Paper

Photoelectron beam from semiconductor photocathodes leading to new inspection technologies

T. Nishitani, Y. Arakawa, K. Niimi, Y. Otsuka, D. Sato, A. Koizumi, H. Shikano, H. Iijima, Y. Honda, H. Amano

Proceedings Volume 12955, 1295533 (2024) https://doi.org/10.1117/12.3010730

KEYWORDS: Electron beams, Semiconductors, Scanning electron microscopy, Transmission electron microscopy, Laser irradiation, Semiconductor materials, Group III-V semiconductors, Electron microscopes, Vacuum

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Proceedings Article | 10 April 2024 Poster + Paper

Local voltage contrast changes in MOSFET using scanning electron microscopy with photoelectron beam technology

Daiki Sato, Yuta Arakawa, Kotaro Niimi, Keika Fukuroi, Yutaro Tajiri, Atsushi Koizumi, Haruka Shikano, Hokuto Iijima, Tomohiro Nishitani, Yoshio Honda, Hiroshi Amano

Proceedings Volume 12955, 1295529 (2024) https://doi.org/10.1117/12.3009947

KEYWORDS: Scanning electron microscopy, Electron beams, Field effect transistors, Transistors, Metrology, Inspection, Electrical conductivity

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Proceedings Article | 9 March 2024 Presentation

Laser slicing of GaN

Atsushi Tanaka, Toshiki Yui, Tomomi Aratani, Keisuke Hara, Hirotaka Watanabe, Yoshio Honda, Akio Wakejima, Yuji Ando, Hiroshi Amano

Proceedings Volume PC12886, PC1288602 (2024) https://doi.org/10.1117/12.3004144

KEYWORDS: Gallium nitride, Laser induced damage, Field effect transistors, Fabrication, Contamination

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Proceedings Article | 26 September 2023 Presentation

Current-injected continuous-wave AlGaN-based UVC laser diodes

Maki Kushimoto, Ziyi Zhang, Akira Yoshikawa, Koji Aoto, Yoshio Honda, Leo Schowalter, Chiaki Sasaoka, Hiroshi Amano

Proceedings Volume PC12421, (2023) https://doi.org/10.1117/12.2650922

KEYWORDS: Semiconductor lasers, Continuous wave operation, Cladding, Waveguides, Resistance, Refractive index, Aluminum, Quantum wells, Optical design, Active optics

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Proceedings Article | 27 April 2023 Poster + Paper

Photoelectron beam technology for SEM imaging with pixel-specific control of irradiation beam current

T. Nishitani, Y. Arakawa, S. Noda, A. Koizumi, D. Sato, H. Shikano, H. Iijima, Y. Honda, H. Amano

Proceedings Volume 12496, 124962N (2023) https://doi.org/10.1117/12.2657853

KEYWORDS: Scanning electron microscopy, Electron beams, Semiconductors, Electrodes, Laser irradiation, Imaging systems, Modulation, Control systems, Beam controllers, Semiconductor lasers

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Proceedings Article | 27 April 2023 Poster + Paper

Novel electron beam technology using InGaN photocathode for high-throughput scanning electron microscope imaging

Daiki Sato, Atsushi Koizumi, Haruka Shikano, Shotaro Noda, Yohei Otsuka, Daisuke Yasufuku, Kazumasa Mori, Hokuto Iijima, Tomohiro Nishitani, Yoshio Honda, Hiroshi Amano

Proceedings Volume 12496, 1249629 (2023) https://doi.org/10.1117/12.2657032

KEYWORDS: Electron beams, Quantum efficiency, Scanning electron microscopy, Indium gallium nitride, Semiconductors

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Proceedings Article | 14 March 2023 Presentation + Paper

Challenges and opportunities of nitride light emitting devices by HVPE thanks to a stable Mg source

Koh Matsumoto, Kazuki Ohnishi, Hiroshi Amano

Proceedings Volume 12441, 1244104 (2023) https://doi.org/10.1117/12.2647336

KEYWORDS: Gallium nitride, Indium gallium nitride, Magnesium, Light emitting diodes, Doping, Design and modelling, Indium, Gallium arsenide, Gallium, Temperature metrology

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Proceedings Article | 14 March 2023 Presentation + Paper

Development in AlGaN homojunction tunnel junction deep UV LEDs

Kengo Nagata, Satoshi Anada, Yoshiki Saito, Maki Kushimoto, Yoshio Honda, Tetsuya Takeuchi, Hiroshi Amano

Proceedings Volume 12441, 1244105 (2023) https://doi.org/10.1117/12.2646757

KEYWORDS: Aluminum gallium nitride, Light emitting diodes, Deep ultraviolet, Aluminum, Silicon, Magnesium, Gallium nitride, Doping, Dopants, Anodes

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Proceedings Article | 5 March 2022 Presentation + Paper

Frontier electronics in memory of Professor Isamu Akasaki

Hiroshi Amano

Proceedings Volume 12001, 1200102 (2022) https://doi.org/10.1117/12.2619005

KEYWORDS: Gallium nitride, Crystals, Blue light emitting diodes, Electronics, Light emitting diodes, Gallium arsenide, Aluminum nitride, Semiconductors, Germanium, Luminescence

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Proceedings Article | 5 March 2022 Presentation

Emission uniformity of UVC laser diodes on AlN substrates

Maki Kushimoto, Ziyi Zhang, Yoshio Honda, Leo Schowalter, Chiaki Sasaoka, Hiroshi Amano

Proceedings Volume PC12001, PC120010L (2022) https://doi.org/10.1117/12.2604370

KEYWORDS: Semiconductor lasers, Aluminum nitride, Heat treatments, Deep ultraviolet, Crystals, Polarization, Laser crystals, Doping

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Proceedings Article | 5 March 2021 Presentation + Paper

Development of UV-C laser diodes on AlN substrate

Maki Kushimoto, Zhang Ziyi, Naoharu Sugiyama, Yoshio Honda, Leo Schowalter, Chiaki Sasaoka, Hiroshi Amano

Proceedings Volume 11686, 116860P (2021) https://doi.org/10.1117/12.2575872

KEYWORDS: Semiconductor lasers, Mirrors, Wet etching, Semiconductors, Semiconducting wafers, Polarization, Fabrication, Electrodes, Dry etching, Doping

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Proceedings Article | 5 March 2021 Presentation

Detection and classification of dislocations in GaN by optical microscope using birefringence

Atsushi Tanaka, Shunta Harada, Kenji Hanada, Yoshio Honda, Toru Ujihara, Hiroshi Amano

Proceedings Volume 11706, 117060Y (2021) https://doi.org/10.1117/12.2577164

KEYWORDS: Gallium nitride, Birefringence, Optical microscopes, Microscopes, X-rays, Crystals, X-ray imaging, Etching, Crystallography

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Recently, quality of free-standing gallium nitride (GaN) substrate has been improved. For example, single crystal GaN substrate with threading dislocation density (TDD) of 104 cm-2 is available. Meanwhile, there is a progress in observation method of dislocation in GaN. In addition to conventional etch pits method, X-ray topography, and CL observation, recently, multiphoton PL microscope which can observe dislocation three-dimensionally is actively being carried out. However, these methods are not simple observation because these are destructive observation or require a lot of labor and time. In this study, we attempted crystal evaluation of GaN with a newly developed birefringence microscope, which can be used with the same convenience as the conventional optical microscope. GaN is a material having birefringence, so that strain around dislocation can be seen with birefringence microscope as retardation[1]. Therefore, we tried observing commercially available GaN substrate with TDD of 106, 105, 104 cm-2. As results, an useless random contrast image was obtained with the substrate with TDD of 106 cm-2. With the substrate with TDD of 105 cm-2, distinctive contrasts that seem to coincide with the dislocation cores were obtained, but it was an unclear image. On the other hand, with the substrate with TDD of 104 cm-2, we could obtain contrasts that seems to be independent dislocation cores and surrounding strain field. It seems that the strain field of each dislocation overlapped because the distance between dislocations was too close in substrate with TDD of 106 and 105 cm-2. For the substrate with TDD of 104 cm-2, comparison with the X-ray topography image taken at BL8S2 of Aichi SR was carried out, and it was confirmed that the dislocation was exist at the position of the contrast in the image taken by birefringence microscope. However, we also found that there is no contrast at some dislocation positions. This is considered to be caused by that no strain occurs in the planar direction when the threading dislocation is pure screw dislocation. In some of the dislocations, butterfly type contrast which is theoretically expected to appear around edge dislocation was observed. We consider that this novel birefringent method is very useful method to discriminate edge component and its direction of Burgers vector, and also to discriminate screw dislocation in combination with other methods.

Proceedings Article | 5 March 2021 Presentation + Paper

Decrease in the injection efficiency and generation of midgap states in UV-C LEDs: a model based on rate equations

F. Piva, C. De Santi, M. Buffolo, M. Deki, M. Kushimoto, H. Amano, H. Tomozawa, N. Shibata, G. Meneghesso, E. Zanoni, M. Meneghini

Proceedings Volume 11686, 1168611 (2021) https://doi.org/10.1117/12.2578134

KEYWORDS: Light emitting diodes, Ultraviolet radiation, Ultraviolet light emitting diodes, Optical testing, Medical device development, Light sources and illumination, Gallium

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Proceedings Article | 16 February 2020 Paper

Role of defects in the mid-term degradation of UV-B LEDs investigated by optical and DLTS measurements

F. Piva, C. De Santi, M. Deki, M. Kushimoto, H. Amano, H. Tomozawa, N. Shibata, G. Meneghesso, E. Zanoni, M. Meneghini

Proceedings Volume 11280, 1128015 (2020) https://doi.org/10.1117/12.2544704

KEYWORDS: Light emitting diodes, UV optics, Optical testing, Ultraviolet light emitting diodes, Magnesium, Internal quantum efficiency, Ultraviolet radiation

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Proceedings Article | 5 March 2019 Presentation

Investigation of Mg and Si doping at different temperature for multi-color micro-LEDs with tunnel junctions (Conference Presentation)

Yoann Robin, Quentin Bournet, Markus Pristovsek, Yamina Andre, Hiroshi Amano

Proceedings Volume 10918, 109181U (2019) https://doi.org/10.1117/12.2506959

KEYWORDS: Magnesium, Silicon, Doping, Optical properties, Plasma etching, Interfaces, Gallium nitride

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Proceedings Article | 15 September 2016 Presentation + Paper

Development of AlGaN-based deep-ultraviolet (DUV) LEDs focusing on the fluorine resin encapsulation and the prospect of the practical applications

Akira Hirano, Yosuke Nagasawa, Masamichi Ippommatsu, Ko Aosaki, Yoshio Honda, Hiroshi Amano, Isamu Akasaki

Proceedings Volume 9926, 99260C (2016) https://doi.org/10.1117/12.2235398

KEYWORDS: Ultraviolet radiation, Deep ultraviolet, Light emitting diodes, External quantum efficiency, Fluorine, Sapphire, Ultraviolet radiation, Deep ultraviolet, Silicon, Aluminum nitride, Polymers, Mercury

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Proceedings Article | 13 March 2015 Paper

Photocathode electron beam sources using GaN and InGaN with NEA surface

T. Nishitani, T. Maekawa, M. Tabuchi, T. Meguro, Y. Honda, H. Amano

Proceedings Volume 9363, 93630T (2015) https://doi.org/10.1117/12.2076681

KEYWORDS: Indium gallium nitride, Gallium arsenide, Quantum efficiency, Gallium nitride, P-type semiconductors, Semiconductors, Cesium, Electron beams, Adsorption, Protactinium

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Proceedings Article | 27 February 2014 Paper

Reduction of efficiency droop in InGaN light-emitting diodes on low dislocation density GaN substrate

Kouhei Yamashita, Tomohiko Sugiyama, Makoto Iwai, Yoshio Honda, Takashi Yoshino, Hiroshi Amano

Proceedings Volume 9003, 90030E (2014) https://doi.org/10.1117/12.2038764

KEYWORDS: Gallium nitride, Light emitting diodes, Indium gallium nitride, Sapphire, Stereolithography, Internal quantum efficiency, Blue light emitting diodes, Epitaxy, Superlattices, Quantum efficiency

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Proceedings Article | 27 March 2013 Paper

Defects generation and annihilation in GaN grown on patterned silicon substrate

N. Sawaki, S. Ito, T. Nakagita, H. Iwata, T. Tanikawa, M. Irie, Y. Honda, M. Yamaguchi, H. Amano

Proceedings Volume 8625, 86250K (2013) https://doi.org/10.1117/12.2002738

KEYWORDS: Gallium nitride, Crystals, Silicon, Aluminum nitride, Transmission electron microscopy, Interfaces, Silica, Quantum efficiency, Sapphire, Point spread functions

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Proceedings Article | 28 February 2012 Paper

The effect of exciton dimensionality on resonance energy transfer: advances for organic color converters in hybrid inorganic/organic LEDs

Jan Junis Rindermann, Galia Pozina, Bo Monemar, Lars Hultman, Hiroshi Amano, Pavlos Lagoudakis

Proceedings Volume 8255, 82550I (2012) https://doi.org/10.1117/12.908339

KEYWORDS: Excitons, Resolution enhancement technologies, Quantum wells, Resonance energy transfer, Light emitting diodes, Energy transfer, Energy efficiency, Quantum efficiency, Gallium nitride, Absorption

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Proceedings Article | 28 February 2012 Paper

A local vibration mode in a carbon doped (1-101)AlGaN

N. Sawaki, K. Hagiwara, K. Yamashita, N. Koide, Y. Honda, M. Yamaguchi, H. Amano

Proceedings Volume 8262, 82620D (2012) https://doi.org/10.1117/12.905529

KEYWORDS: Carbon, Gallium nitride, Doping, Aluminum nitride, Silicon, FT-IR spectroscopy, Aluminum, Magnesium, Phonons, Absorption

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Proceedings Article | 28 February 2012 Paper

Concentrating properties of nitride-based solar cells using GaInN/GaInN superlattices

M. Mori, S. Yamamoto, Y. Kuwahara, T. Fujii, T. Sugiyama, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, H. Amano

Proceedings Volume 8262, 82620Z (2012) https://doi.org/10.1117/12.908226

KEYWORDS: Sun, Solar cells, Superlattices, Remote sensing, Gallium nitride, Crystals, Silicon, Resistance, Measurement devices, Indium nitride

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Proceedings Article | 17 March 2010 Paper

Reduction in operating voltage of UV laser diode

Tomoki Ichikawa, Kenichiro Takeda, Yuji Ogiso, Kengo Nagata, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki, Harumasa Yoshida, Masakazu Kuwabara, Yoji Yamashita, Hirofumi Kan

Proceedings Volume 7602, 760223 (2010) https://doi.org/10.1117/12.843910

KEYWORDS: Ultraviolet radiation, Annealing, Resistance, Electrodes, Semiconductor lasers, Sapphire, Aluminum nitride, Gallium nitride, Reactive ion etching, Optical lithography

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Proceedings Article | 12 March 2010 Paper

Enhancement of light extraction efficiency of blue-light-emitting diodes by moth-eye structure

T. Kondo, A. Suzuki, F. Teramae, T. Kitano, Y. Kaneko, R. Kawai, K. Teshima, S. Maeda, S. Kamiyama, M. Iwaya, H. Amano, I. Akasaki

Proceedings Volume 7602, 76021M (2010) https://doi.org/10.1117/12.841518

KEYWORDS: Antireflective coatings, Light emitting diodes, Blue light emitting diodes, Sapphire, Silicon carbide, Charged-particle lithography, Reflection, Electron beam lithography, Interfaces, External quantum efficiency

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Proceedings Article | 12 February 2010 Paper

Increased pressure digital metalorganic vapor phase epitaxy system with high-speed switching valves for growing high-In-content GaInN

Hiroshi Amano, Kensuke Nagata, Kentaro Nagamatsu, Daisuke Iida, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki

Proceedings Volume 7617, 761702 (2010) https://doi.org/10.1117/12.848616

KEYWORDS: Switching, Focus stacking software, Vapor phase epitaxy, Light emitting diodes, Thermodynamics, Solids, External quantum efficiency, Epitaxy, Gallium nitride, Blue light emitting diodes

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Proceedings Article | 17 February 2009 Paper

Fabrication technique for moth-eye structure using low-energy electron-beam projection lithography for high-performance blue-light-emitting diode on SiC substrate

T. Seko, S. Mabuchi, F. Teramae, A. Suzuki, Y. Kaneko, R. Kawai, S. Kamiyama, M. Iwaya, H. Amano, I. Akasaki

Proceedings Volume 7216, 721628 (2009) https://doi.org/10.1117/12.811348

KEYWORDS: Antireflective coatings, Light emitting diodes, Silicon carbide, Fabrication, Projection lithography, Blue light emitting diodes, Electron beam lithography, Photomasks, Transparency, Charged-particle lithography

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Proceedings Article | 17 February 2009 Paper

Growth and conductivity control of high quality AlGaN and its application to high-performance ultraviolet laser diodes

H, Amano, K. Nagamatsu, K. Takeda, T. Mori, H. Tsuzuki, M. Iwaya, S. Kamiyama, I. Akasaki

Proceedings Volume 7216, 72161B (2009) https://doi.org/10.1117/12.808381

KEYWORDS: Aluminum nitride, Ultraviolet radiation, Magnesium, Mirrors, Gallium nitride, Dielectrics, Dielectric mirrors, Sapphire, Multilayers, Semiconductor lasers

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Proceedings Article | 3 February 2009 Paper

Effect of UV irradiation on the apoptosis and necrosis of Jurkat cells using UV LEDs

Shunko Inada, Hiroshi Amano, Isamu Akasaki, Akimichi Morita, Keiko Kobayashi

Proceedings Volume 7231, 72310J (2009) https://doi.org/10.1117/12.809929

KEYWORDS: Ultraviolet light emitting diodes, Ultraviolet radiation, Lamps, Light sources, Cell death, Phototherapy, Skin, Light emitting diodes, Light, Sensors

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Proceedings Article | 28 February 2008 Paper

Photoluminescence study of near-surface GaN/AlN superlattices

P. Paskov, B. Monemar, T. Paskova, S. Kamiyama, H. Amano, I. Akasaki

Proceedings Volume 6894, 68940G (2008) https://doi.org/10.1117/12.759452

KEYWORDS: Stereolithography, Laser sintering, Gallium nitride, Aluminum nitride, Interfaces, Superlattices, Luminescence, Metalorganic chemical vapor deposition, Quantum wells, Field effect transistors

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Proceedings Article | 22 February 2008 Paper

Thick InGaN growth on several crystal planes of ZnO substrate by metalorganic vapor phase epitaxy

Y. Kawai, S. Ohsuka, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki

Proceedings Volume 6889, 688904 (2008) https://doi.org/10.1117/12.784113

KEYWORDS: Zinc oxide, Indium gallium nitride, Atomic force microscopy, Crystals, Vapor phase epitaxy, Temperature metrology, Annealing, Indium, Gallium nitride, Sapphire

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Proceedings Article | 6 February 2007 Paper

Characterization of low-defect-density a-plane and m-plane GaN and fabrication of a-plane and m-plane LEDs

T. Kawashima, T. Nagai, D. Iida, A. Miura, Y. Okadome, Y. Tsuchiya, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki

Proceedings Volume 6468, 64680S (2007) https://doi.org/10.1117/12.717182

KEYWORDS: Gallium nitride, Light emitting diodes, Sapphire, Epitaxial lateral overgrowth, Silicon carbide, Aluminum nitride, Scanning electron microscopy, Transmission electron microscopy, Fabrication, Surface roughness

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Proceedings Article | 6 February 2007 Paper

Comparison of the simulation and experiments of the nitride-based UV light emitting diodes

K. Iida, H. Watanabe, K. Takeda, T. Nagai, T. Sumii, K. Nagamatsu, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, A. Bandoh

Proceedings Volume 6468, 64680R (2007) https://doi.org/10.1117/12.717174

KEYWORDS: Gallium, Aluminum nitride, Aluminum, Gallium nitride, Epitaxial lateral overgrowth, Light emitting diodes, Ultraviolet light emitting diodes, Computer simulations, Ultraviolet radiation, Sapphire

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Proceedings Article | 28 February 2006 Paper

Simulation and fabrication of nitride-based moth-eye light-emitting diodes

M. Nakashima, H. Kasugai, A. Deguchi, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki

Proceedings Volume 6115, 61151Y (2006) https://doi.org/10.1117/12.661181

KEYWORDS: Eye, Light emitting diodes, Silicon carbide, Lithography, Electron beam lithography, Antireflective coatings, Laser applications, External quantum efficiency, Device simulation, LED lighting

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Proceedings Article | 28 April 2005 Paper

Physics and simulation of group-III-nitride-based moth-eye LEDs

M. Iwaya, H. Kasugai, T. Kawashima, K. Iida, A. Honshio, Y. Miyake, S. Kamiyama, H. Amano, I. Akasaki

Proceedings Volume 5722, (2005) https://doi.org/10.1117/12.601959

KEYWORDS: Antireflective coatings, Light emitting diodes, Silicon carbide, Internal quantum efficiency, Blue light emitting diodes, Quantum efficiency, Transmittance, Physics, Crystals, Gallium

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Proceedings Article | 1 April 2005 Paper

Fabrication of UV devices on various plane substrates

Motoaki Iwaya, Takeshi Kawashima, Kazuyoshi Iida, Akira Honshio, Yasuto Miyake, Hideki Kasugai, Krishnan Balakrishnan, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki

Proceedings Volume 5738, (2005) https://doi.org/10.1117/12.597124

KEYWORDS: Gallium, Crystals, Gallium nitride, Aluminum nitride, Sapphire, Ultraviolet radiation, Light emitting diodes, Aluminum, Cladding, Luminous efficacy

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Proceedings Article | 25 July 2003 Paper

Growth and fabrication of nitride-based LED on metallic substrate for application to high-power device and flexible display

Hiroshi Amano, Motoaki Iwaya, Shugo Nitta, Y. Tomida, K. Iida, T. Kawashima, S. Fukui, Satoshi Kamiyama, Isamu Akasaki, H. Kinoshita, T. Matsuda, S. Otani

Proceedings Volume 4986, (2003) https://doi.org/10.1117/12.483614

KEYWORDS: Gallium nitride, Light emitting diodes, Sapphire, Flexible displays, LED displays, Gallium, Thin films, Aluminum nitride, Glasses, Diodes

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Proceedings Article | 11 June 2003 Paper

Optical properties of InGaN/GaN and AlGaN/GaN multiple quantum well structures

Bo Monemar, Plamen Paskov, H. Haratizadeh, Galina Pozina, J. Bergman, Satoshi Kamiyama, Motoaki Iwaya, Hiroshi Amano, Isamu Akasaki

Proceedings Volume 5023, (2003) https://doi.org/10.1117/12.511285

KEYWORDS: Quantum wells, Electroluminescence, Gallium nitride, Silicon, Doping, Luminescence, Optical properties, Excitons, Interfaces, Polarization

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Proceedings Article | 9 July 2001 Paper

Transverse-mode control in GaN-based laser diodes

Hiroshi Amano, Satoshi Kamiyama, T. Detchprohm, Toshiyuki Sato, Motoaki Iwaya, Shugo Nitta, Shinji Terao, Isamu Akasaki

Proceedings Volume 4283, (2001) https://doi.org/10.1117/12.432610

KEYWORDS: Refractive index, Cladding, Semiconductor lasers, Gallium nitride, Waveguides, Sapphire, Crystals, Beam controllers, Control systems, Electrodes

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Proceedings Article | 17 April 2000 Paper

Gain switching of GaInN MQW laser diodes

Claudio Marinelli, Igor Khrushchev, Judy Rorison, Richard Penty, Ian White, T. Takeuchi, Hiroshi Amano, Isamu Akasaki, Y. Kaneko, Satoshi Watanabe, Norihide Yamada, Ghulam Hasnain, Richard Schneider, Shih-Yuan Wang, Michael Tan

Proceedings Volume 3938, (2000) https://doi.org/10.1117/12.382817

KEYWORDS: Semiconductor lasers, Ocean optics, Pulsed laser operation, Picosecond phenomena, Quantum wells, Gain switching, Singular optics, Cladding, Signal detection, Quantum efficiency

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Proceedings Article | 13 April 2000 Paper

Detailed feasibility study on a flame detector using AlGaN photosensors

Akira Hirano, C. Pernot, Motoaki Iwaya, T. Detchprohm, Hiroshi Amano, Isamu Akasaki

Proceedings Volume 3948, (2000) https://doi.org/10.1117/12.382129

KEYWORDS: Flame detectors, Gallium nitride, Ultraviolet radiation, Sensors, Luminescence, Diodes, Photoresistors, Solid state electronics, Electrodes, Semiconductors

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Proceedings Article | 24 May 1999 Paper

Carrier and exciton dynamics in In0.15Ga0.85N/GaN multiple quantum well structures

Bo Monemar, Peder Bergman, Galina Pozina, J. Dalfors, B. Sernelius, Per Holtz, Hiroshi Amano, Isamu Akasaki

Proceedings Volume 3624, (1999) https://doi.org/10.1117/12.349292

KEYWORDS: Quantum wells, Indium gallium nitride, Excitons, Doping, Electrons, Gallium nitride, Information operations, Temperature metrology, Picosecond phenomena, Luminescence

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Proceedings Article | 4 April 1997 Paper

GaInN/GaN multiple quantum wells green LEDs

Masayoshi Koike, N. Koide, S. Asami, J. Umezaki, Seiji Nagai, Shiro Yamasaki, Nobuyuki Shibata, Hiroshi Amano, Isamu Akasaki

Proceedings Volume 3002, (1997) https://doi.org/10.1117/12.271046

KEYWORDS: Green light emitting diodes, Blue light emitting diodes, Quantum wells, Light emitting diodes, Electroluminescence, Gallium nitride, Sapphire, Copper, Electronics engineering, Compound semiconductors

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Showing 5 of 43 publications

Proceedings Volume Editor (4)

SPIE Conference Volume | 12 October 2009

Photonics and Optoelectronics Meetings (POEM) 2009: Solar Cells, Solid State Lighting, and Information Display Technologies

SPIE Conference Volume | 28 April 2005

Physics and Simulation of Optoelectronic Devices XIII

SPIE Conference Volume | 18 June 2004

Physics and Simulation of Optoelectronic Devices XII

SPIE Conference Volume | 25 July 2003

Physics and Simulation of Optoelectronic Devices XI

Conference Committee Involvement (33)

Physics and Simulation of Optoelectronic Devices XXXIII

28 January 2025 | San Francisco, California, United States

Physics and Simulation of Optoelectronic Devices XXXII

30 January 2024 | San Francisco, California, United States

Physics and Simulation of Optoelectronic Devices XXXI

31 January 2023 | San Francisco, California, United States

Physics and Simulation of Optoelectronic Devices XXX

24 January 2022 | San Francisco, California, United States

Physics and Simulation of Optoelectronic Devices XXIX

6 March 2021 | Online Only, California, United States

Physics and Simulation of Optoelectronic Devices XXVIII

3 February 2020 | San Francisco, California, United States

Physics and Simulation of Optoelectronic Devices XXVII

5 February 2019 | San Francisco, California, United States

Physics and Simulation of Optoelectronic Devices XXVI

29 January 2018 | San Francisco, California, United States

Physics and Simulation of Optoelectronic Devices XXV

30 January 2017 | San Francisco, California, United States

Physics and Simulation of Optoelectronic Devices XXIV

15 February 2016 | San Francisco, California, United States

Gallium Nitride Materials and Devices X

9 February 2015 | San Francisco, California, United States

Physics and Simulation of Optoelectronic Devices XXIII

9 February 2015 | San Francisco, California, United States

Physics and Simulation of Optoelectronic Devices XXII

3 February 2014 | San Francisco, California, United States

Gallium Nitride Materials and Devices IX

3 February 2014 | San Francisco, California, United States

Gallium Nitride Materials and Devices VIII

4 February 2013 | San Francisco, California, United States

Physics and Simulation of Optoelectronic Devices XXI

4 February 2013 | San Francisco, California, United States

Gallium Nitride Materials and Devices VII

23 January 2012 | San Francisco, California, United States

Physics and Simulation of Optoelectronic Devices XX

23 January 2012 | San Francisco, California, United States

Physics and Simulation of Optoelectronic Devices XIX

24 January 2011 | San Francisco, California, United States

Gallium Nitride Materials and Devices VI

24 January 2011 | San Francisco, California, United States

Gallium Nitride Materials and Devices V

25 January 2010 | San Francisco, California, United States

Physics and Simulation of Optoelectronic Devices XVIII

25 January 2010 | San Francisco, California, United States

Solar Cells, Solid State Lighting and Information Display Technologies

8 August 2009 | Wuhan, China

Physics and Simulation of Optoelectronic Devices XVII

26 January 2009 | San Jose, California, United States

Gallium Nitride Materials and Devices IV

26 January 2009 | San Jose, California, United States

Physics and Simulation of Optoelectronic Devices XVI

21 January 2008 | San Jose, California, United States

Physics and Simulation of Optoelectronic Devices XV

22 January 2007 | San Jose, California, United States

Advanced LED for Solid-State Lighting (Special Symposium)

5 September 2006 | Gwangju, South Korea

GaN Materials and Devices

23 January 2006 | San Jose, California, United States

Physics and Simulation of Optoelectronic Devices XIV

22 January 2006 | San Jose, California, United States

Physics and Simulation of Optoelectronic Devices XIII

24 January 2005 | San Jose, California, United States

Physics and Simulation of Optoelectronic Devices XII

26 January 2004 | San Jose, CA, United States

Physics and Simulation of Optoelectronic Devices XI

27 January 2003 | San Jose, CA, United States

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