Terahertz quantum cascade laser sources with intra-cavity difference frequency generation are currently the only electrically-pumped monolithic semiconductor light sources operating at room temperature in the 1-6 THz spectral range. These devices demonstrated drastic improvements in performance in the past several years and can produce broadband and narrow-linewidth single-mode terahertz emission with power output sufficient for spectroscopic applications. Recent efforts in the wavefunction engineering using an active region design based on a dual-upper-state concept led to a significant enhancement of the optical nonlinearity of the active region for efficient terahertz generation. Dual-upper-state terahertz quantum cascade laser sources exhibit the power of >0.3 mW. Here, we report low frequency generation from terahertz quantum cascade laser sources based on intra-cavity nonlinear frequency mixing. In order to achieve higher nonlinear susceptibility in low frequency region, we design a long wavelength dual-upper-state active region in which transition dipole moments are increased. A fabricated device with distributed feedback grating demonstrates a THz peak output power of 40 μW at room temperature, with multi-mode THz emission at a frequency of 1.4 THz. Besides, a device produces THz output power of >250 μW at 110 K, which is higher output power, compared to low- frequency THz-QCLs at liquid helium temperature.
The beam propagation properties of the high-powered Multi-Quantum-Well (MQW) laser diode (LD) are definitive elements in many application fields such as micro-processing, biomedical technique, and basic research, etc. In this study, the beam characteristics of a high-powered InGaAs/AlGaAs MQW-LD have been evaluated in both fast-axis and slow-axis. The multi-planar waveguide model and the non-paraxial second-order moment theory were used in analyses of the beam propagation features in the direction perpendicular to the active layer of a MQW-LD. The experimental results of the beam character measurement accord with those of the theoretical calculation very well for a sampled InGaAs/AlGaAs MQW-LD. The analysis approach is thought to be useful for design of the LDs and the other waveguiding optical devices.
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