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Source Mask Optimization (SMO) techniques are now common on sub 20nm node critical reticle patterns These techniques create complex reticle patterns which often makes it difficult for inspection tool operators to identify the desired wafer pattern from the surrounding nonprinting patterns in advanced masks such as SMO, Inverse Lithography Technology (ILT), Negative Tone Development (NTD).
In this study, we have tested a system that generates aerial simulation images directly from the inspection tool images. The resulting defect dispositions from a program defect test mask along with numerous production mask defects have been compared to the dispositions attained from AIMS™ analysis. The results of our comparisons are presented, as well as the impact to mask shop productivity.
We reported capability of defect verification based on lithography simulation with a SEM system that architecture and software is excellent correlation for simple line and space.[1]
In this paper, we use a SEM system for the next generation combined with a lithography simulation tool for SMO-ILT, NTD and other complex pattern lithography. Furthermore we will use three dimension (3D) lithography simulation based on Multi Vision Metrology SEM system. Finally, we will confirm the performance of the 2D and 3D lithography simulation based on SEM system for a photomask verification.
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