The ellipsometry is known as high precision metrology for thin film thickness measurements and its optical properties by measuring ellipsometric parameters, ψ and Δ, defined as amplitude and phase values of the ratio of Fourier reflection coefficients for p- and s-polarized light. With conventional ellipsometers, we can get average values of ellipsometric parameters in the region of interest determined by spot size of measurement beam. However, we can expand the measurement scheme to two dimensional spectral imaging with additional imaging spectrograph compatible to the structure of ellipsometer. That is, we can simultaneously get spatial and spectroscopic ellipsometric parameters using two dimensional imaging detectors. Using this type of ellipsometers, polarization state dependent response of imaging spectrograph must be considered carefully during azimuth calibration procedures as well as ellipsometric parameters measurement. In this paper, we suggest Jones calculus model for ellipsometer with considering dichroic response in spectrograph and background signal levels in detector. And we show experimental calibration results comparison with that of simulation using suggested Jones calculus model.
We investigated the optical properties of titanium dioxide (TiO2) thin films which were deposited by ion beam assisted deposition (IAD) method on crystalline silicon and acrylic substrates. TiO2 thin films were grown by different growing conditions which are used the conditions of vacuum pressure, and deposition rate. The controlled vacuum pressure were 3 x 10-5Torr and 3 x 10-6 Torr, and the deposition rate was controlled to 0.35 nm/second, 0.20 nm/second, and 0.12 nm/second. Measurements of spectroscopic ellipsometry were performed in the spectral range between 0.76 eV and 8.7 eV with 0.02 eV steps and at the angle of incidence of 75°. We determined the complex refractive index and thickness of TiO2 thin films using the optical model which is included the Tauc-Lorentz dispersion equation and compared the relations between the optical properties and deposition rate or vacuum pressure variation. The optical band gaps of TiO2 thin films are around 3.42 eV.
The Spectroscopic Ellipsometry and the Time Resolved Microwave Conductivity (TRMC) are efficient tools for in-situ non invasive characterizations during the growth of semiconductors and interfaces. From ellipsometry, one estimates the optical absorption, structural composition of the material in the bulk and near the interface. The TRMC measures the transient microwave reflectivity induced by carriers photogenerated by a pulsed laser. From TRMC, one may estimate the mobility of the carriers in a thin film or in bulk materials, the carrier lifetime in the bulk or near the surface. Particularly, we characterize microcrystalline silicon: electron and hole mobility, electron mobility inside the grain, trapping. We also analyze the semiconductor/dielectric interface, particularly for c-Si/SiO2. Using various UV laser fluxes, we can characterize the surface recombination, estimate the interface field and compare with the density of states obtained from capacitance measurement. The results are compared with simulation.
The Spectroscopic Ellipsometry and the Time Resolved Microwave Conductivity (TRMC) are efficient tools for in-situ non invasive characterizations during the growth of semiconductors and interfaces. From ellipsometry, one estimates the optical absorption, structural composition of the material in the bulk and near the interface. The TRMC measures the transient microwave reflectivity induced by carriers photogenerated by a pulsed laser. From TRMC, one may estimate the mobility of the carriers in a thin film or in bulk materials, the carrier lifetime in the bulk or near the surface. Particularly, we characterize microcrystalline silicon : electron and hole mobility, electron mobility inside the grain, trapping.
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