Photonic integrated circuits provide a scalable platform for photonics-based quantum technologies. However, integrating quantum emitters and electro-optic cavities within this platform remains an open challenge proving to be a major hurdle from implementing key functionalities for quantum photonics, such as single photon sources and nonlinearities. Here, we address this shortcoming with the hybrid integration of InAs/InP quantum dot emitters on foundry silicon photonics and the implementation of photonic crystal cavities in thin-film lithium niobate. Co-integrated on-chip electronics allow us to tune the emission properties of the quantum dots while enabling GHz-rate coherent modulation over photons trapped in the cavities, thus providing a new level of programmability over interactions between optical fields and atom-like systems in integrated circuits. Our results open the door to a new generation of quantum information processors that can be manufactured in leading semiconductor foundries.
Large-scale quantum photonics requires the integration of several elements on the same chip, including quantum emitters and memories, active photonics, and single-photon detectors. In this talk, I will report on i) our recent work integrating superconducting nanowire single-photon detectors (SNSPD) with mechanically reconfigurable integrated photonics, and ii) our recently developed method for integration of SNSPDs onto arbitrary photonic substrates.
Thin Film Lithium Niobate (TFLN) photonic integrated circuits offer several improvements over other platforms in terms of material loss, energy efficiency, and operational bandwidth. We review our recent demonstration of quadrature phase shift keying in an ultrasmall TFLN photonic crystal-based IQ modulator. Our modulator features a footprint of 40 × 200 μm2 along with quality factors approaching 105 providing it with a Vπ = 1.16 V [H. Larocque et al. CLEO 2023, paper STh1R.3; H. Larocque et al. arXiv:2312.16746]. We discuss an extension to and optimization of quadrature amplitude modulation encoding schemes tailored to the device’s voltage response, including the use of a deep neural network for streamlining bit error rate minimization.
Color centers are promising candidates for quantum technologies due to their long coherence times and high-quality spin-photon interfaces. Silicon has recently emerged as a host for color centers operating in the telecommunication bands, in a technological platform featuring the world’s most advanced manufacturing, electronics, and photonics. In this talk, I will present our recent work on the fabrication and isolation of individual G-centers in silicon photonic waveguides, their spectral reconfiguration, and the enhancement of their light-matter interaction via coupling to photonic crystal cavities.
We demonstrated a large-scale space-time-multiplexed homodyne optical neural network (ONN) using arrays of high-speed (GHz) vertical-cavity surface-emitting lasers (VCSELs). Injection locking enables precise phase control over tens of VCSEL devices simultaneously, facilitating photoelectric-multiplication-based matrix operations and all-optical nonlinearity, operating at the quantum-noise limit. Our VCSEL transmitters exhibit ultra-high electro-optic conversion efficiency (Vπ=4 mV), allowing neural encoding at 5 attojoule/symbol. Three-dimensional neural connectivity allows parallel computing. The full-system energy efficiency reaches 7 fJ/operation, which is >100-fold better than the state-of-the-art digital microprocessors and other ONN demonstrations. Digit classification is achieved with an accuracy of 98% of the group truth.
High-speed SLMs are necessary for various classical and quantum applications, including massively parallel remote sensing, high-repetition-rate pulsed laser shaping, and scalable control of quantum objects at timescales faster than their decoherence time. Here, we demonstrate a high-speed SLM by two-dimensional electric field patterning of a lithium niobate thin film. A high-quality factor guided mode resonance enhances the amplitude and phase modulation from the induced index variation. Our approach offers fast (> GHz), low power, and high diffraction efficiency tuning.
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