Prof. Joan Ramón Morante Profile

Prof. Joan Ramón Morante

at IREC Barcelona

SPIE Involvement:

Author

Publications (17)

Proceedings Article | 13 March 2015 Paper

Surface modification, heterojunctions, and other structures: composing metal oxide nanocrystals for chemical sensors

Mauro Epifani, Elisabetta Comini, Raül Díaz, Aziz Genç, Jordi Arbiol, Teresa Andreu, Pietro Siciliano, Guido Faglia, Joan Morante

Proceedings Volume 9364, 936415 (2015) https://doi.org/10.1117/12.2078017

KEYWORDS: Oxides, Sensors, Nanocrystals, Metals, Heterojunctions, Catalysis, Chemical fiber sensors, Gases, Nanocomposites, Titanium dioxide

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Proceedings Article | 18 March 2013 Paper

Photochemical activity of TiO2 nanotubes

A. Pfuch, F. Güell, T. Toelke, S. Das, H. Messaoudi, E. McGlynn, W. Seeber, C. Fábrega, T. Andreu, J. Morante, R. Grunwald

Proceedings Volume 8626, 86260S (2013) https://doi.org/10.1117/12.2000554

KEYWORDS: Principal component analysis, Raman spectroscopy, Titanium, Scanning electron microscopy, Spectroscopy, Nanostructures, Crystals, Absorption, Photocatalysis, Titanium dioxide

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Proceedings Article | 17 May 2007 Paper

Micro and nanotechnologies for the development of an integrated chromatographic system

O. Casals, A. Romano-Rodríguez, X. Illa, C. Zamani, A. Vilà, J. R. Morante, I. Gràcia, P. Ivanov, N. Sabaté, L. Fonseca, J. Santander, E. Figueras, C. Cané

Proceedings Volume 6589, 65891A (2007) https://doi.org/10.1117/12.721924

KEYWORDS: Gas sensors, Sensors, Silicon, Glasses, Deep reactive ion etching, Gases, Semiconducting wafers, System integration, Chromium, Palladium

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Proceedings Article | 15 May 2007 Paper

Design and implementation of mechanical resonators for optimized inertial electromagnetic microgenerators

C. Serre, A. Pérez-Rodríguez, N. Fondevilla, E. Martincic, J. Morante, J. Montserrat, J. Esteve

Proceedings Volume 6589, 658905 (2007) https://doi.org/10.1117/12.722275

KEYWORDS: Resonators, Electromagnetism, Polymers, Prototyping, Resistance, Silicon, Manufacturing, Magnetism, Microsystems, Electromechanical design

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Proceedings Article | 15 May 2007 Paper

Nano and micro stripe based metal oxide thin film gas sensor

Stefan Palzer, Emmanuel Moretton, Francisco Hernandez Ramirez, Albert Romano-Rodriguez, Juan Ramon Morante, Jürgen Wöllenstein

Proceedings Volume 6589, 658912 (2007) https://doi.org/10.1117/12.721856

KEYWORDS: Sensors, Oxides, Metals, Gas sensors, Carbon monoxide, Temperature metrology, Oxygen, Electrodes, Gallium, Humidity

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Proceedings Article | 1 July 2005 Paper

3D deformation analysis of flow and gas sensors membranes for reliability assessment

Neus Sabate, Juergen Keller, Astrid Gollhardt, Dietmar Vogel, Isabel Gracia, Carles Cane, Joan Ramon Morante, Bernd Michel

Proceedings Volume 5836, (2005) https://doi.org/10.1117/12.608660

KEYWORDS: Sensors, Gas sensors, Reliability, Silicon, Platinum, 3D metrology, Temperature metrology, Digital image correlation, Atomic force microscopy, Scanning probe microscopy

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Proceedings Article | 28 June 2005 Paper

Nanostructured mesoporous tungsten oxide for gas sensor applications

Emma Rossinyol, Jordi Arbiol, Andreu Marsal, Francesca Peiro, Albert Cornet, Joan Ramon Morante, Leonid Solovyov, Bozhi Tian, Bo Tu, Dongyuan Zhao

Proceedings Volume 5838, (2005) https://doi.org/10.1117/12.608272

KEYWORDS: Oxides, Chromium, Sensors, Transmission electron microscopy, Crystals, Gas sensors, Silica, Particles, 3D modeling, Nanostructuring

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Proceedings Article | 9 May 2005 Paper

FIB based measurements for material characterization on MEMS structures

Dietmar Vogel, Daniel Lieske, Astrid Gollhardt, Juergen Keller, Neus Sabate, Joan Ramon Morante, Bernd Michel

Proceedings Volume 5766, (2005) https://doi.org/10.1117/12.599891

KEYWORDS: Digital image correlation, Ions, Scanning electron microscopy, Microelectromechanical systems, Ion beams, Material characterization, Image resolution, Sensors, Error analysis, Copper

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Proceedings Article | 24 April 2003 Paper

Compatibility of gas and flow sensor technology fabrication

Neus Sabate, Isabel Gracia, Carles Cane, Jordi Puigcorbe, Judith Cerda, Joan Ramon Morante, Javier Berganzo

Proceedings Volume 5116, (2003) https://doi.org/10.1117/12.498995

KEYWORDS: Sensors, Gas sensors, Silicon, Platinum, Resistors, Electrodes, Temperature sensors, Sensor technology, Dielectrics, Semiconductors

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Proceedings Article | 1 April 2003 Paper

Raman scattering and microstructural analysis of polycrystalline CuInS2 films for solar cell devices

Alejandro Perez-Rodriguez, J. Alvarez-Garcia, J. Marcos-Ruzafa, A. Romano-Rodriguez, Juan Morante, R. Scheer, J. Klaer, R. Klenk

Proceedings Volume 5024, (2003) https://doi.org/10.1117/12.497250

KEYWORDS: Copper, Copper indium disulfide, Raman spectroscopy, Sputter deposition, Transmission electron microscopy, Temperature metrology, Crystals, Raman scattering, Interfaces, Chemical analysis

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Proceedings Article | 19 April 2002 Paper

Low-cost thermal flow sensor for home-appliances applications

N. Sabate, Isabel Gracia, Carles Cane, J. Berganzo, J. Puicorbe, Juan Morante

Proceedings Volume 4755, (2002) https://doi.org/10.1117/12.462855

KEYWORDS: Sensors, Resistors, Spatial light modulators, Packaging, Silicon, Electronics, Calibration, Finite element methods, Wheatstone bridges, Gas sensors

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Proceedings Article | 5 April 2001 Paper

Thermal-induced stress in dielectric membranes suitable for micromechanized gas sensors

J. Puigcorbe, A. Vila, Isabel Gracia, Carles Cane, Juan Morante

Proceedings Volume 4408, (2001) https://doi.org/10.1117/12.425339

KEYWORDS: Gas sensors, Temperature metrology, Dielectrics, Finite element methods, 3D modeling, Sensors, Convection, Electronics engineering, Electrodes, Silicon

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Proceedings Article | 30 August 1999 Paper

Doping and structural properties for the phosphorous-doped polysilicon layers used for micromechanical applications

Florin Gaiseanu, Jaume Esteve, Carles Cane, Alejandro Perez-Rodriguez, Juan Morante, Christoph Serre

Proceedings Volume 3874, (1999) https://doi.org/10.1117/12.361246

KEYWORDS: Phosphorus, Diffusion, Doping, Chemical species, Interfaces, Annealing, Silicon, Heat treatments, Oxygen, Oxidation

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Our researches were devoted to the micromechanical elements fabricated by the surface micromachining technology, in order to reduce or to eliminate the internal stress or the stress gradients. We used an analysis based on secondary ion mass spectroscopy and the spreading resistance profiling determinations, correlated with cross-section electron transmission spectroscopy. The stress induced in the polysilicon layers by the technological processes depends on: (i) the conditions of the low pressure chemical vapor deposition process; (ii) the phosphorus doping technique; (iii) the subsequent multi-step annealing processes. In our experiments the LP-CVD conditions were maintained the same, but the condition specified previously as items (ii) was varied by using two different doping techniques: thermal- chemical doping consisting in prediffusion from a POCl₃ source in an open furnace tube; ionic implantation with an energy E equals 65KeV and a dose N equals 4.5 X 10¹⁵ cm^-2. The implantation process was followed by an annealing at 900 degrees C in an oxygen ambient for 30 minutes. The thermal budget was varied after the doping in order to reduce the stress gradient in the polysilicon layers. The results of our analysis allow us to show that: (1) the doping gradients are correlated with the slower phosphorus grains forme by an excess of the oxygen atoms; a concurrent process induced by the silicon self-interstitial injection during the diffusion and oxidation, determines the enhancement of the grain growth and therefore the enhancement of the electrical activation especially near the internal polysilicon interface; (2) the post-doping annealing conditions could be varied in a convenient manner, so that the doping induced stress gradients into the polysilicon layers to be reduced or completely eliminated for suitable micromechanical induced stress gradients into the polysilicon layers to be reduced or completely eliminated for suitable micromechanical applications. The results were used for the process optimization of micromechanical elements. The internal stress was determined by using anew, pull-in voltage method, allowing the comparison of the theory with the experimental data. It was deduced a new form of the equations set useful to extract the mechanical parameters like the internal stress and the Young's module. It was also deduced a simplified approximate formula useful to apply the least square fitting method for the extraction of the mechanical parameters. The results confirms the conclusions of the doping and the structural analysis.

Proceedings Article | 20 April 1998 Paper

Diagnostics of nitrogen-implanted diamond-like carbon films by optical and microhardness measurements

Victor Artamonov, Nickolai Klyui, B. Romanyuk, Mikhail Valakh, O. Vasylyk, Victor Semenovich, Alejandro Perez-Rodriguez, Juan Morante

Proceedings Volume 3359, (1998) https://doi.org/10.1117/12.306239

KEYWORDS: Nitrogen, Raman spectroscopy, Carbon, Ions, Ion beams, Ion implantation, Luminescence, Diagnostics, Optical testing, Crystals

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Proceedings Article | 20 April 1998 Paper

Optical characterization of carbon ion implantation into Si and SiGe alloys

Alejandro Perez-Rodriguez, A. Romano-Rodriguez, Christoph Serre, L. Calvo-Barrio, O. Gonzalez-Varona, Juan Morante

Proceedings Volume 3359, (1998) https://doi.org/10.1117/12.306237

KEYWORDS: Silicon carbide, Silicon, Carbon, Germanium, Crystals, Raman spectroscopy, Ion implantation, Ions, Transmission electron microscopy, Raman scattering

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