Various types of nano- and micro-structures, such as security holograms and diffractive optical elements, can be prepared directly into a photoresist using a direct-write optical lithography. Precise knowledge of photoresist properties, parameters of exposure, and photoresist development time are essential. We have characterized and optimised exposure of the positive binary sensitive photoresist ma-P 1200 series. Complex optical functions were obtained using Mueller matrix spectroscopic ellipsometry. True thickness profile of linearly exposed photoresist was studied by confocal microscopy and strong non-linearity was observed. In this paper we propose exposure correction to compensate this non-linearity.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.