We examined the potential of amorphous Ge-Bi-Se chalcogenide films prepared from RF magnetron co-sputtering.(Co)-sputtered films’ compositions were analysed using EDX spectroscopy. Pre-deposition calculations were used to find the expected composition, and a good agreement with experimentally determined compositions were observed. The amorphous to crystalline phase change in films were closely examined by XRD analysis and Raman spectroscopy in terms of atomic % of Ge by slowly increasing the GeSe2 contribution during co-sputtering. The influence of the composition on the optical band gap energy, refractive index and transmission spectra were also analysed using variable angle spectroscopic ellipsometry(VASE) and spectrophotometry analysis from visible to mid-IR. Third-order nonlinear optical parameters of the co-sputtered films were estimated using Sheik-Bahae formalism. The ridge waveguides were fabricated from RF magnetron co-sputtered Ge-Bi-Se films on Si/SiO2 substrate to obtain single-mode waveguides at 1.55 μm.
Financial support from Czech Science Foundation and European Union’s Horizon Europe Framework Programme under grant agreement No 101092723 is greatly acknowledged.
In the context of searching of new oxide materials for the application in the field of photonics sensors, this work is focused on the fabrication and characterization of tellurite thin films doped with erbium. For the deposition of amorphous TeO2-ZnO-(Bi2O3 or BaO or Na2O)-Er2O3 thin films with thickness around 700 nm, radio-frequency magnetron sputtering technique with Ar:O2 flow ratio = 40:10 sccm was exploited. The deposited films were characterized in detail via X-ray diffraction, atomic force microscopy, profilometry, transmission spectroscopy, variable angle spectroscopic ellipsometry, scanning eectron microscopy with energy-dispersive X-ray analysis and luminescence spectroscopy. The results are discussed in relation with the chemical composition of the fabricated thin films.
The financial support from the European Union’s Horizon Europe Framework Programme under grant agreement No 101092723 is greatly acknowledged.
In this work, the kinetics of photoinduced changes in sputtered ternary Ge29Sb8Se63 chalcogenide thin films with different thicknesses is studied. The optical bandgap energy of virgin thin films is 1.87±0.02 eV and the refractive index at 1 550 nm is 2.55±0.01 as determined by spectroscopic ellipsometry using Cody-Lorentz oscillator model. An annealing treatment caused bleaching of thin films resulting in optical bandgap energy increase to 1.96±0.02 eV accompanied with refractive index decrease down to 2.54±0.01. Subsequently, the photoinduced shift of the absorption edge was determined by the analysis of transmission data obtained by fibre-coupled high-resolution spectrometer. The irradiation of virgin thin films by near-bandgap light coming from continuous-wave diode-pumped solid-state laser leads to a fast photodarkening (PD) followed by slow photobleaching (PB) effect. The PB effect persists in virgin films and the maximum magnitude of this effect was found in film with the thickness of ~ 350 nm. Rise of the optical bandgap energy was ~ 0.04±0.02 eV using optical intensity of 125.0±5.0 mW ∙ cm−2. On the other hand, in annealed thin films, only PD occurs under the same conditions indicating that the PB component of the photoinduced change disappears when the film is annealed. Maximum decrease in optical bandgap energy due to the PD effect in annealed films was about ~ 0.05±0.02 eV found in film with the thickness of ~ 650 nm. An influence of the thickness and laser optical intensity onto the kinetics of photoinduced changes is discussed.
Phase change memory thin films from Ge-Sb-Te system with large (GeTe):(Sb2Te3) ratio have been deposited via UV pulsed laser deposition technique. The studied compositions were Ge6Sb2Te9, Ge8Sb2Te11, Ge10Sb2Te13, and Ge12Sb2Te15. Physico-chemical properties of the Ge-Sb-Te thin films, based on the scanning electron microscopy with energydispersive X-ray analysis, X-ray diffraction and reflectometry, atomic force microscopy, optical reflectivity, sheet resistance temperature dependences, and variable angle spectroscopic ellipsometry measurements, were studied in order to assess the effect of chemical composition of the deposited layers. All the obtained data confirm the importance of GeTe content in (GeTe)1-x(Sb2Te3)x thin films.
The unique properties of amorphous chalcogenides such as wide transparency in the infrared region, low phonon energy, photosensitivity and high linear and nonlinear refractive index, make them prospective materials for photonics devices. The important question is whether the chalcogenides are stable enough or how the photosensitivity could be exacerbated for demanded applications. Of this view, the Ge-Sb-Se system is undoubtedly an interesting glassy system given the antinomic behavior of germanium and antimony with respect to photosensitivity. The amorphous Ge-Sb-Se thin films were fabricated by a rf-magnetron co-sputtering technique employing the following cathodes: GeSe2, Sb2Se3 and Ge28Sb12Se60. Radio-frequency sputtering is widely used for film fabrication due to its relative simplicity, easy control, and often stoichiometric material transfer from target to substrate. The advantage of this technique is the ability to explore a wide range of chalcogenide film composition by means of adjusting the contribution of each target. This makes the technique considerably effective for the exploration of properties mentioned above. In the present work, the influence of the composition determined by energy-dispersive X-ray spectroscopy on the optical properties was studied. Optical bandgap energy Egopt was determined using variable angle spectroscopic ellipsometry. The morphology and topography of the selenide sputtered films was studied by scanning electron microscopy and atomic force microscopy. The films structure was determined using Raman scattering spectroscopy.
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