Here we investigated the role of oxygen sensitization temperature on physical properties of PbSe thin films. Polycrystalline thin films were deposited on quartz substrates using CBD method and sensitized at different treatment temperatures in an oxygen atmosphere. High temperature sensitization induces fusions/aggregations of individual PbSe grains and forms PbO and SeO2 phases in PbSe matrix. Carrier mobility sensitized at a high temperature increased by ~500 times, in comparison with the sample sensitized at a lower temperature. This mobility improvement could be attributed to the surface, dislocation and defect passivation effects via oxygen diffusing into PbSe and occupying Se vacancies.
We compared spectral response of a PbSe thin film photoconductor using FTIR with either a current or voltage preamplifier from 77K to 340K. The voltage preamplifier had a series load resistor; the current preamplifier did not. A photoconductor’s resistance changes with incident light, thus its measured response in terms of amps or volts per watt of incident light depends on the preamplifier circuit configuration. However, commercial descriptions of spectral response often only present data for a single circuit configuration. This leads to different “apparent” spectral response curves for different circuits with the same device. We investigated how accurately we could predict the response trend of a voltage preamplifier circuit or a current preamplifier circuit using dark resistance (Rdark) and light resistance (Rlight) measurements. We were able to predict the temperature at which maximum response occurs within ~25K, suggesting that this approach can be useful to predict the response of a PbSe photoconductor in various circuits with a limited set of measurements.
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