We report on the co-sputtering growth of amorphous silicon ruthenium (a-Si1-xRux) thin films, in which carrier sign reversal is observed by Hall measurement with increasing Ru concentration. High conductivity and suitable temperature coefficient of resistivity (TCR) are obtained, respectively. Raman spectroscopy reveals the degradation of amorphous network, which is caused by doped Ru atoms due to the different size and eletronegativity between Si and Ru atoms. The Hall effect anomaly will be related to the impurities and disordered structure.
The relationship between structure and electronic properties of n-type doped hydrogenated amorphous silicon (a-Si:H)
thin films was investigated. Samples with different features were prepared by plasma enhanced chemical vapor
deposition (PECVD) at various substrate temperatures. Raman spectroscopy and Fourier transform infrared (FTIR)
spectroscopy were used to evaluate the structural evolution, meanwhile, electronic-spin resonance (ESR) and optical
measurement were applied to explore the electronic properties of P-doped a-Si:H thin films. Results reveal that the
changes in materials structure affect directly the electronic properties and the doping efficiency of dopant.
Hydrogenated amorphous silicon-germanium (a-SiGe:H) alloy thin films were fabricated by conventional radio
frequency plasma enhanced chemical vapor deposition (RF-PECVD) with a gas mixture of silane (SiH4) and germane
(GeH4). The structural, optical and electrical properties of the films with different gas volume fraction of germane were
investigated by Raman and Fourier transform infrared (FTIR) spectroscopy, ultraviolet and visible (UV-vis) spectroscopy
and I-V curves, respectively. The amorphous network and structural disorder in the a-SiGe:H thin films were evaluated
by Raman spectroscopy. Meanwhile, the Si-H and Ge-H configurations of the films were investigated by FTIR
spectroscopy. From UV-vis spectroscopy and I-V curves, the optical and electrical properties of the testing films could be
deduced with varied germanium. It can be concluded that the structural and photoelectronic properties of a-SiGe:H thin
films can be influenced apparently by varing of GeH4/(SiH4+ GeH4) ratio in PECVD process.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.