Mr. Jimmy Hu Profile

Jimmy Hu

at Taiwan Semiconductor Manufacturing Co Ltd

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Author

Publications (8)

Proceedings Article | 23 March 2012 Paper

The role resist plays in EUVL extensibility

Shinn-Sheng Yu, Anthony Yen, Chih-T'sung Shih, Yen-Cheng Lu, Shu-Hao Chang, Jui-Ching Wu, Jimmy Hu, Timothy Wu

Proceedings Volume 8322, 83222A (2012) https://doi.org/10.1117/12.916024

KEYWORDS: Extreme ultraviolet lithography, Electroluminescence, Diffusion, Lithography, Extreme ultraviolet, Modulation transfer functions, Nanoimprint lithography, Performance modeling, Photomasks, Image resolution

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Proceedings Article | 8 April 2011 Paper

On the extensibility of extreme UV lithography

Shinn-Sheng Yu, Anthony Yen, Shu-Hao Chang, Chih-T'sung Shih, Yen-Cheng Lu, Jimmy Hu, Timothy Wu

Proceedings Volume 7969, 79693A (2011) https://doi.org/10.1117/12.881586

KEYWORDS: Extreme ultraviolet lithography, Photomasks, Electroluminescence, Extreme ultraviolet, Lithography, Phase shifts, Scanners, Optical lithography, Semiconducting wafers, Imaging systems

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Proceedings Article | 7 April 2011 Paper

Printability of buried mask defects in extreme UV lithography

Pei-Cheng Hsu, Ming-Jiun Yao, Wen-Chang Hsueh, Chia-Jen Chen, Shin-Chang Lee, Ching-Fang Yu, Luke Hsu, Sheng-Ji Chin, Jimmy Hu, Shu-Hao Chang, Chih-T'sung Shih, Yen-Cheng Lu, Timothy Wu, Shinn-Sheng Yu, Anthony Yen

Proceedings Volume 7969, 79691D (2011) https://doi.org/10.1117/12.881583

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Inspection, Etching, Extreme ultraviolet, Manufacturing, Deposition processes, Defect inspection, Chromium, Lithography

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Proceedings Article | 24 March 2009 Paper

A scatterometry based CD metrology solution for advanced nodes, including capability of handling birefringent layers with uniaxial anisotropy

Chih-Ming Ke, Jimmy Hu, Willie Wang, Jacky Huang, H. Chung, C. R. Liang, Victor Shih, H. H. Liu, H. J. Lee, John Lin, Y. Fan, Tony Yen, Noelle Wright, Ruben Alvarez Sanchez, Wim Coene, Marc Noot, Kiwi Yuan, Vivien Wang, Kaustuve Bhattacharyya, Karel van der Mast

Proceedings Volume 7272, 72723R (2009) https://doi.org/10.1117/12.814909

KEYWORDS: Anisotropy, Semiconducting wafers, Scatterometry, Finite element methods, Critical dimension metrology, Birefringence, Absorption, Refractive index, Carbon, Lithography

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Proceedings Article | 23 March 2009 Paper

Evaluation of a new metrology technique to support the needs of accuracy, precision, speed, and sophistication in near-future lithography

Chih-Ming Ke, Jimmy Hu, Willie Wang, Jacky Huang, H. Chung, C. Liang, Victor Shih, H. Liu, H. Lee, John Lin, Y. Fan, Kaustuve Bhattacharyya, Maurits van der Schaar, Noelle Wright, Kiwi Yuan, Vivien Wang, Cathy Wang, Spencer Lin, Mir Shahrjerdy, Andreas Fuchs, Karel van der Mast

Proceedings Volume 7272, 72720A (2009) https://doi.org/10.1117/12.814860

KEYWORDS: Overlay metrology, Metrology, Scatterometry, Semiconducting wafers, Critical dimension metrology, Lithography, Finite element methods, Photomasks, Scanners, Double patterning technology

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Proceedings Article | 23 March 2009 Paper

Chih-Ming Ke, Ching-Pin Kao, Yu-Hsi Wang, Jimmy Hu, Chen-Yu Chang, Ya-Jung Tsai, Anthony Yen, Burn Lin

Proceedings Volume 7272, 72720E (2009) https://doi.org/10.1117/12.814852

KEYWORDS: Overlay metrology, Scanners, Critical dimension metrology, Metrology, Semiconducting wafers, Calibration, Scatterometry, Wafer testing, Scanning electron microscopy, Mining

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Proceedings Article | 1 December 2008 Paper

A comprehensive look at a new metrology technique to support the needs of lithography performance in near future

Jimmy Hu, Chih-Ming Ke, Willie Wang, Jacky Huang, H. L. Chung, C. R. Liang, Victor Shih, H. Liu, H. J. Lee, L. G. Terng, Y. D. Fan, Maurits van der Schaar, Kiwi Yuan, Vivien Wang, Cathy Wang, Mir Shahrjerdy, Andreas Fuchs, Kaustuve Bhattacharyya, Karel van der Mast

Proceedings Volume 7140, 71400N (2008) https://doi.org/10.1117/12.807998

KEYWORDS: Overlay metrology, Metrology, Lithography, Semiconducting wafers, Scatterometry, Photomasks, Feedback control, Optical lithography, Scanners

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Proceedings Article | 22 March 2008 Paper

Sub-nanometer pitch calibration and data quality evaluation methodology

Chih-Ming Ke, Yu-hsi Wang, Jaffee Huang, Jimmy Hu, Jacky Huang, Tsai-Sheng Gau, Burn Lin

Proceedings Volume 6922, 69220I (2008) https://doi.org/10.1117/12.775410

KEYWORDS: Metrology, Critical dimension metrology, Scanning electron microscopy, Calibration, Semiconducting wafers, Process control, Silicon, Photomasks, Chemical species, Scatterometry

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Average CD of CD SEM and scatterometry CD (OCD) have been adopted for advanced CD control. The advantages and disadvantages of these two CD metrologies have been well discussed. The target of CD uniformity (CDU) for advanced technology has been driven to 1 nm, i.e. about three and half the size of a silicon atom, which is 0.29 nm. In the real production environment, engineers need to face sub-nanometer (< 1 nm) CD variations and do the necessary process corrections to meet the 1-nm CDU requirement. In other words, advanced CD process control has already been in the world of atomic scale. It turns out that methodology to ensure the accuracy of sub-nanometer CD has become essential for advanced CD control. In this paper, we introduced a methodology to produce 0.25, 0.5, and 1 nm programmed pitch offsets through mask design. These offsets are attainable with current process capability. Pitch offsets instead of line/space width offsets were used because the pitch is relatively process insensitive. The pitch has already been widely used as a CD SEM magnification calibration standard, e.g. Hitachi m-scale 240-nm pitch and VLSI 100-nm pitch standards. We produced large and small pitch splits to meet different magnification linearity requirements. We also used optical CD to verify the programmed pitch offset. Using the raw spectrum of OCD, systematic pitch signal changes in 0.25-nm steps can be detected, ensuring that 0.25-nm pitch offset standards are meaningful. Interestingly, 0.25 nm is smaller than the 0.29-nm Si atom. We also used this standard wafer to do the sampling size or data quality evaluation for different CD SEM measurement methodologies, e.g. 150K by 150K or 80K by 35K magnifications that in turn dictates the sample size. Pitch sensitivity is strongly related to the sampling size and line-edge roughness (LER). For example, 0.25-nm pitch sensitivity needs a larger sampling size than those of 0.5-nm and 1- nm pitch sensitivities. By means of this standard wafer, we can easily quantify metrology quality as well as choose the right metrology and sampling size for advanced process control.

Showing 5 of 8 publications

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