We report high-quality n-type extended short wavelength infrared (eSWIR) HgCdTe (cutoff wavelength ~2.59 μm at 77 K) layers grown on three-inch diameter CdTe/Si substrates by molecular beam epitaxy (MBE). This material is used to fabricate test diodes and arrays with a planar device architecture using arsenic implantation to achieve p-type doping. We use different variations of a test structure with a guarded design to compensate for the lateral leakage current of traditional test diodes. These test diodes with guarded arrays characterize the electrical performance of the active 640 × 512 format, 15 μm pitch detector array.
The detection of infrared radiation is of great importance for many defense and civilian applications. Eyesafe short-wavelength infrared (SWIR) spectral range is particularly interesting due to atmospheric propagation through obscurants. Applications include low-cost, long-range target identification, identification of heavily obscured targets, obstacle avoidance, and high resolution imaging from a variety of platforms including hand-held devices, unmanned air vehicles, or ground vehicles. HgCdTe grown on CdTe/Si by molecular beam epitaxy (MBE) was processed into mini-arrays for 1.55 μm LADAR applications. Low-capacitance photodiodes (<10 pF) were demonstrated at room temperature with frequency responses exceeding 100 MHz. This paper discusses the device architecture and device performance results.
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