The hydrogen terminated diamond schottky barrier diode was fabricated on single crystal diamond substrate that grown by using microwave plasma chemical vapor deposition system. Current-voltage characteristics of the device with radius of Schottky electrode of 70μm and the Schottky-Ohmic interspace of 10 μm was measured. The device shows good rectification properties. The current density is 5A/cm2 at the forward voltage of -4V, and a low reverse current is ~10-7 A/cm2 is obtained. The conduction mechanism of the device was analyzed, and the barrier height of Schottky contact was calculated to be 1.01eV. The direct current characteristics of the devices with different Schottky-Ohmic interspaces or Schottky areas are compared. In addition a high reverse breakdown voltage of 1200V has been achieved on the device with the interspace of 10μm, which suggests that the electric field reaches 1.2 MV/cm. This device has potential to be used in the fields of high power and high voltage application.
The negative capacitance (NC) Ge pFETs with different thicknesses of HfZrOx (HZO) are investigated. Although NC transistors with 6.6 nm HZO exhibit a 56 mV/decade subthreshold swing, the hysteresis inevitably occurs. The hysteresis-free characteristics are demonstrated in NC Ge pFETs with 4.5 and 3.7 nm HZO. We also study the impact of annealing temperature on the electrical performance of devices, which shows that the hysteresis reduces with the increasing of annealing temperature. By tuning the parameters of HZO, the NC devices achieve better SS and on-current in comparison with the control transistors.
We compare optical characteristics of black phosphorus photodetectors integrated with a stripe waveguide and a ridge waveguide by optical field intensity and absorption spectrum, which proves that the stripe waveguide is better for enhancing the optical absorption of black phosphorus photodetector. The strain effect on the band structure of black phosphorus is investigated using the first-principles method based on density functional theory (DFT). The band structure of 5-layer BP experiences a direct-indirect-direct transition and a semiconductor-metal transition (SMT) when applied different strains. As a result, the cut-off wavelength and the responsivity of this strained BP photodetector can reach 3.76μm and 0.48 A/W respectively. In a word, the waveguide-integrated black phosphorus photodetector under strain for mid-infrared range may promote potential novel optoelectronic device applications based on two-dimensional materials in the future.
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