Extreme ultraviolet (EUV) lithography systems have become one of the representative system nodes in the semiconductor industry. As EUV systems have been widely implemented to shrink integrated circuits, the importance of overlay control is increasing as much as patterning control. In terms of overlay control in lithography systems, a projection optics module is a key factor in determining the distortion of the overlay. In this paper, we present characteristics of EUV projection optics affecting overlay and propose a methodology predicting distortion of the overlay by calculating pattern shift using aberrations of EUV projection optics as an input. Also, the non-telecentricity of EUV systems is taken into account while calculating pattern shift as understanding the optical feature of EUV is required to explain the results of calculated distortion. Experimental results of dynamic random-access memory (DRAM) devices are presented to understand different behaviors between the projection optics structure of DUV and EUV scanners.
In this paper, we propose an unique metrology technique for the measurement of three-dimensional (3D) nanoscale structures of semiconductor devices, employing imaging-based massive Mueller-matrix spectroscopic ellipsometry (MMSE) with ultra-wide field of view (FOV) of 20×20 mm2. The proposed system enables rapid measurement of 10 million critical dimension (CD) values from all pixels in the image, while the conventional point-based metrology technique only measures a single CD value. We obtain Mueller matrix (MM) spectrum by manipulating wavelength and polarization states using a custom designed optical setup, and show that the proposed method characterizes complex 3D structures of the semiconductor device. We experimentally demonstrate CD measurement performance and consistency in the extremely large FOV, and suggest that the combination of MMSE and massive measurement capability can provide valuable insights: fingerprints originated from the manufacturing process, which are not easily obtained with conventional techniques.
In recent years, the overlay specifications of advanced semiconductor devices have become extremely stringent. This challenging situation becomes severe for every new generation of the device development. However, conventional overlay metrology systems have limited throughput due to their point-based nature. Here, we first demonstrate the novel imaging Mueller-matrix spectroscopic ellipsometry (MMSE) technique, which can measure the overlay error of all cell blocks on a device wafer with extremely high throughput, much faster than conventional point-based spectroscopic ellipsometry (SE) technologies. It provides the super large field of view (FOV) ~ 20 × 20 mm2 together with high sensitivity based on Mueller information, which will be truly innovated solution not only for the overlay metrology, but also for critical dimension (CD) measurement, eventually maximizing process control and productivity of advanced node.
An absolute alignment measurement of an underlayer and overlayer of overlay mark enables an innovative overlay control by which each layer’s grid errors can be independently corrected, versus of a conventional relative overlay measurement and control. We demonstrate an absolute alignment measurement of stacked overlay marks such as Diffraction-Based Overlay (DBO) by adopting a unique method incorporated in a standalone, image-based alignment metrology system. An alignment accuracy of each layer is evaluated using product wafers by comparing alignment measurement result to the reference data. In conclusion, we were able to achieve R2>0.97 coefficient.
The random error has been increased relative to the systematic error in overlay misalignment, as the Critical Dimension(CD) of semiconductor-design shrinks to under the 20 nm on DRAM and single-digit nanometer on Logic. The random error comprises diverse factors including non-lithography context, which caused by intricate process other than the scanner itself, hence it’s hard to control through conventional control methods using control knobs of scanner . In this study, we show that how effectively control and reduce on product overlay(OPO) error through making the most use of the conventional control knobs aided by machine learning. In addition to showing improved results, we address that conventional overlay feedback control with weighted moving average(WMA) can give rise to fluctuation of OPO error over entire wafer area, especially on the edge of wafer, due to the lack of control capability or flexibility. As a result, we show that 15.7% of OPO error can be trained and predicted for in-fab data and OPO has been improved from 2.29 nm to 2.08 nm or 9.2% on average over 5-steps of 1,201 lots with simulator.
To produce high-yielding wafers, overlay control in DRAM production needs to be exceptionally tight. The ASML YieldStar 375F introduces a continuous wavelength source and dual wavelength operation to deliver the high measurement accuracy and robustness required as input to the overlay control loop. At the same time, the high throughput required to allow high sampling densities is maintained. The YieldStar 375 was evaluated and adopted for Samsung’s D1y DRAM node.
KEYWORDS: Semiconducting wafers, Metrology, Reticles, Signal processing, Control systems, Lithography, Scanners, Process control, Scanning electron microscopy, Computer simulations
This paper introduces to improve inter-field CDU with on-product focus control by diffraction based focus (DBF) method. For DBF target selection, a robust focus metrology for focus control was obtained, and the selected DBF target was integrated on each seven spot of a product reticle. For on-product focus control, previously on-product focus monitoring was performed, and the monitored lots showed a stable focus fingerprint. Based on the result, Z and Z/ Rx/Ry corrections per field on wafers were applied. Focus uniformity of controlled wafers was improved up to 29% in comparison with non-corrected ones. To demonstrate the improvement of inter-field CDU, Full CDs on wafers were measured by SEM. As a result, inter-field CDU for controlled wafers was improved by 16% (3σ) compared with noncontrolled wafers.
As design rule shrinks down, on-product focus control became more important since available depth of focus (DOF) is getting narrower and also required critical dimension uniformity (CDU) becomes tighter. Thus monitoring, control the scanner focus error and reducing the focus control budget of scanner are essential for the production. There are some critical layers which has so narrow DOF margin that hardly be processed on old model scanners. Our study mainly focused on the analysis of the scanner focus control budget of such layers. Among the contributors to the focus budget, inter-field focus uniformity was turned out to be the most dominant. Leveling accuracy and intra-field focus uniformity were also dominant.
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