A monolithic CMOS image sensor based on the pinned photodiode (PPD) and optimized for X-ray imaging in the 300 eV to 5 keV energy range is described. Featuring 40 μm square pixels and 40 μm thick, high resistivity epitaxial silicon, the sensor is fully depleted by reverse substrate bias. Backside illumination (BSI) processing has been used to achieve high X-ray QE, and a dedicated pixel design has been developed for low image lag and high conversion gain. The sensor, called CIS221-X, is manufactured in a 180 nm CMOS process and has three different 512×128-pixel arrays on 40 μm pitch, as well as a 2048×512 array of 10 μm pixels. CIS221-X also features per-column 12-bit ADCs, digital readout via four highspeed LVDS outputs, and can be read out at 45 frames per second. CIS221-X achieves readout noise of 2.6 e- RMS and full width at half maximum (FWHM) at the Mn-Kα 5.9 keV characteristic X-ray line of 153 eV at -40 °C. This paper presents the characterization results of the first backside illuminated CIS221-X, including X-ray response and readout noise. The newly developed sensor and the technology underpinning it is intended for diverse applications, including Xray astronomy, synchrotron, and X-ray free electron laser light sources.
Electron multiplying charge-coupled devices (EMCCDs) are a variant of standard CCD technology capable of single-optical photon counting at MHz pixel readout rates. For photon counting, thermal dark signal and clock-induced charge (CIC) are the dominant source of noise and must be minimized to reduce the likelihood of coincident events. Thermal dark signal is reduced to low levels through cooling or operation in inverted mode (pinning). However, mitigation of CIC requires precise tuning of both parallel and serial clock waveforms. Here, we present a detailed study of CIC within Teledyne-e2v EMCCDs with a goal of better understanding the physical mechanisms that dominate CIC production in both noninverted and inverted mode operations (IMO). Measurements are presented as a function of parallel and serial clock timings, clock amplitudes, and device temperature. The effects of radiation damage and annealing are also discussed. A widely accepted view is that CIC is signal generated through impact ionization of energetic holes as the clock phase is driven high. While this explanation holds for IMO, we propose that the majority of CIC generated in noninverted mode is in fact due to a secondary effect of light emission from hot carriers. The information from this study is then used to optimize CIC on Teledyne e2v CCD201s operating at 1-MHz pixel rate in NIMO. For the CCD201, we obtained total CIC levels as low as 6.9 × 10 − 4 e − / pix / frame with ≥90 % detective quantum efficiency. We conclude with proposals to further reduce CIC based upon modifications to clocking schemes and device architecture.
Teledyne-e2v’s sensors and wafer-scale processing are widely used for high performance imaging across soft X-ray and optical bands. In the ultraviolet spectral range, the combination of short absorption lengths (below 10 nm) and high reflectance (up to 75 %) can strongly limit the quantum efficiency. Direct detection capability relies on back-illumination and back-thinning processes to be applied to a sensor to remove dead layers from the optical path. As the thinning process leaves an unacceptably thick backside potential well as well as a highly reflective surface, in-house ultraviolet-specific (e.g. for WUVS) or third-party processes (e.g. delta-doping for FIREBall) are required. We have calibrated Teledyne-e2v’s latest in-house wafer-scale proprietary processes with monochromatic synchrotron radiation over a wide spectral range in the ultraviolet domain (λ=40 nm – 400 nm) at the Metrology Light Source of the Physikalisch-Technische Bundesanstalt. The first process is a shallow p+ implantation that permits the thinning of the backside potential well. It is available in two different levels: basic and enhanced. The second type of enhancement is a specific anti-reflective coating to increase the back-surface transmittance for distinct spectral ranges. In this paper, we will present comparative quantum efficiency calibration of both passivation stages and of two different ultraviolet specific anti-reflective coatings (applied on enhanced passivation devices). Also, their stability after intense ultraviolet illumination will be shown. These measurements will permit Teledyne-e2v to extend the quantum efficiency data of their most recent processes across the soft X-ray to near-infrared spectrum.
THESEUS (Transient High Energy Sky & Early Universe Surveyor) is one of the three candidates for the M5 mission of the European Space Agency. The favoured mission will be announced in 2021 for an expected launch in 2032. THESEUS will be equipped with a Soft X-ray Imager (SXI) composed of a set of two telescopes using micro-pore optics offering an overall field of view of 0.5 sr (<2’ accuracy) for X-ray energies between 300 eV and 5 keV. The focal plane of each SXI telescope has a 16 x 16 cm2 cooled detector area. However, the limited radiator accommodation on the spacecraft prohibits the use of CCDs since cooling the focal planes to an optimal temperature for radiation hardness (<-100 ◦C) is not feasible. Therefore, the development of a suitable CMOS Image Sensor (CIS), capable of handling the expected levels of radiation at higher operating temperatures (approximately -30 ◦C) has been proposed. To demonstrate the performance required for the THESEUS SXI detector, a 2 x 2 cm2 prototype is under development using Open University pixel designs in a Teledyne-e2v digital CMOS platform. The pixel design will allow full depletion over silicon thickness of 35 µm for optimal soft X-ray quantum efficiency and instrument background suppression, and will be capable of near-Fano-limited spectral resolution that will also be of prime interest for synchrotron and Free Electron Lasers (FEL) applications. In this paper, we will present the design considerations and simulations leading to the implemented structures complying with THESEUS’ SXI requirements.
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