In this work, the selenization growth of Cu2ZnSn(SxSe1−x)4 (CZTSSe) films was optimized by two groups of experiments in vacuum chamber. The selenization of CZTSSe is strongly dependent on the Se supply in the vacuum chamber. Insufficient Se supply left the selenization incomplete. Higher Se supply to CZTSSe either by increasing the Se powder usage or by increasing the external pressure resulted in the degradation of CZTSSe films with lower degree of crystallinity.The characterization of XRD, Raman and SEM confirmed the films obtained under the best conditions were well-developed CZTSSe films with compact faceted grains and good crystallinity. Additionally, theCZTSSe film grown using 500°C showed more orientation along (220).
In design and manufacturing of power MOS microelectronic device, deep trench process is used for some special request. The trench depth reaches to scores of micrometer. some are often used in deep trench etching step. Wafer edge generates silicon grass defect. It becomes the major source of particle during the post wet clean steps, which impact line yield and contaminate wet etching tools. The paper introduces two solutions for solving this defect by optimizing trench-photo process. One is inverted trapezoid process and the other is negative resist process. Both solutions in lithography are aimed at wafer edge protection. The deep trench etching step is to protect the underground material from being damaged, and results to solve the wafer edge silicon grass defect of deep trench process.
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