Mr. Kazuhisa Ogawa Profile

Kazuhisa Ogawa

at Sony Atsugi Technology Ctr

SPIE Involvement:

Author

Publications (8)

Proceedings Article | 14 May 2007 Paper

New method to estimate systematic yield caused by lithography manufacturability

Hidetoshi Oishi, Mikio Oka, Kensuke Tsuchiya, Kazuhisa Ogawa, Hidetoshi Ohnuma

Proceedings Volume 6607, 660719 (2007) https://doi.org/10.1117/12.728957

KEYWORDS: Optical proximity correction, Metals, Design for manufacturing, Lithography, Manufacturing, Failure analysis, Yield improvement, Image processing, Error analysis, Photomasks

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Proceedings Article | 21 March 2007 Paper

OPC to reduce variability of transistor properties

Kaoru Koike, Kohichi Nakayama, Kazuhisa Ogawa, Hidetoshi Ohnuma

Proceedings Volume 6521, 65210J (2007) https://doi.org/10.1117/12.711812

KEYWORDS: Transistors, Optical proximity correction, Ions, Distortion, Process modeling, Lithography, Semiconducting wafers, Manufacturing, Semiconductors, Statistical analysis

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Proceedings Article | 20 May 2006 Paper

Optimization of layout design and OPC by using estimation of transistor properties

Kaoru Koike, Kohichi Nakayama, Kazuhisa Ogawa, Hidetoshi Ohnuma

Proceedings Volume 6283, 62830P (2006) https://doi.org/10.1117/12.681850

KEYWORDS: Transistors, Optical proximity correction, Ions, Distortion, Semiconducting wafers, Lithography, Design for manufacturability, Device simulation, Photomasks, Design for manufacturing

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Proceedings Article | 20 May 2006 Paper

Robust OPC technique using aerial image parameter

Mikio Oka, Shinichiro Suzuki, Kazuyoshi Kawahara, Kensuke Tsuchiya, Kazuhisa Ogawa, Hidetoshi Ohnuma

Proceedings Volume 6283, 628333 (2006) https://doi.org/10.1117/12.681821

KEYWORDS: Optical proximity correction, SRAF, Image processing, Lithography, Resolution enhancement technologies, Model-based design, Scanning electron microscopy, Photomasks, Printing, Semiconductors

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Proceedings Article | 28 June 2005 Paper

An extension method of metal layer layout in mask data preparation for robust processes

Kensuke Tsuchiya, Kazuhisa Ogawa, Satomi Nakamura, Kazuyoshi Kawahara, Hidetoshi Oishi, Hidetoshi Ohnuma

Proceedings Volume 5853, (2005) https://doi.org/10.1117/12.617135

KEYWORDS: Optical proximity correction, Photomasks, Metals, Printing, Semiconductors, SRAF, Lithography, Scanners, Design for manufacturing, Design for manufacturability

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Proceedings Article | 20 August 2004 Paper

Advanced mask pattern correction method of alternating PSM: improvement of line width uniformity in the shifter length direction

Masamichi Yoshida, Ken Ozawa, Kazuhisa Ogawa, Hidetoshi Ohnuma

Proceedings Volume 5446, (2004) https://doi.org/10.1117/12.557800

KEYWORDS: Optical proximity correction, Distortion, Image segmentation, Model-based design, Critical dimension metrology, Phase shifts, Photomasks, Semiconducting wafers, Resolution enhancement technologies, Wafer-level optics

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Proceedings Article | 28 May 2004 Paper

Lithography of choice for the 45 nm node: new medium, new wavelength, or new beam

Fumikatsu Uesawa, Mikio Katsumata, Kazuhisa Ogawa, Koichi Takeuchi, Shinji Omori, Masaki Yoshizawa, Hiroichi Kawahira

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.535104

KEYWORDS: Lithography, Photomasks, Semiconducting wafers, Charged-particle lithography, Lithographic illumination, Phase shifts, Optical lithography, Electroluminescence, Photoresist processing, Critical dimension metrology

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Proceedings Article | 5 September 2001 Paper

New mask data verification method after optical proximity effect correction

Kazuhisa Ogawa, Isao Ashida, Hiroichi Kawahira

Proceedings Volume 4409, (2001) https://doi.org/10.1117/12.438340

KEYWORDS: Optical proximity correction, Optical calibration, Photomasks, Data processing, Data corrections, Lithography, Data compression, Optical simulations, Semiconductors, Algorithm development

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Showing 5 of 8 publications

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