Tunable and ultra-narrow linewidth lasers that are fully integrated remain a missing component and challenge for the thin-film lithium niobate platform, while being useful for applications ranging from data communication to signal processing. Here, we present, for the first time, the demonstration of fully integrated, extended cavity diode lasers combining C-band semiconductor gain chips with TFLN using photonic wire bonding. By leveraging the scalability of photonic wirebonding the laser, with two intra-cavity RSOAs, produces a high on-chip output power of 35 mW and shows single frequency operation with more than 61 dB side mode suppression. By adjusting on-chip heaters the laser can be tuned over >40 nm across the entire gain bandwidth. Using delayed self-heterodyne detection an ultra-narrow, intrinsic linewidth of 1.4 kHz is measured.
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