The highly Be-doped InAs layer has been grown on semi-insulating GaAs (100) substrate by Molecular Beam Epitaxy. Very good quality of the layer has been attested by high resolution scanning electron microscope (HR-SEM), X-ray diffraction (XRD) and the Raman spectra. The parallel and perpendicular residual strain are determined to be – 1.17 × 10-3 , and 1.12 × 10-3 , respectively. Moreover, the absorbance (ABS) and photoluminescence (PL) spectra were collected in order to estimate the bandgap narrowing. The 10 meV bandgap shrinking for 1.7×1018 cm-3 acceptor concentration suggests necessity of reexamining the Jain et al model [Jain, S. C., et al. - JAP 68(7): 3747-3749] in the context of actual values of InAs valence-bands effective-masses.
The article presents comparison of two alternative method of Hall sample preparation–manual "square" shaped and the cloverleaf one made by full photolithography process. The influence of symmetry and contacts configuration on repeatability of 4-point resistance and Hall resistance versus magnetic field characteristics was a Hall sample quality criterion. The characterization was performed in ±15 T magnetic-field range at 80 K and 300 K, for undoped InAs epitaxial layer, deposited on the GaAs substrate using MBE. It was indicated that the sample made by photolithography had better usefulness for Hall characterization, showing broader magnetic field range by two orders of magnitude than the reference one.
The preliminary results of quantitative mobility spectrum analysis of highly iodine-doped Hg0,685Cd0,315Te and arsenicdoped Hg0,827Cd0,173Te for the 5 – 300 K temperature range have been presented. Electron mobilities for the samples made by metalorganic chemical vapor deposition technique have been compared with the available literature data.
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