Zinc oxide (ZnO) has a wide band-gap energy of 3.37 eV and a large exciton binding energy of 60 meV which is considerably larger than the thermal energy at room temperature (26 meV), and therefore, efficient exciton emission in ultraviolet (UV) region can be expected. Especially, ZnO micro/nanocrystals are quite attractive as building blocks for efficient UV opto-electronic devices. We have been investigating micro-cavity UV lasing from variously-shaped ZnO micro/nanocrystals, and micro-cavity lasing from ZnO nanowire and nanosheet have been confirmed, so far. Recently, we could fabricate ZnO micro/nanosphere crystals by a simple laser ablation method of ZnO sintered target in the air. In this study, we report UV micro-cavity lasing from an optically-pumped single ZnO micro/nanosphere crystal, for the first time. The spherical-micro-cavity lasing characteristics were investigated and discussed by comparisons with theoretical considerations in terms of quality factor and mode spacing of its lasing spectra with modal structures. From those considerations, it was found that the lasing mechanisms within a ZnO sphere crystal was attributed to whispering-gallery- mode (WGM) cavity lasing, and a ZnO sphere crystal had a good light confinement property due to the internal total reflections. Since the fabrication method is very simple and productive without any time-consuming crystal-growth process, ZnO micro/nanosphere crystals can be promising building blocks for UV opto-electronic devices such as a UV laser diode. In addition, since a ZnO micro/nanosphere can operate as an active WGM refractometric sensor for small molecules in UV region, high sensitivity enhanced by high quality factor, refractive index, and wavelength dispersion can be expected.
Zinc oxide (ZnO) has attracted considerable attension due to its wide applications in particular ultra violet light emitting diode (UV-LED). In addition, the one-dimensional ZnO crystals are quite attractive as building blocks for light emitting devices like laser and LED, because of their high crystallinity and light confinement properties. However, a method for the realization of the stable p-type ZnO has not been well established. In our study, we have investigated the effect of the nanosecond laser irradiation to the ZnO nanorods as an ultrafast melting and recrystallizing process for realization of the p-type ZnO. Fabrication of the p-n homo junction along ZnO nanorods has been demonstrated using phosphorus ion implantation and ns-laser annealing by a KrF excimer laser. Rectifying I-V characteristics attributed to p-n junction were observed from the measurement of electrical properties. In addition, the penetration depth of laser annealed layer was measured by observing cathode luminescence images. Then, it was turned out that high repetition rate laser annealing can anneal ZnO nanorods over the optical-absorption length. In this report, optical, structural, and electrical characteristics of the phosphorus ion-implanted ZnO nanorods annealed by the KrF excimer laser are discussed.
Zinc oxide (ZnO) nano-crystal is great interest for optoelectronic applications in particular ultraviolet (UV) region such as UV-LEDs, UV-lasers, etc. For the practical optoelectronic applications based on the ZnO nanocrystals, control of nanowire growth direction, shape, density, and position are essentially required. In our study, we introduced a ZnO buffer layer and interference laser irradiation to control the growth position of ZnO nanocrystals. In this presentation, structural and morphological characteristics of periodic ZnO nano-crystals synthesized by the nanoparticle-assisted pulsed laser deposition will be discussed.
We have succeeded in growing various ZnO nanocrystals, such as nanowires, nanorods, and nanowalls, by a
nanoparticle-assisted pulsed-laser deposition (NAPLD). In this study, low-density ZnO nanowires were synthesized by
introduction of a ZnO buffer layer. Low-density hexagonal cone-shape ZnO cores are formed on the buffer layer, and
vertically-aligned ZnO nanowires are grown on the cores. The density of the nanowires was clearly decreased with
increasing the thickness of the Buffer layer. The buffer layer can be used as one of the effective additives to control the
growth density of the ZnO nano-crystals synthesized by NAPLD.
We have investigated responses of PDMS, PMMA and acrylic block copolymers (BCP) to EUV light from laserproduced
plasma beyond ablation thresholds and micromachining. We generated wide band EUV light around
100 eV by irradiation of Ta targets with Nd:YAG laser light. In addition, narrow band EUV light at 11 and
13 nm were generated by irradiation of solid Xe and Sn targets, respectively, with pulsed CO2 laser light. The
generated EUV light was condensed onto samples, using an ellipsoidal mirror. The EUV light was incident
through windows of contact masks on the samples. We found that through-holes with a diameter of 1 μm can be
fabricated in PDMS sheets with thicknesses of 10 μm. PDMS sheets are ablated if they are irradiated with EUV
light beyond a threshold power density, while PDMS surfaces were modified by irradiation with the narrow band
EUV light at lower power densities. Effective ablation of PMMA sheets can be applied to a LIGA-like process
for fabricating micro-structures of metals using the practical apparatus. Furthermore, BCP sheets were ablated
to have micro-structures. Thus, we have developed a practical technique for microma chining of PMMA, PDMS
and BCP sheets in a micrometer scale.
Polydimethylsiloxane (PDMS) is fundamental materials in the field of biotechnology. Because of its biocompatibility,
microfabricated PDMS sheets are applied to micro-reactors and microchips for cell culture. Conventionally, the microstructures
were fabricated by means of cast or imprint using molds, however it is difficult to fabricate the structures at
high aspect ratios such as through-holes/vertical channels. The fabrication of the high-aspect structures would enable us
to stack sheets to realize 3D fluidic circuits. In order to achieve the micromachining, direct photo-ablation by short
wavelength light is promising. In the previous works, we investigated ablation of transparent materials such as silica
glass and poly(methyl methacrylate) induced by irradiation with laser plasma EUV light. We achieved smooth and fine
nanomachining. In this work, we applied our technique to PDMS micromachining. We condensed the EUV light onto
PDMS surfaces at high power density up to 108 W/cm2 using a Au coated ellipsoidal mirror. We found that PDMS sheet
was ablated at a rate up to 440 nm/shot. It should be emphasized that through hole with a diameter of 1 μm was
fabricated in a PDMS sheet with a thickness of 4 μm. Thus we demonstrated the micromachining of PDMS sheets using
laser plasma EUV light.
We have been succeeded in growing vertically aligned ZnO nanowires by a newly developed nanoparticle-assisted
pulsed-laser deposition (NAPLD) without any catalyst. In this study, layer structured ZnO nanowires, such as film-wire
layered structure and core/shell structure, were synthesized using multi-target changer system. In this paper, synthesis
and photoluminescence characteristic of the layer structured ZnO nanowires are described.
ZnO nanowires have attracted a great attention as building blocks for the optoelectronic devices. For the practical
optoelectronic applications based on the ZnO nanowires, a synthesis technique for layered structure has significant
advantage to fabricate a pn junction, a core/shell structure, and a multiple quantum well structure. We have been
succeeded in growing nanowires on the pre-deposited ZnO film and core/shell structure by a newly developed
nanoparticle-assisted pulsed-laser deposition (NAPLD) using multi-target changer. In this paper, recent progresses of
synthesis of layer-structured ZnO nanowires by the NAPLD are described.
The lasing characteristics and the alignment methods of ZnO nanocrystals were investigated for an application to
ultraviolet (UV) laser diode (LD). ZnO nanowires and nanosheets were synthesized on a silicon substrate by a CVD
method or nanoparticle assisted pulsed-laser deposition (NAPLD), and then those ZnO nanocrystals were examined by a
photoluminescence (PL) method with a third-harmonic Nd:YAG laser (355 nm, 5 ns). The observed emission spectra
showed the obvious lasing characteristics having mode structure and a threshold for lasing. The threshold power density
of a ZnO nanowire and a nanosheet were measured to be 100 kW/cm2 and 5 kW/cm2, respectively. Furthermore, the
threshold power was calculated to be 8.4 mW for a ZnO nanowire and 2.5 mW for a ZnO nanosheet. Then the oscillation
mechanisms were discussed on those ZnO nanocrystals. We also observed the laser-induced motion (LIM) of ZnO
nanocrystals when they were excited by ultraviolet laser beam.
ZnO nano-crystals have been paid a great attention as building blocks for the optoelectronic devices. We have been
succeeded in growing ZnO nanostructures, such as vertically-aligned ZnO nanowires and nanowalls, by a newly
developed nanoparticle-assisted pulsed-laser deposition (NAPLD) without using any catalyst. Depending on the growth
condition a film-wire heterostructured ZnO were synthesized on the c-plane sapphire substrates. The room temperature
photoluminescence spectrum of synthesized ZnO nanostructures exhibited a strong intrinsic UV emission and a week
defect-related visible emission.
In the development of extreme ultraviolet (EUV) light source at 13.5 nm for EUV lithography system by laser-produced
plasma (LPP), a Tin (Sn) micro-droplet target is considered as a one of the promising targets for debris mitigation. In
addition, double pulse irradiation scheme is regarded to be effective in order to improve the conversion efficiency to
EUV light in the use of the droplet target. In our study, the dynamics of debris from the Sn droplet target irradiated by
double pulses was investigated in order to establish the guideline for the optimum design of the mitigation system. The
kinetic behaviors of the Sn atoms and of the dense particles from Sn droplet target irradiated by double pulses from the
Nd:YAG laser and the CO2 laser were investigated by the laser-induced fluorescence imaging method and a high-speed
imaging, respectively. After the pre-pulse irradiation of the Nd:YAG laser, the Sn atoms were ejected in all direction
from the target with a speed of as fast as 20 km/s and the dense particle cloud expanded by a reaction force due to the
plasma expansion with a speed of approximately 500 m/s. The expanding target was subsequently irradiated by the main-pulse
of CO2 laser and the dense cloud was almost disappeared by main-pulse irradiation.
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