Donors in silicon is a potential scalable qubit platform for quantum technologies due the compatibility with existing microelectronic fabrication. Bismuth donors are particularly interesting due to their large nuclear spin and strong hyperfine coupling, manifesting as a 20-dimensional Hilbert space with a hyperfine splitting of 30.5 µeV which can be resolved without the application of a magnetic field. Fully scalable manufacturing of deterministically positioned donors can only be achieved through single ion implantation. Here we will present a review of our recent optical characterisation studies of implanted Bi donors which address the challenges of by the implantation route for the delivery of usable materials for quantum technologies.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.