As the development technology of 3D NAND advances, it becomes increasingly important to measure the mid and bottom profiles of High-Aspect Ratio(HAR) hole or line structures. To estimate the HAR structure profile, SEM is generally used to measure the bottom CD using a high acceleration voltage, but there are cases where the measured CD does not represent actual bottom CD of the structure. To solve this problem, we propose a method of inferring the actual depth at which the measured CD is located by examining the CD change according to the change in the accelerating voltage of the electron beam and the inclination of the incident beam. After inferring the CD measured from the actual hole and line structure, the method was validated on samples with geometrically known structures. It is expected that the method approached in this paper can be used for 3D microstructure measurement using SEM technology in the future.
In case the process margin of the device is large and the defect tendency in the wafer occurs randomly, process monitoring were possible using limited sampling measurement values. Previous 3D structure metrology equipment (CD-SEM, ellipsometry, etc.) are not able to measure the entire structure of the wafer due to the speed limit. If the measurement location does not include a weak point, an error occurs in predicting the wafer defect rate. In this study, we propose a new method that can extract weak points from color maps obtained by high-speed inspection tools that can measure the entire wafer. We were able to reduce the process error by about 20% by weak point monitoring.
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