Mr. Lech Z. Hasse Profile

Lech Z. Hasse

at Gdansk Univ of Technology

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Proceedings Article | 1 August 1992 Paper

Simulation of 1/f alpha noise of semiconductor devices

Lech Hasse

Proceedings Volume 1783, (1992) https://doi.org/10.1117/12.131007

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The 1/f^(alpha ) noise model of semiconductor devices as a result of the summation of many burst noise components with different characteristic frequencies f_oi as well as its physical interpretation for a p-n junction has been presented. The error of spectrum representation depends on the density of frequencies f_oi (per unit frequency) and the bandwidth depends on the number of components N. A change of exponent (alpha) has been achieved by the exponential distribution of frequencies f_oi. For random number generation, the power-residue generator has been applied. The computer program during initialization calculates the required number of components N, number of the time samples K, and duration of the simulation process for the assumed value of an error.

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