In this study, by designing high-speed transimpedance amplification circuit and developing photon counting program in the Labview platform, we investigate the variation curve of the area integral (essentially the charge) of the output waveform of Silicon photomultiplier (SiPM) versus the incident light flux (the number of photons irradiated to the surface of SiPM per unit of time). The maximum photon counting rate of 1.56 Gcps was obtained at 470 nm at room temperature. When the light intensity increases to a certain extent, due to the saturation of the SiPM, the photon counting rate did not increase with the increase of the light intensity anymore. In addition, by recording the incident photon number of the calibrated photodiode, we also plot the photon detection effieciency (PDE) curve versus the incident light wavelength under different light intensities. The PDE curves were in accordance with the ones in the datasheet of the SiPM when the light intensity is much smaller than the saturation light intensity for the SiPM.
Silicon photomultiplier (SiPM) is a kind of array solid state photodetector which uses avalanche multiplication mechanism to detect weak light. It has very high detection sensitivity and is an excellent solution to the problem of weak light detection. Due to the thin thickness of the doped layer with high concentration impurity atoms on the surface of the existing SiPMs with bulk resistor quenching mode, the voltage of G-APD at different positions is not uniform. To solve this problem, SiPM with surface metal mesh structure is proposed in this paper, and the process and device simulation are carried out by Silvaco simulation software. The structure can improve the photon number resolution of SiPM by filling metal mesh holes on the surface of SiPM high concentration ion doping layer, so that the two ends of the G-APD cells in different regions have consistent bias. The process simulation results show that the growing oxide layer before ion implantation will affect the breakdown voltage of SiPM, and the breakdown voltage will increase with the increase of oxide layer thickness. The device simulation results show that the mesh structure improves the uniformity of electric field distribution among adjacent G-APD cells. In addition, the incident light can form multiple reflections between the metal mesh structure and the packaging medium, and a part of the light in the non-photosensitive region will be refracted into the photosensitive region. The simulated light response results show that the peak photocurrent is increased by 5% at room temperature when the over-voltage is 2.5 V.
Multi-pixel photon counters (MPPCs) have attracted much attention in low-light detection, andhave been widely used in lidar, high-energy particle physics, nuclear physics, astrophysics, nuclear medicine imaging and spectroscopy. Accurate measuring of MPPC key parameters is the prerequisite for judging its performance level. In this paper, the measuring methods of key parameters of MPPCare studied comprehensively, and relatively simple measuring methods are proposed, mainly including the measuring methods of pulse waveform characteristics, Dark Counting Rate (DCR), Photon DetectionEfficiency (PDE), photon number-resolved spectrum, optical crosstalk probability, gain and reverse volt-ampere characteristics of MPPC. A test measuring system is built. The parameters of typical MPPC devices are measured experimentally. The test results are reasonable, and the measured values of various parameters are basically consistent with the nominal values in the MPPCdevice specification.
Silicon Photomultipliers (SiPM) has become more and more important in many fields. In practical applications, its surface needs to be covered with passivation protective layer and anti-reflection coating. The usual practice is to cover the protective layer on the anti-reflection coating. However, the upper protective layer will change the anti-reflection effect. We studied the effect of SiPM surface coverage protective material on its light response characteristics. The simulation result showed that when the surface of SiPM device has SiO2 anti-reflection coating and silicon resin protective layer, the reflection light can be reduced by 27% and the photocurrent can be increased by 20% in the visible and near-infrared wavelength range. When the wavelength of light is 905 nm and the thickness of silicon resin changes in the range of 100 ~ 300 microns, the surface light reflectivity of the device can be reduced from 33% of bare silicon to 5.8% ~ 8.9%. Finally, the transmission spectrum of the double-layer medium composed of a glass slide with a main component of a SiO2 slice and a silicon resin coating was tested. The experimental results showed that the light transmittance of the double-layer coating system in the visible region increased by about 20% after the addition of silicon resin. The experimental results are basically consistent with the simulation results. This shows that the SiPM surface protective coating layer can effectively reduce the reflected light on the surface of the device and further achieve the effect of anti-reflection.
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