Mr. Lior Shoval Profile

Lior Shoval

Electrical Engineer at Applied Materials Ltd

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Author

Publications (12)

Proceedings Article | 28 June 2013 Paper

Extending DUV mask inspection tool for inspecting 2xnm HP and beyond

Jihoon Na, Sang Hoon Han, Gisung Yoon, Dong Hoon Chung, Byung-Gook Kim, Chanuk Jeon, Dana Bernstein, Lior Shoval, Ido Dolev, Ofer Shopen, Ju Sang Lee, Chung ki Lyu, Seung Ryong Bae

Proceedings Volume 8701, 870115 (2013) https://doi.org/10.1117/12.2032774

KEYWORDS: Photomasks, Inspection, Printing, Deep ultraviolet, Signal to noise ratio, Defect detection, Semiconducting wafers, Optical inspection, Wafer-level optics, Geometrical optics

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Proceedings Article | 23 March 2012 Paper

Applicability of e-beam mask inspection to EUV mask production

Lior Shoval, Shmoolik Mangan, Ishai Schwarzband, Sergey Khristo, Vivek Balasubramanian, Shay Goldstein, Ran Brikman, Nir Shoshani

Proceedings Volume 8322, 832227 (2012) https://doi.org/10.1117/12.927634

KEYWORDS: Inspection, Photomasks, Extreme ultraviolet, Databases, Data modeling, Image processing, Prototyping, Solid modeling, Mathematical modeling, Semiconducting wafers

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Proceedings Article | 24 January 2012 Paper

Study of EUV mask e-beam inspection conditions for HVM

Shmoolik Mangan, C. C. Lin, Greg Hughes, Ran Brikman, Alex Goldenshtein, Vlad Kudriashov, Alon Litman, Lior Shoval, Ilan Englard

Proceedings Volume 8166, 816631 (2012) https://doi.org/10.1117/12.898854

KEYWORDS: Inspection, Reflectivity, Extreme ultraviolet, Photomasks, Scanning electron microscopy, Contamination, Scattering, Extreme ultraviolet lithography, Semiconducting wafers, Multilayers

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Proceedings Article | 24 January 2012 Paper

Study of EUV mask e-beam inspection conditions for HVM

Shmoolik Mangan, C. C. Lin, Greg Hughes, Ran Brikman, Alex Goldenshtein, Vladislav Kudriashov, Alon Litman, Lior Shoval, Ilan Englard

Proceedings Volume 8166, 816612 (2012) https://doi.org/10.1117/12.899067

KEYWORDS: Inspection, Reflectivity, Extreme ultraviolet, Photomasks, Scanning electron microscopy, Contamination, Scattering, Extreme ultraviolet lithography, Semiconducting wafers, Multilayers

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Proceedings Article | 29 November 2010 Paper

EUV mask defectivity study by existing DUV tools and new e-beam technology

Shmoolik Mangan, Rik Jonckheere, Dieter Van Den Heuvel, Moshe Rozentsvige, Vladislav Kudriashov, Ran Brikman, Lior Shoval, Gaetano Santoro, Ilan Englard

Proceedings Volume 7823, 78232A (2010) https://doi.org/10.1117/12.864351

KEYWORDS: Photomasks, Inspection, Semiconducting wafers, Wafer inspection, Defect detection, Extreme ultraviolet, Printing, Deep ultraviolet, Reticles, Bismuth

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Proceedings Article | 28 May 2010 Paper

Evaluation of novel EUV mask inspection technologies

Shmoolik Mangan, Aya Kantor, Nir Shoshani, Asaf Jaffe, Dror Kasimov, Vladislav Kudriashov, Ran Brikman, Lior Shoval, Anoop Sreenath

Proceedings Volume 7748, 774822 (2010) https://doi.org/10.1117/12.868140

KEYWORDS: Photomasks, Inspection, Extreme ultraviolet, Scanners, Extreme ultraviolet lithography, Defect detection, Resolution enhancement technologies, Semiconducting wafers, Deep ultraviolet, Wafer inspection

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Proceedings Article | 24 March 2009 Paper

Novel lithography approach using feed-forward mask-based wafer CDU correction increase fab productivity and yield

Shmoolik Mangan, Erik Byers, Dan Rost, Mike Garrett, Merri Carlson, Craig Hickman, Jo Finders, Paul Luehrmann, Robert Kazinczi, Ingrid Minnaert-Janssen, Frank Duray, Baukje Wisse, Nicole Schoumans, Liesbeth Reijnen, Thomas Theeuwes, Michael Ben-Yishai, Rachel Ren, Ryan Gibson, Lior Shoval, Yaron Cohen, Yair Elblinger, Ilan Englard

Proceedings Volume 7272, 72722B (2009) https://doi.org/10.1117/12.815415

KEYWORDS: Photomasks, Semiconducting wafers, Scanners, Lithography, Inspection, Critical dimension metrology, Yield improvement, Wafer-level optics, Metrology, Imaging systems

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The extension of ArF lithography through reduced k1, immersion and double patterning techniques makes lithography a difficult challenge. Currently, the concept of simple linear flow from design to functional photo-mask is being replaced by a more complex scheme of feedback and feed-forward loops which have become part of a complex computational lithography scheme. One such novel lithography concept, called "holistic lithography", was recently introduced by ASML, as a scheme that makes the lithography process a highly efficient solution for the scaled down geometries. This approach encourages efficient utilization of computational lithography and the use of feed-forward and feed-back critical dimension (CD) and overlay correction loops. As sub-nanometer feature dimensions are reached for 3x nodes, with k1 reaching the optics limitations, Mask error enhancement factor (MEEF) values grow fast, thus making mask uniformity fingerprint and degradation throughout its life time a significant factor in printed CDU on the wafer. Whereas the consensus is on the need for growing density of intra-field data, traditional critical dimension scanning electron microscope (CDSEM) Feed backward loops to the litho-cell become unsuitable due to the high density CD measurement requirements. Earlier publications proposed implementing the core of the holistic lithography concept by combining two technologies: Applied Material's IntenCD^TM and ASML DoseMapper . IntenCD metrology data is streamed in a feedforward fashion through DoseMapper and into the scanner, to create a dose compensation recipe which improves the overall CDU performance. It has been demonstrated that the IntenCD maps can be used to efficiently reduce intra-field printed CDU on printed wafers. In this paper we study the integration concept of IntenCD and DoseMapper in a production environment. We implement the feed-forward concept by feeding IntenCD inspection data into DoseMapper that is connected to ASML's TWSINCAN^TM XT:1900i scanner. We apply this concept on printed wafers and demonstrate significant reduction in intra-field CDU. This concept can effectively replace the feedback concept using send-ahead wafers and extensive CDSEM measurements. The result is a significant cost saving and fab productivity improvement. By routinely monitoring mask-based CDU, we propose that all photo-induced transmission degradation effects can be compensated through the same mechanism. The result would be longer intervals between cleans, improved mask lifetime, and better end of line device yield.

Proceedings Article | 24 March 2009 Paper

Aerial imaging for FABs: productivity and yield aspects

Ilan Englard, Yaron Cohen, Yair Elblinger, Shay Attal, Neil Berns, Lior Shoval, Michael Ben-Yishai, Shmoolik Mangan

Proceedings Volume 7272, 727228 (2009) https://doi.org/10.1117/12.815419

KEYWORDS: Photomasks, Semiconducting wafers, Lithography, Critical dimension metrology, Airborne remote sensing, Scanners, Metrology, Yield improvement, Time metrology, Control systems

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The economy of wafer fabs is changing faster for 3x geometry requirements and below. Mask set and exposure tool costs are almost certain to increase the overall cost per die requiring manufacturers to develop productivity and yield improvements to defray the lithography cell economic burden. Lithography cell cost effectiveness can be significantly improved by increasing mask availability while reducing the amount of mask sets needed during a product life cycle. Further efficiency can be gained from reducing send-ahead wafers and qualification cycle time, and elimination of inefficient metrology. Yield is the overriding die cost modulator and is significantly more sensitive to lithography as a result of masking steps required to fabricate the integrated circuit. Thus, for productivity to increase with minimal yield risk, the sample space of reticle induced source of variations should be large, with shortest measurement acquisition time possible. This paper presents the latest introduction of mask aerial imaging technology for the fab, Aera2^TM for Lithography with IntenC^TM, as an enabler for efficient lithography manufacturing. IntenCD is a high throughput, high density mask-based critical dimension (CD) mapping technology, with the potential for increasing productivity and yield in a wafer production environment. Connecting IntenCD to a feed forward advance process control (APC) reduces significantly the amount of traditional CD metrology required for robust wafer CD uniformity (CDU) correction and increases wafer CD uniformity. This in turn improves the lithography process window and yield and contributes to cost reduction and cycle time reduction of new reticles qualification. Advanced mask technology has introduced a new challenge. Exposure to 193nm wavelength stimulates haze growth on the mask and imposes a regular cleaning schedule. Cleaning eventually causes mask degradation. Haze growth impacts mask CD uniformity and induce global transmission fingerprint variations. Furthermore, aggressive cleaning may damage the delicate sub-resolution assist features. IntenCD based CDU fingerprint correction can optimize the regular mask cleaning schedule, extending clean intervals therefore extending the overall mask life span. This mask availability enhancement alone reduces the amount of mask sets required during the product life cycle and potentially leads to significant savings to the fab. This mask availability enhancement alone reduces the amount of mask sets required during the product life cycle and leads to significant savings to the fab. In this paper we present three case studies from a wafer production fab and a mask shop. The data presented demonstrates clear productivity and yield enhancements. The data presented is the outcome of a range of new applications which became possible by integrating the recently introduced Applied Materials Aera2^TM for Lithography aerial imaging inspection tool with the litho cluster.

Proceedings Article | 19 May 2008 Paper

Controlling phase induced CD non-uniformity effects of PSM photo-masks

Dan Rost, Michael Ben-Yishai, Lior Shoval, Christophe Couderc

Proceedings Volume 7028, 70281L (2008) https://doi.org/10.1117/12.793062

KEYWORDS: Photomasks, Critical dimension metrology, Semiconducting wafers, Inspection, Scanning electron microscopy, Reticles, Phase shifts, Airborne remote sensing, Etching, Metrology

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Proceedings Article | 19 May 2008 Paper

An IntenCD map of a reticle as a feed-forward input to DoseMapper

Michael Ben Yishai, Jo Finders, Robert Kazinczi, Arno Bleeker, Paul Luehrmann, Ingrid Janssen, Frank Duray, Lior Shoval, Christophe Couderc, Rich Piech, Noam Hillel, Ilan Englard

Proceedings Volume 7028, 70283H (2008) https://doi.org/10.1117/12.793124

KEYWORDS: Photomasks, Critical dimension metrology, Semiconducting wafers, Reticles, Scanners, Metrology, Lithography, Inspection, Double patterning technology, Process control

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Proceedings Article | 19 May 2008 Paper

IntenCD: an application for CD uniformity mapping of photomask and process control at maskshops

Heebom Kim, MyoungSoo Lee, Sukho Lee, Young-Su Sung, Byunggook Kim, Sang-Gyun Woo, HanKu Cho, Michael Ben Yishai, Lior Shoval, Christophe Couderc

Proceedings Volume 7028, 70281K (2008) https://doi.org/10.1117/12.793061

KEYWORDS: Photomasks, Critical dimension metrology, Inspection, Semiconducting wafers, Scanning electron microscopy, Process control, Airborne remote sensing, Lithography, Defect inspection, Imaging systems

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Proceedings Article | 19 May 2008 Paper

IntenCD: mask critical dimension variation mapping

Amir Sagiv, Netanel Polonsky, Oren Boiman, Lior Shoval, Michael Ben-Yishai, Shmoolik Mangan

Proceedings Volume 7028, 70282X (2008) https://doi.org/10.1117/12.793103

KEYWORDS: Critical dimension metrology, Photomasks, Inspection, Airborne remote sensing, Semiconducting wafers, Signal attenuation, Error analysis, Numerical simulations, Image acquisition, Polarization

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Showing 5 of 12 publications

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