Thin films such as silicon nitride (SiNx) films, amorphous silicon (α-Si) films are fundamental in most microelectromechanical systems (MEMS). The thin-film stress is, in particular, of great importance for obtaining expected or controlled physical performance in MEMS devices. However, unexpected failures, especially blister defects, often occur when post-processing, for example, rapid thermal processing (RTP), is applied to the device. Through the preliminary experiment, we find that there is a trade-off between stress control and blister avoidance, and the roughness of the as-grown thin film is a good indicator to show the relationship between the thin-film stress and blister defects. Also, the experiment result shows that there is a balance between film stress and blister defects.
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