The results of analysis of filling pulse parameters influence on the ICTS spectra recorded for Au/Pd/Ti-SiO2 – (n) GaAs
MIS structures have been presented. It was demonstrated that the amplitude and the width of filling pulse strongly
affects: the shape, the amplitude and the position of ICTS peaks. Furthermore it was found that the pulse amplitude of 1
V, in the case of investigated structures, corresponds to a small pulse and the width of filling pulse is not connected in
simple way with the pulse amplitude as follows from literature. It was shown that both the measurements at short and
long time of filling pulse reveal a complex structure of ICTS spectrum. It was also demonstrated that different time
constants of interface states are obtained when the measurements are not performed with a small pulse and when the
filling pulse time is not long enough to achieve a complete states filling.
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