In this paper, we presented the technology of erbium-doped SiOx:TiOy films with different concentrations of erbium (0, 2, 4,6 wt.%) were fabricated using the sol-gel method and dip-coating technique. Tetraethyl orthosilicate (Si(OC2H5)4; TEOS) and titania (IV) ethoxide (Ti(OC2H5)4; TET) were used as precursors of silica, and titania, respectively. Erbium(III) nitrate pentahydrate (Er(NO3)3·5H2O) were used as doping sources of Er ions. The influence of erbium concentration on the optical properties were analyzed using monochromatic elipsometry and UV-Vis spectrophotometry. Using the reflectance spectrophotometry method, optical homogeneity of erbium-doped SiOx:TiOy films were confirmed. The optical band gaps (Eg) were estimated from UV-Vis spectrophotometry. The results indicates to slight decrease in crystallite size of erbium-doped SiOx:TiOy films with increasing erbium concentration. Photoluminescence properties in visible region of erbium-doped SiOx:TiOy films have been demonstrated.
In this paper we analyze the possibilities of developing efficient and low-cost multichannel photonic sensor system using SiO2:TiO2 photonic integrated circuit (PIC) technology. We examine numerically the possibility of using optical ring resonator as a fundamental building block of the system. The most convenient ring resonator configuration is shown providing both relatively high sensitivity (125 nm/RIU) and relatively wide free spectral range (9.6 nm) large enough for serial connection of multiple rings. Our study is completed by the report of recent advances in fabrication technology obtained in our project.
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