Single-photon avalanche diode (SPAD) sensors are versatile candidates for applications in low-light imaging and scenarios where high temporal resolution is crucial, like quantum imaging, fluorescence lifetime imaging, and (direct) time-of-flight methods. We demonstrate the improvement in light sensitivity by a factor of 7× for LiDAR (Light Detection and Ranging) by molding application-specific filling factor enhancing microlenses directly onto backside-illuminated SPADs. An 8"- wafer-level process is presented utilizing a mask aligner device for selective UV-curing of highly transparent polymer lenslets only in areas where SPADs are located and rinse uncured material from areas being compatible with postprocessing steps like chip dicing and electrical bonding. In addition to the optical benefits of chip-integrated lenslets, advantages arise from less system integration efforts of separately realized microlenses, especially with respect to tolerance conditions.
In many applications, there is a great demand for reliable, small, and low-cost three-dimensional imaging systems. Promising systems for applications such as automotive applications as well as safe human robotic collaboration are light detection and ranging (lidar) systems based on the direct time-of-flight principle. Especially for covering a large field of view or long-range capabilities, the previously used polygon-scanners are replaced by microelectromechanical systems (MEMS)-scanners. A more recent development is to replace the typically used avalanche photodiodes with single-photon avalanche diodes (SPADs). The combination of both technologies into a MEMS-based SPAD lidar system promises a significant performance increase and cost reduction compared with other approaches. To distinguish between signal and background/noise photons, SPAD-based detectors have to form a histogram by accumulating multiple time-resolved measurements. In this article, a signal and data processing method is proposed, which considers the time-dependent scanning trajectory of the MEMS-scanner during the histogram formation. Based on known reconstruction processes used in stereo vision setups, an estimate for an accumulated time-resolved measurement is derived, which allows to classify it as signal or noise. In addition to the theoretical derivation of the signal and data processing, an implementation is experimentally verified in a proof-of-concept MEMS-based SPAD lidar system.
We have developed a 32x24 pixel sensor array based on single-photon avalanche diodes (SPADs). Beside conventional 2- dimensional imaging, this sensor allows for precise timing of single-photon arrival times which can be exploited in a variety of technical and scientific approaches like 3D image acquisition, quantum imaging and quantum random number generation. Thus, such a sensor is eligible for many fields of application such as autonomous driving, remote and non-lineof- sight sensing, safety, robotics and more recently random number generation for statistical applications or data encryption. The novel sensor contains CMOS integrated backside illuminated SPADs which are connected to an underlying read-out IC by wafer-to-wafer bonding. Their single-photon sensitivity (quantum efficiency QE=60 % @ 580 nm) and high-speed performance (readout frequency 𝑓 = 25 kHz, temporal resolution 𝑡TDC = 312.5 ps) make the sensor a promising choice for, e.g. quantum imaging with photon-pairs where a 2-dimensional spatial and temporal resolution are as crucial as a low noise level. SPADs also offer exciting opportunities for random number generation by using the randomness of photon generation paired with time-resolved detection and post-processing. Another potential application of the sensor is light detection and ranging for which we integrated the sensor into a demonstrator system for direct time-of-flight measurements. It is capable of coincidence detection using 4 SPADs in each pixel, which allows for background light suppression in outdoor situations. This combination of single-photon sensitivity, precise photon arrival timing and our recent developments in wafer-to-wafer bonding technology gives access to a new generation of optical sensors for a variety of applications.
A previous time-resolved optical study reported on a metastable hidden electronic state in 1T-TaS2, which is only accessible upon photoexcitation and created under non-equilibrium conditions [1]. The properties of such a state are distinct from those of any other state in the equilibrium phase diagram and it is possible to revert to the thermodynamic initial state either by illuminating with picosecond laser pulses or by applying other thermal erase procedures. In this work we show photoinduced switching to a metastable hidden state on the same material, and probe it by means of both static and time-resolved photoemission spectroscopy, thus having direct access to the electronic structure of the system. From our experimental findings and comparison with other studies, we conclude that we obtain partial switching, leading to a hidden state with persisting insulating nature but significant modifications in the electronic structure and CDW ordering.
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